Extension of the term for submission of the Declaration of Commercial Feasibility shall apply exclusively to the area previously retained for Discovery Assessment.
Extension of the. PLACING LONG STOP DATE FOR THE PLACING In view of the additional time required to satisfy the conditions precedent under the Placing Agreement, on 27 April 2016, parties to the Placing Agreement agreed and entered into a supplemental agreement to the Placing Agreement extending the time to satisfy the conditions precedent under the Placing Agreement to 30 June 2016 thereunder. Save for the extension of the Placing Long Stop Date, all the terms and conditions under the Placing Agreement remain the same.
Extension of the trap-generation region It is reasonable to assume that DC stresses carried out under different bias conditions can result in differently located trap-generation regions, as a consequence of the distinctive electric-field pattern applied to the device during stress. Since we observed qualitatively- different gm degradation effects after power-state and off-state stresses [see Figures 2.5 and 2.9], we were interested in assessing whether the extension of the trap-generation region has an impact on the gm curve. Figure 2.21 summarizes the results of this kind of analysis, showing simulated gm vs VGS curves at a VDS of 7 V for pre-stress conditions and different widths (LDAM) of the trap- generation region (see Figure 2.11). Acceptor traps were placed in the cap, in the barrier, as well as in the buffer. Trap volume densities and trap energies were the same as those assumed for the degradation scenario E. LDAM was varied from LGD/16 (corresponding to ≈84 nm) to LGD (=1.35 μm). As can be noted, increasing LDAM amplifies the gm drop at high VGS, without affecting appreciably the gm peak. Increasing LDAM actually increases the drain access resistance. The latter mostly impacts gm in the high-VGS range, where the resistance of the intrinsic channel is small and the voltage drop across the drain access region is large (the total drain-to-source voltage being fixed). Similar effects on the gm vs VGS curve are predicted by simulations, when the volume density of acceptor traps is increased for a given LDAM value. In any case, the gm peak is not appreciably affected by either LDAM or trap-density increase. Besides trap generation, ohmic-contact degradation can contribute to access-resistance increase and therefore to ID and gm degradation. pre-stress LDAM=LGD/16 LGD/8 LGD/4 LGD/2 LGD 0.3 gm (S/mm) 0.2 0.1 Gate-Source Voltage (V) Figure 2.21: Simulated transconductance (gm) vs gate-source-voltage curves at a drain- source voltage (VDS) of 7 V for the pre-stress conditions and different lengths (LDAM) of the trap-generation region. Acceptor traps are placed in the cap, in the barrier, as well in the buffer. The case for which LDAM=LGD corresponds to the degradation scenario E. A final remark about Figure 2.21 is that simulations do not reproduce the VT shift observed experimentally after power-state stress, see Figure 2.5. Stress-induced positive VT shifts were observed by other authors after on-state DC and RF stresses and were attributed to (i) thermally-induced modif...
Extension of the. “Settlement Process” Should Not Impede Issuance of a Notice of Alleged Violation or Undermine Requirements for Disclosure of Settlements In the April 19 Order,3 the Commission directed NERC to “modify section 5.4 to state that settlement negotiations may occur at any time until a notice of penalty is filed with the Commission or an applicable governmental authority.” Id. P 104. While encouraging settlement is a laudable goal, NERC’s implementation of the Commission’s directive may have unintended consequences. Specifically, NERC’s modification of Section 5.4 of the CMEP to state that settlement negotiations begin “prior to the issuance of a notice of alleged violation”
Extension of the deadlineindicated in Clause 16.9.4of the Contract for ordering part of the Verification Services
