FAIRCHILD FOUNDRY SERVICES AGREEMENT
CONFIDENTIAL PORTIONS OF THIS DOCUMENT HAVE BEEN DELETED AND FILED SEPARATELY
WITH THE SECURITIES AND EXCHANGE COMMISSION PURSUANT TO A REQUEST FOR
CONFIDENTIAL TREATMENT.
THIS FAIRCHILD FOUNDRY SERVICES AGREEMENT ("Agreement") is dated and
made effective this 11th day of March, 1997 (the "Effective Date") by and
between NATIONAL SEMICONDUCTOR CORPORATION, a Delaware corporation, having its
principal place of business at 0000 Xxxxxxxxxxxxx Xxxxx, Xxxxx Xxxxx, Xxxxxxxxxx
00000-0000 ("National") and XXXXXXXXX SEMICONDUCTOR CORPORATION, a Delaware
corporation, having its principal place of business at 000 Xxxxxxx Xxxxxx, Xxxxx
Xxxxxxxx, Xxxxx 00000 ("Fairchild"). National and/or Fairchild may be referred
to herein as a "Party" or the "Parties" as the case may require.
WITNESSETH:
WHEREAS, the Parties have entered into a certain Asset Purchase
Agreement (hereinafter referred to as the "Purchase Agreement") under which
Fairchild is acquiring certain of the assets of National's Logic, Memory and
Discrete Power and Signal Technologies Business Units as historically conducted
and accounted for (including Flash Memory, but excluding Public Networks,
Programmable Products and Mil/Aero Logic Products) (the "Business"); and
WHEREAS, pursuant to the transactions contemplated in the Purchase
Agreement, Fairchild is acquiring National's manufacturing facilities in South
Portland, Maine (excluding the eight-inch fab and related facilities); West
Jordan, Utah; and Penang, Malaysia, and Cebu, the Philippines; and
WHEREAS, after the closing of the transactions contemplated by the
Purchase Agreement Fairchild will own and operate the Facilities; and
WHEREAS, National, using proprietary processes, has been
manufacturing silicon wafers containing certain integrated circuits at the
Facilities; and
WHEREAS, National is conveying to Fairchild certain intellectual
property rights pursuant to the Technology Licensing and Transfer Agreement
between National and Fairchild, of even date herewith; and
WHEREAS, National and Fairchild desire to enter into an agreement
under which Fairchild will continue to provide certain manufacturing services to
National following the closing of the transactions contemplated by the Purchase
Agreement; and
WHEREAS, National and Fairchild recognize that the prices National
shall pay to Fairchild for silicon wafers manufactured pursuant to this
Agreement are determined based on the collateral transactions and ongoing
relationship between the Parties as expressed in the Purchase Agreement, Revenue
Side Letter between National and Fairchild of even date herewith (the "Revenue
Side Letter") and the other Operating Agreements (as defined in Paragraph 7.1);
and
WHEREAS, the execution and delivery of this Agreement is a condition
precedent to the closing of the transactions contemplated by the Purchase
Agreement.
NOW, THEREFORE, in furtherance of the foregoing premises and in
consideration of the mutual covenants and obligations hereinafter set forth, the
Parties hereto, intending to be legally bound hereby, do agree as follows:
1.0 DEFINITIONS
1.1 "Acceptance Criteria" shall mean the electrical parameter testing,
process control monitor ("PCM") and other inspections for each
Product and/or Process as set forth in Exhibit F hereto, all of
which are to be performed by Fairchild prior to shipment of Wafers
hereunder.
1.2 "Best Efforts" shall require that the obligated Party make a
diligent, reasonable and good faith effort to accomplish the
applicable objective. Such obligation, however, does not require
any material expenditure of funds or the incurrence of any
material liability on the part of the obligated Party, which
expenditure or liability is unreasonable in light of the related
objective, nor does it require that the obligated Party act in a
manner which would otherwise be contrary to prudent business
judgment or normal commercial practices in order to accomplish the
objective. The fact that the objective is not actually
accomplished is no indication that the obligated Party did not in
fact utilize its Best Efforts in attempting to accomplish the
objective.
1.3 "Confidential Information" shall have the meaning set forth in
Paragraph 16.1 below.
1.4 "Effective Date" shall mean the date first set forth above.
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1.5 "Equivalent Wafers" for wafers manufactured at the South Portland,
Maine six inch fab shall mean the actual number of wafers in a
given Process multiplied by the process complexity factor for that
Process, as set forth in Exhibit A hereto; and for wafers
manufactured in a four or five inch fab, Equivalent Wafers shall
mean the number of six inch equivalent wafers.
1.6 "Facilities" shall mean the existing wafer fabrication facilities
located at South Portland, Maine (excluding the eight inch
fabrication facility of which National is retaining ownership) and
West Jordan, Utah, transferred to Fairchild from National pursuant
to the Purchase Agreement.
1.7 "Fairchild" shall mean Xxxxxxxxx Semiconductor Corporation and its
Subsidiaries.
1.8 "Fairchild Assured Capacity" shall mean the capacity that
Fairchild agrees to supply National pursuant to Section 5 below.
1.9 "Masks" shall mean the masks and reticle sets, including the mask
holders and ASM pods, for the Products and Wafers used to
manufacture Products hereunder.
1.10 "National" shall mean National Semiconductor Corporation and its
Subsidiaries.
1.11 "Processes" shall mean those National proprietary wafer
manufacturing processes and associated unit processes to be used
in the fabrication of Wafers hereunder which are set forth in
Exhibit A hereto, as such processes shall be modified from time to
time as agreed in writing by the Parties.
1.12 "Products" shall mean National's integrated circuit products which
will be manufactured by Fairchild in wafer form for National
hereunder and which are identified by National's part numbers
listed in Exhibit B hereto, which exhibit may be amended from time
to time as the parties may agree.
1.13 "Quality and Reliability Criteria" shall mean National's
manufacturing process quality and reliability specifications, as
set forth in the revision of National Specification CP0008 which
is in effect as of the Effective Date, and which are to be
followed
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by Fairchild in manufacturing Wafers hereunder.
1.14 "Specifications" shall mean the technical specifications (such as
Mask ID, Process Flow and Sort/Test) as listed in Exhibit B for
each of the Products as provided in this Agreement.
1.15 "Subsidiary" shall mean any corporation, partnership, joint
venture or similar entity more than fifty (50%) owned or
controlled by a Party hereto, provided that any such entity shall
no longer be deemed a Subsidiary after such ownership or control
ceases to exist.
1.16 "Technology Licensing and Transfer Agreement" shall mean the
agreement of even date herewith between the Parties under which
National is licensing and transferring certain intellectual
property rights to Fairchild.
1.17 "Wafers" shall mean four-inch (4"), five-inch (5") and/or six-inch
(6") silicon wafers for any of the Products to be manufactured by
Fairchild hereunder.
1.18 "Wafer Module" shall mean the Xxxxxxxxx four-inch (4"), five-inch
(5"), and six-inch (6") wafer fabrication units in South Portland,
Maine and the six-inch (6") wafer fabrication unit in West Jordan,
Utah.
2.0 INTELLECTUAL PROPERTY/NON-COMPETE
2.1 The provisions of the Technology Licensing and Transfer Agreement
will govern all issues related to the respective intellectual
property rights of the Parties hereunder, to include but not be
limited to, use rights, ownership rights and indemnification
obligations.
2.2 All manufacturing of Wafers shall take place at the Facilities.
Fairchild shall not transfer any National-owned intellectual
property or technical information outside of the Facilities or to
any other site, other than as may be permitted under the
Technology Licensing and Transfer Agreement.
2.3 During the term of this Agreement, including all extensions hereto
and any subsequent ramp-down period provided under Paragraph 15.1,
Fairchild will not develop, manufacture (except for National
hereunder), market or sell any integrated circuit that has
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substantially the same specifications as any Product.
3.0 PROCESSES
3.1 Exhibit A lists the Processes which Fairchild shall use in
manufacturing Wafers hereunder for National. Exhibit A may be
amended from time to time by mutual agreement in writing of the
Parties, as new processes are developed and older Processes become
obsolete.
3.2 After qualification is successfully completed for any Product to
be manufactured under this Agreement, if Fairchild desires to make
material Process changes affecting form, fit or function,
Fairchild will notify National of the intended change in
accordance with Xxxxxxxxx'x process change procedures then in
effect. If the proposed changes are unacceptable to National,
National and Fairchild shall work together in efforts to resolve
the problem and qualify the changed Process for making Wafers. If
during the first thirty-nine (39) fiscal periods of this Agreement
the Parties are unable to resolve the problem, Fairchild shall
continue to run the unmodified Process to supply Wafers pursuant
to this Agreement. After the first 39 fiscal periods of this
Agreement, if the Parties are unable to resolve the problem,
Fairchild shall have the right to make such Process changes upon
the provision of ninety (90) days prior written notice to
National.
3.3 Should Fairchild elect to discontinue a Process, it must give
National written notice of no less than twenty-four (24) fiscal
periods prior to the date it intends to discontinue any Process in
the ABiC family and written notice of no less than twelve (12)
fiscal periods for any other Process, or its future amended form.
In no event, however may Fairchild discontinue any Process during
the first thirty-nine (39) fiscal periods of this Agreement unless
National agrees. Subsequent to Xxxxxxxxx'x notice of Process
discontinuance, Fairchild will make provisions with National for
Last Time Buys, and commit to ship all Wafers requested in such
Last Time Buys as the Parties may negotiate.
If Fairchild is unable to deliver Wafers due to a Process
discontinuance during any ramp down phase occurring after the
first 39 fiscal periods, then any ramp-down revenue obligations of
National associated
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with Wafers to be manufactured under that Process will be
discharged in full.
3.4 National shall have the right, in its sole discretion, to
establish an alternative source of manufacturing for any Process.
In support of any Process transfer required to establish such
alternate source, Fairchild shall make available to National
process characterization data, where such data exists at the time
of such request, and all applicable manufacturing specifications,
including run cards and complete unit process specifications for
the Processes. In further support of such transfer, National may
contract with Fairchild, at a cost to be negotiated, for up to
thirteen (13) man weeks of engineering services. If such services
are required away from the Facilities, National shall also pay
reasonable travel and per diem expenses for the Fairchild
engineers providing such services.
3.5 There are currently a number of Processes under development at the
Facilities. Attached as Exhibit C hereto is a listing of said
Processes, the timetable and milestones to completion for each and
the funding which National shall pay Fairchild for such
development services. Fairchild will utilize its Best Efforts to
complete all development work successfully in accordance with
Exhibit C. National may terminate such development services prior
to completion thereof only after three (3) months prior written
notice to Fairchild. The rights of the Parties to any intellectual
property resulting from such development work shall be governed by
the terms of the Technology Transfer and License Agreement.
4.0 EXISTING PRODUCTS; SET UP AND QUALIFICATION OF NEW PRODUCTS; MODIFICATION
OF EXISTING PRODUCTS
4.1 For each new Product that National proposes to have Fairchild
manufacture, National will provide to Fairchild in advance the
Specifications and design layout of the Product for review and
comment by Fairchild. The Parties will also agree on the
Acceptance Criteria, including electrical test parameters, and
Quality and Reliability Criteria for the prototype Wafers to be
manufactured for the new Product during the qualification process.
4.2 An initial data base for Mask generation or pattern generation, or
acceptable production Masks will be
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provided by National to Fairchild, per Fairchild specifications
for large die, at National's expense, for each new Product to be
fabricated for National. In the alternative, National may provide
Fairchild with prime die design data and Fairchild will provide
the frame and fracture services and procure the Mask set at
National's expense. After receipt of the initial data base, or
pattern generation tape, or master or sub-master Mask set,
additional and/or replacement Mask sets shall be the
responsibility and expense of Fairchild. All such data bases,
pattern generation tapes and Mask sets shall be the property of
National, regardless of whether they were initially supplied by
National or replaced by Fairchild.
4.3 As soon as practical following agreement on the items in Paragraph
4.1 above, and following receipt of a written purchase order from
National, Fairchild will begin manufacture of twelve (12)
prototype Wafers for such Product as is specified in the purchase
order. Fairchild will perform the electrical testing specified in
the initial Acceptance Criteria and supply the test data to
National with the prototype Wafers. Xxxxxxxxx'x obligation shall
be limited to providing Wafers that meet the applicable PCM
specifications and the associated test data. National will
promptly inspect the prototype Wafers and notify Fairchild in
writing of the results. If the prototype Wafers do not meet the
Acceptance Criteria and Quality and Reliability Criteria, the
Parties will cooperate in good faith to determine the reason for
such failure.
4.4 In connection with the completion of the qualification process for
any new Product, National will deliver to Fairchild final
Specifications for the Product incorporating any changes agreed in
writing by the Parties during the qualification process. The
Parties will also negotiate for each Product the final Acceptance
Criteria and Quality and Reliability Criteria to be used for the
commercial production lots of Wafers.
4.5 Unless otherwise agreed in writing, production quantities of
Wafers of a new Product will not be manufactured prior to
completion of the qualification process under this Section 4. In
the event that National desires for Fairchild to manufacture
production quantities, the Parties will agree in writing on the
terms before Fairchild accepts the purchase
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order.
4.6 If either National or Fairchild desires to make any changes to the
final Specifications, Acceptance Criteria or Quality and
Reliability Criteria for any existing Product, that Party shall
notify the other Party in writing and negotiate the changes in
good faith, including any changes in prices required by such
modifications. A modification to any of the foregoing will be
binding only when a writing to which such modification is attached
has been signed by both Parties as provided in this Agreement. The
Parties will separately negotiate the price and terms of any
prototype Wafers required in connection with such change.
4.7 Fairchild may at its discretion declare a Product obsolete if such
Product has not been run in production for a minimum of six (6)
fiscal periods. Fairchild must provide National with twelve (12)
months prior written notice of an obsolescence declaration and
make reasonable provisions with National for a Last Time Buy for
such Product. Within thirty (30) days after completing production
of National's Last Time Buy, Fairchild shall return all data bases
and Masks for such Product to National.
5.0 CAPACITY; VOLUME COMMITMENTS; PRODUCTION PLANNING
5.1 All planning herein will be done under National's accounting
calendar which currently divides its fiscal year into four (4)
equal fiscal quarters, each of which consists of three (3) fiscal
periods. The first two (2) periods of each quarter are of four (4)
weeks in duration and the third period is of five (5) weeks
duration.
5.2 Two (2) weeks prior to the end of each National fiscal period
National will provide in writing to Fairchild a baseline quantity
of Wafers, set forth in terms of Wafer starts per Wafer Module,
for the next eight (8) fiscal periods (the "Capacity Request").
For the South Portland, Maine facility the Capacity Request shall
clearly state each Wafer in terms of 6" Equivalent Wafers.
Equivalency factors are set forth in Exhibit A. For the West
Jordan, Utah facility the Capacity Request shall be stated in
terms of the Process required to manufacture the Wafers.
National's initial Capacity Request and Xxxxxxxxx'x
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Assured Capacity response formats are set forth in Exhibit D.
5.3 Each fiscal period National may change the Capacity Request in
accordance with the following table, provided that the maximum
Capacity Request for each Wafer Module does not exceed National's
share of each Wafer Module's installed equipment capacity as
provided herein. Any changes outside those permitted under the
following table must be by written agreement of the Parties.
Fiscal Periods in
the Capacity Request Permitted Changes
-------------------- -----------------
Period 1 Fixed
Period 2 +/-10%
Period 3 +/-15%
Period 4 +/-20%
Period 5 +/-25%
Period 6 +/-30%
Period 7 +/-35%
Period 8 +/-40%
5.4 National's share of a Wafer Module's installed equipment capacity
will equal the previous Fairchild Assured Capacity for that Wafer
Module, plus that percentage of any excess capacity available in
the Wafer Module equal to National's percentage of the currently
utilized capacity in said Wafer Module. Installed equipment
capacity by Wafer Module in South Portland, Maine is set forth
below:
Wafer Module Annual Capacity
------------ ---------------
FM Class 1 6" 133,000 Equivalent Wafer
starts
FM Class 100 4" 180,000 Wafer starts
(6" equivalent)
FM Class 100 5" 110,000 Wafer starts
(6" equivalent)
As no excess capacity exists in West Jordan, Utah, Xxxxxxxxx
hereby commits the following capacities to National for each
National fiscal year:
FY 1998 19,400 Wafer starts
FY 1999 7,000 Wafer starts
FY 2000 0 Wafer starts
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5.5 One (1) work week after receipt of the Capacity Request, Fairchild
shall provide National with a response to such Capacity Request,
the "Fairchild Assured Capacity". The Fairchild Assured Capacity
must guarantee the amount requested in National's latest Capacity
Request, provided that any changes to National's latest Capacity
Request are within the limits of Paragraph 5.3. Fairchild shall
utilize its Best Efforts to comply with any requests by National
for capacity above those which are permitted under Paragraph 5.3.
In any case, Fairchild shall be obligated hereunder to provide
National with the Wafer starts guaranteed in the Fairchild Assured
Capacity response. The initial Fairchild Assured Capacity response
will be the last one provided prior to the Effective Date. Set
forth below are two examples of the foregoing:
Example #1 The new Capacity Request is less than the last
Fairchild Assured Capacity response.
Period A B C D E F G H
------ - - - - - - - -
Last Capacity Request 100 100 100 100 100 100 100 100
Last Fairchild Assured Capacity 100 100 100 100 100 100 100 100
New Capacity Request 100 90 85 80 75 70 65 65
New Fairchild Assured Capacity 100 90 85 80 75 70 65 65
Example #2 The new Capacity Request is greater than
the last Fairchild Assured Capacity response.
Period A B C D E F G H
------ - - - - - - - -
Last Capacity Request 100 100 100 100 100 100 100 100
Last Fairchild Assured Capacity 100 100 100 100 100 100 100 100
New Capacity Request 100 110 115 120 125 130 135 135
New Fairchild Assured Capacity 100 110 115 120 125 130 135 135
5.6 The timetable for the rolling eight fiscal period Capacity
Request, the Fairchild Assured Capacity response, purchase order
release and detailed device level Wafer starts request for the
next fiscal period are set forth in Exhibit D hereto.
6.0 PURCHASE ORDERS
6.1 All purchases and sales between Fairchild and National shall be
initiated by National's issuance of written purchase orders sent
by either first class mail or facsimile. By written agreement of
the Parties, purchase orders may also be sent and
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acknowledged by electronic data exchange or other mutually
satisfactory system. Such "blanket" purchase orders shall be
issued once per fiscal quarter for Wafers to be delivered three
(3) fiscal periods in the future. They shall state the Wafer
quantities (specifying whether equivalents or actual) by Wafer
Module, and shipping and invoicing instructions. Fairchild shall
accept purchase orders through a written or electronic
acknowledgment. Within a reasonable time after receipt of
National's detailed device level Wafer starts request for the next
fiscal period, Fairchild shall provide National with a Product
delivery schedule either on a weekly basis as the Wafers are
started or for the Wafer starts for the entire fiscal period, as
the parties may agree in writing. The purchase orders may utilize
the first three (3) fiscal periods forecast in the eight period
rolling forecast supplied pursuant to Section 5, as the embodiment
of the purchase order for specifying the Wafer quantity by Wafer
Module and Process, and whether sorted or unsorted.
6.2 In the event of any conflict between the terms and conditions of
this Agreement and either Party's purchase order, acknowledgment,
or similar forms, priority shall be determined as follows:
(a) typewritten or handwritten terms on the face of a written
purchase order, acknowledgment or similar document or in the
main body of an electronic equivalent which have been
specifically accepted in writing by the other Party's
Program Manager;
(b) the terms of this Agreement;
(c) preprinted terms incorporated in the purchase order,
acknowledgment or similar document.
6.3 Consistent with standard practices of issuing specific device
level details of part numbers to be fabricated on a weekly or
periodic basis, National may unilaterally change the part number
to be manufactured, provided that Fairchild agrees that the change
does not negatively impact Xxxxxxxxx'x loadings and provided
further that there is no change in the Process flow to be used. A
change that will negatively impact loading or alter the Process
flow may only be directed upon Xxxxxxxxx'x written
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agreement, which shall utilize its Best Efforts to comply with
such requested change. The specific part number detail shall be
submitted by first class mail or facsimile. By written agreement
of the Parties, specific part number detail may also be sent by
electronic data exchange, or other mutually satisfactory system.
6.4 National shall request delivery dates which are consistent with
Xxxxxxxxx'x reasonable lead times for each Product as indicated at
the time National's purchase order is placed. Notwithstanding the
foregoing, Fairchild shall utilize its Best Efforts to accommodate
requests by National for quick turnarounds or "hot lots", which
includes prototype lots. Hot lot cycle times and the premiums to
be paid therefor are listed in Exhibit K.
6.5 Fairchild may manufacture lots of any size which satisfy the
requirements of effective manufacturing. However, National must
place orders for full flow and prototype Products in increments of
twelve (12) or twenty-four (24) Wafers. For personalized ASIC
Wafers drawn from mid-flow inventories, the smallest quantity that
shall be ordered by National is three (3) Wafers, except for
Wafers manufactured in the five-inch (5") fab, in which case the
smallest quantity that can be ordered is six (6) Wafers.
7.0 PRICES AND PAYMENT
7.1 The Parties hereby acknowledge that, as part of the collateral
transactions contemplated under the Purchase Agreement and ongoing
relationship between the Parties they have entered into the
Revenue Side Letter under which National has agreed to provide a
minimum revenue of [CONFIDENTIAL INFORMATION OMITTED AND FILED
SEPARATELY WITH THE SECURITIES AND EXCHANGE COMMISSION] periods
after the Effective Date. National shall discharge its obligations
under the Revenue Side Letter by purchasing goods and services
under this Agreement, a corresponding Fairchild Assembly Services
Agreement, and a Mil/Aero Wafer and Services Agreement of even
date herewith (collectively the "Operating Agreements"). Set forth
herein at Exhibit N is the forecasted volume of Wafers, by Wafer
Module and Process, that National will purchase from Fairchild
during the
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aforementioned thirty-nine fiscal periods (the "Forecast
Volumes"). The Forecast Volumes are for pricing purposes under
this Section 7 only and may vary in magnitude and mix in practice,
whereupon the prices applicable to the revised magnitude and mix
may also vary. The Forecast Volumes will be reviewed and updated
by the Parties every [CONFIDENTIAL INFORMATION OMITTED AND FILED
SEPARATELY WITH THE SECURITIES AND EXCHANGE COMMISSION] fiscal
periods and shall be consistent with the principles of
manufacturing set forth in Exhibit O.
7.2 Set forth in Exhibit N hereto are the prices which National shall
pay to Xxxxxxxxx for Wafers manufactured hereunder during the
first [CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH
THE SECURITIES AND EXCHANGE COMMISSION] fiscal periods of this
Agreement. The prices in Exhibit N for fiscal periods
[CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE COMMISSION] are for information purposes
only and are based on the Parties' best estimate of projected
volumes and costs. Set forth herein at Exhibit M is the forecast
capacity utilization and associated fixed costs of the Xxxxxxxxx
XX 6001 six-inch fab by both National and Xxxxxxxxx for the term
of this Agreement.
7.3 The prices which National shall pay to Xxxxxxxxx for Wafers
manufactured hereunder after the first [CONFIDENTIAL INFORMATION
OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND EXCHANGE
COMMISSION] periods of this Agreement shall be determined as set
forth herein in Exhibit L. The pricing methodology to be followed
hereunder will depend on the Wafer Module in which the Wafers are
being manufactured. In addition, Products that qualify will be
subject to a die cost adjustment as provided in Exhibit E.
7.4 For purposes of Exhibit L, National, or any "Big 6" accounting
firm designated by National, shall have reasonable rights to audit
not more than twice each fiscal year the books and records of
Xxxxxxxxx relevant to the pricing terms of this Agreement in order
to come to agreement with Xxxxxxxxx with regard to Xxxxxxxxx'x
actual manufacturing costs.
7.5 Prices are quoted and shall be paid in U.S. Dollars. Such prices
shall be on an FOB ship point basis. Payment terms are net thirty
(30) from date
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of invoice. Miscellaneous services may be invoiced separately.
7.6 National shall pay, in addition to the prices quoted or invoiced,
the amount of any freight, insurance, special handling and duties.
National shall also pay all sales, use, excise or other similar
tax applicable to the sale of goods or provision of services
covered by this Agreement, or National shall supply Xxxxxxxxx with
an appropriate tax exemption certificate.
7.7 National shall in no event be required to pay prices in excess of
those charged by Xxxxxxxxx for other third party foundry
customers, for substantially similar products sold on
substantially similar terms (e.g., volume, payment terms,
manufacturing criteria, contractual commitments vs. spot buys,
etc.). In the event Xxxxxxxxx desires to perform such foundry
services for other third party customers at such lower prices,
Xxxxxxxxx shall immediately notify National and National shall
begin receiving the benefit of such lower price at the same time
as such other third party customer. This Paragraph 7.7 shall not
apply to the prices to be paid by National hereunder for the first
twelve (12) fiscal periods of this Agreement, or if National fails
to honor its fixed commitments under Section 5 and to the extent
that such sales by Xxxxxxxxx to third party foundry customers are
only made in an attempt to make up for any underutilization of
capacity thereby caused by National.
8.0 OTHER MANUFACTURING SERVICES
8.1 At National's request, Xxxxxxxxx will perform Wafer sort and test
services based on sort and test programs prepared, owned and
otherwise proprietary to National. Towards that end, National
shall supply Xxxxxxxxx with National-owned specific probe cards,
load boards and test software in order that Xxxxxxxxx may provide
such services. Wafer sort shall be priced by hours of active
sorting, with specific prices as set forth in Exhibit G, and
specific sort times as set forth in Exhibit B.
8.2 At National's request, Xxxxxxxxx will perform separate epitaxial
deposition services for National for
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Wafers not otherwise manufactured by Xxxxxxxxx hereunder. The
general principles set forth in Sections 5 and 6 above shall apply
to such services, with epitaxial deposition services being treated
as a separate Wafer Module with its respective Capacity Request
and Xxxxxxxxx Assured Capacity, but the lead time for epitaxial
deposition shall be one (1) fiscal period. Prices shown in Exhibit
N for Wafer foundry services include epitaxial deposition where
appropriate. Otherwise, prices for such services are set forth in
Exhibit G.
8.3 At National's request, Xxxxxxxxx shall continue to provide certain
ongoing operational support services (the "Miscellaneous Support
Services") to National at the same level of support that was in
effect as of the Effective Date as listed in Exhibit J hereto
consisting of: (i) those services which will be provided to
National at no charge; and (ii) those services which will be
provided at the prices set forth in Exhibit J on a purchase order
basis. Operational support services not shown in Exhibit J will be
provided on a purchase order basis at prices to be negotiated by
the Parties case-by-case.
8.4 In support of the Processes and those manufacturing processes
listed in Exhibit C, Xxxxxxxxx will make available design support
information including the following items:
(a) Layout design rules.
(b) Industry standard models for active devices (BSIM3v3 for
CMOS devices and Xxxxxx-Xxxx with parasitics for bipolar
devices) representing nominal conditions and performance
corners.
(c) Industry standard models, as stated in the National NTPRS
document in effect as of the Effective Date, for parasitic
elements, such as interconnect resistances and capacitances,
sheet resistivities of all conducting layers, parasitic
capacitances for diffused areas, and so forth, including
additional elements or devices intended for mixed-signal
applications.
(d) Process cross sections, if not already available at
National.
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(e) Sufficient sizing and PCM information to assure the
integrity of Masks ordered in support of Products to be
manufactured.
(f) Yield models plus applicable current and forecast
parameters such as Ys and Do for those models.
This information should be in the form of at least one controlled
paper copy or electronic access to a controlled copy. National, at
its discretion, may request a controlled electronic copy of the
required information in lieu of the paper copy. Xxxxxxxxx will
provide the foregoing services at no charge to National, limited
to those engineering services performed as of the Effective Date.
Any additional requests are subject to fees set forth in Exhibit
J.
9.0 DELIVERY; RESCHEDULING AND CANCELLATION
9.1 Xxxxxxxxx shall make reasonable and diligent efforts to deliver
Wafers on the delivery dates specified in the Product delivery
schedule provided by Xxxxxxxxx pursuant to Paragraph 6.1. Any
shipment made within fifteen (15) days before or after the
shipment date(s) specified in said Product delivery schedule shall
constitute timely shipment. Partial shipments will be allowed and
may be invoiced separately. A delivery will be considered
conforming if it contains a quantity equal to plus or minus five
percent (5%) of the quantity ordered.
9.2 If Xxxxxxxxx has not made shipment of Products within fifteen (15)
days after the shipment date specified in the Product delivery
schedule provided by Xxxxxxxxx pursuant to Paragraph 6.1, National
shall have the right, subject to Paragraph 19.2, to cancel that
portion of its purchase order pertaining to such Products, but
only in the event that National's customer for those Products has
cancelled its order with National for such Products.
Notwithstanding the foregoing, if Xxxxxxxxx has not made shipment
of Products within thirty (30) days after the shipment date
specified in the Product delivery schedule, National shall have
the right, subject to Paragraph 19.2, in its
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sole discretion, to cancel that portion of its purchase order
pertaining to such Products, regardless of whether National's
customer has cancelled its order with National or not. In either
event, any obligation of National under its Capacity Request
and/or any commitment to Xxxxxxxxx under the Revenue Side Letter
associated with such cancelled purchase order shall be discharged
in full and National shall have no liability whatsoever to
Xxxxxxxxx therefore.
9.3 All Wafers delivered pursuant to the terms of this Agreement shall
be suitable, packed for shipment in Xxxxxxxxx'x standard
containers, marked for shipment to National's address set forth in
the applicable purchase order and delivered to a carrier or
forwarding agent chosen by National. Should National fail to
designate a carrier, forwarding agent or type of conveyance,
Xxxxxxxxx shall make such designation in conformance with its
standard shipping practices. Shipment will be F.O.B. shipping
point, at which time risk of loss and title shall pass to
National. Shipments will be subject to incoming inspection as set
forth in Paragraph 10.2 below.
9.4 To facilitate the inspection of Product deliveries to National,
lot integrity shall be maintained on all such deliveries, unless
specifically waived by mutual agreement of the Parties.
9.5 Subject to the provisions of Section 6, National may cancel any
purchase order upon at least one (1) week's notice prior to the
commencement of manufacturing without charge, provided that
National reimburses Xxxxxxxxx for the cost of any unique raw
materials purchased for such order.
9.6 National may request that Xxxxxxxxx stop production of Wafers in
process for National's convenience and Xxxxxxxxx shall consider
stopping depending on the point of process. In such event,
National shall pay for all Wafers at the agreed price, subject to
a negotiated adjustment based upon the degree of completion of the
Wafers and whether or not Xxxxxxxxx is able to utilize the
unfilled capacity. Xxxxxxxxx will, if reasonably practicable,
restart production of stopped Wafers one time within a reasonable
time after receipt of a written request from National, subject to
National's payment of any
-17-
additional expenses incurred. Sections 10, 11 and 12 of this
Agreement shall not apply to Wafers stopped under this Paragraph
9.6 for more than thirty (30) days, nor shall Xxxxxxxxx make any
commitments of yield with respect to such Wafers.
9.7 In the event that National elects to maintain an inventory of
partially finished Wafers, ownership of the partially finished
Wafers will pass to National when they reach the holding point
defined by the relevant Process flow. Xxxxxxxxx will invoice
National for such Wafers, but they will be stored under clean-room
conditions and remain in the Wafer processing WIP management
system. Xxxxxxxxx will inform National of the number and types of
these Wafers remaining in inventory at the end of each fiscal
period. Further, the electronic records and physical inventory
shall be available for inspection by National at any time.
Xxxxxxxxx shall credit National with the amount previously
invoiced for any such Wafers at such time as they are restarted in
the Process flow.
9.8 As of 12:01 A.M. on the Effective Date, National will own all
Wafers located at the Facilities which Xxxxxxxxx has commenced
processing but which have not yet been completed in accordance
with the pertinent Process flow. Unless expressly directed in
writing by National otherwise, Xxxxxxxxx shall continue to process
each Wafer to a normal state of completion in the applicable Wafer
Module. National shall pay Xxxxxxxxx for the accumulated
additional processing costs, plus a twenty-five percent (25%) xxxx
up, for the additional processing taking place on and after the
Effective Date. The provisions of Sections 10, 11 and 12 hereof
shall specifically apply to all such Wafers.
10.0 QUALITY CONTROL AND INSPECTION; AND RELIABILITY
10.1 Xxxxxxxxx will manufacture Wafers in accordance with the Quality
and Reliability Criteria for the applicable Product. Prior to
shipment, Xxxxxxxxx will perform the electrical parameter testing
and other inspections specified to be performed by it in the
applicable Acceptance Criteria on each Wafer lot manufactured.
Xxxxxxxxx will only ship those Wafer lots that successfully pass
the applicable Acceptance Criteria. Xxxxxxxxx will
-18-
electronically provide National with the electrical test data
specified in the applicable Acceptance Criteria. Wafers will be
laser scribed with lot and wafer number for statistical monitoring
and lot number traceability.
10.2 National shall promptly provide for inspection and testing of each
shipment of Wafers upon receipt in accordance with the Acceptance
Criteria and shall notify Xxxxxxxxx in writing of acceptance of
the Wafers. If National has not given written notice to Xxxxxxxxx
of rejection of all or part of a shipment within thirty (30) days
of receipt, National will be deemed to have accepted such Wafers.
In the event any lot or Wafer is found to fail the Acceptance
Criteria prior to final acceptance, National shall promptly return
it to Xxxxxxxxx, together with all test data and other information
reasonably required by Xxxxxxxxx. Upon confirmation by Xxxxxxxxx
that such Wafers fail the Acceptance Criteria, Xxxxxxxxx shall
replace such lot or Wafer on a timely basis.
10.3 National shall promptly provide for yield probe tests to be
conducted on the Wafers and communicate the results of the tests
to Xxxxxxxxx within thirty (30) days of receipt of Wafers from
Xxxxxxxxx. The right to return any Wafers for low yield shall be
governed by Section 11 below.
10.4 MPS-3-000 (Material Procurement Specification) - General
Provisions and Quality Requirements for External (Non-National)
Wafer Fab Facilities and MPS-3-001 (Material Procurement
Specification) - Technical Requirements for CMOS Processing are
the National policies for the purchase of integrated circuits from
independent suppliers. These policies as in effect at the
Effective Date shall provide criteria for the initial and
continuing qualification of the Facilities and evaluation of
Wafers manufactured by Xxxxxxxxx hereunder. To the extent that
those policies are not inconsistent with the provisions of this
Agreement, National shall not be required to accept delivery of
any Wafers hereunder if Xxxxxxxxx fails to comply with said
policies or such other similar policies as may be mutually agreed
to in writing by the Parties.
10.5 Xxxxxxxxx hereby warrants that the South Portland, Maine Facility
currently is, and will remain
-19-
throughout the term of this Agreement, ISO9000 certified.
Xxxxxxxxx further warrants that the West Jordan, Utah Facility
currently is, and will remain throughout the term of this
Agreement, ISO9000 and AEC-100 certified.
11.0 MINIMUM YIELD ASSURANCES
11.1 Xxxxxxxxx will guarantee a minimum yield assurance ("MYA") on a
per Product basis for those Wafers fabricated and probed by
Xxxxxxxxx. For Wafers not sorted by Xxxxxxxxx the MYA limits will
apply only to Wafers whose substandard yield is caused by
materials or Xxxxxxxxx'x workmanship. MYAs shall function as a
reliability screen hereunder for maverick Wafers, via standard
sort test results and yield.
11.2 The baseline yield and initial MYA for each Product to be
manufactured by Xxxxxxxxx hereunder is set forth in Exhibit B
hereto.
11.3 For a new Product, the baseline yield and MYA will be established
after a minimum of twenty (20) Wafer lot runs have been tested to
production released test programs. A new baseline yield and MYA
will be calculated whenever National makes any modifications to
said test programs.
11.4 For Products that qualify for die cost sharing, as provided in
Exhibit E, the baseline Net Die Per Wafer (NDPW) for the Product
will be used for defining the MYA. For all other Products, each
fiscal quarter, each Product's baseline yield will be calculated
using the previous fiscal quarter's results, or the previous
twenty (20) Wafer lot runs if less than twenty (20) Wafer lot runs
were processed in said previous quarter. The mean and standard
deviation (sigma) yield for a Product, will be calculated using
individual Wafer data. Zero yielding Wafers will be excluded from
such calculations. The results of such calculations will be used
in defining the MYA for that Product for the quarter in which the
calculations are made, but only if the mean yield changes by more
than +/- 2%.
11.5 MYA will be determined as follows. For purposes of Wafers
manufactured in South Portland, Maine,
-20-
Wafers which yield less than sixty (60%) percent of the mean will
be considered discrepant and may be returned for full credit at
National's discretion. For purposes of Wafers manufactured in West
Jordan, Utah, Wafers which yield less than mean minus six sigma,
as determined according to National Specification SS4908 in the
version extant as of the Effective Date, will be considered
discrepant and may be returned for full credit at National's
discretion. In no event shall Xxxxxxxxx accept returns of Wafers
on non-released products.
11.6 National shall provide yield analysis information on Wafers
returned to Xxxxxxxxx under this Section 11, in order to assist
Xxxxxxxxx in continuous Process improvement.
11.7 In the event of an extended period of substandard yields on a
Product, Xxxxxxxxx will utilize its Best Efforts to correct any
Process related causes and the Parties will negotiate in good
faith to make up for the Process related yield loss experienced by
National and its customers.
12.0 WARRANTY
12.1 Xxxxxxxxx warrants that the Wafers delivered hereunder shall meet
the Quality and Reliability Criteria and shall be free from
defects in material and Xxxxxxxxx'x workmanship under normal use
for a period of one (1) year from the date of delivery. If, during
the one year period:
(i) Xxxxxxxxx is notified in writing promptly upon discovery
with a detailed description of any such defect in any
Product (at which time Xxxxxxxxx shall issue a return
material authorization number to National), and;
(ii) National returns such Product to the applicable Facility
at National's expense for inspection; and
(iii) Xxxxxxxxx'x examination of such Product reveals that the
Product is indeed defective and does not meet the
applicable Quality and Reliability Criteria or is
defective in materials or Xxxxxxxxx'x workmanship and such
problems are not caused by accident,
-21-
abuse, misuse, neglect, improper storage, handling,
packaging or installation, repair, alteration or improper
testing or use by someone other than Xxxxxxxxx
then, within a reasonable time, Xxxxxxxxx, at its sole option,
shall either replace or credit National for such defective
Product. Xxxxxxxxx shall return any Products replaced under this
warranty to National, transportation prepaid, and shall reimburse
National for the transportation charges paid by National in
returning such defective Products to Xxxxxxxxx.
12.2 THE FOREGOING WARRANTY CONSTITUTES XXXXXXXXX'X EXCLUSIVE
LIABILITY, AND NATIONAL'S EXCLUSIVE REMEDY, FOR ANY BREACH OF
WARRANTY. EXCEPT AS SET FORTH HEREIN, XXXXXXXXX MAKES AND NATIONAL
RECEIVES NO WARRANTIES OR CONDITIONS ON THE PRODUCTS, EXPRESS,
IMPLIED, STATUTORY OR OTHERWISE, AND XXXXXXXXX SPECIFICALLY
DISCLAIMS ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A
PARTICULAR PURPOSE.
13.0 ON-SITE INSPECTION AND INFORMATION
13.1 Xxxxxxxxx shall allow National and/or National's customers to
visit and evaluate the Facilities during normal business hours as
part of established source inspection programs, it being
understood and agreed between National and Xxxxxxxxx that National
must obtain the concurrence of Xxxxxxxxx for the scheduling of all
such visits, which such concurrence shall not be unreasonably
withheld. It is anticipated that such visits will occur no more
than once per quarter on average.
13.2 Upon National's written request, Xxxxxxxxx will provide National
with process control information, to include but not be limited
to: process and electrical test yield results, current process
specifications and conformance to specifications; calibration
schedules and logs for equipment; environmental monitor
information for air, gases and DI water; documentation of operator
qualification and training; documentation of traceability through
Xxxxxxxxx'x operation; and Xxxxxxxxx verification information.
Except for exigent circumstances, such requests shall not be made
more than twice per year for a given category
-22-
of information.
14.0 PRODUCT ENGINEERING SUPPORT
14.1 The Parties will cooperate in allowing National employees to have
reasonable access to the Facilities during the term of this
Agreement (the "National Engineering Team"), in order to assist in
Product developments and improvements. Xxxxxxxxx will provide
reasonable office space to the National Engineering Team, if
required on a temporary basis not to exceed sixty (60) days per
occurrence, at no expense to National. Should the National
Engineering Team require long term, dedicated office space,
National agrees to pay Xxxxxxxxx the overhead cost associated with
such space. The National Engineering Team will comply with all
applicable Xxxxxxxxx regulations in force at the Facilities and
National hereby agrees to hold Xxxxxxxxx harmless for any damages
or liability caused by any member of the National Engineering
Team, which are attributable to: (i) the negligence or willful
malfeasance of such member, and (ii) any failure by such member to
comply with Xxxxxxxxx'x regulations in force at the Facilities or
with applicable law.
14.2 Xxxxxxxxx shall assist the efforts of the National Engineering
Team and provide National with reasonable and timely support.
14.3 Xxxxxxxxx shall assist National in any efforts to identify any
reliability problems that may arise in a Product. National shall
correct Product related problems and Xxxxxxxxx shall correct all
Process related problems.
15.0 TERM AND TERMINATION
15.1 The term of this Agreement shall be thirty-nine (39) fiscal
periods from the Effective Date; provided, however, that the
Parties shall not less than eight (8) fiscal periods prior to the
end of such thirty-ninth (39th) fiscal period determine in good
faith either an extension to this Agreement or a ramp-down
schedule of production so as to minimize disruption to both
Parties. If the Parties are unable to agree on the terms governing
a ramp-down, National shall be allowed to reduce
-23-
its purchase commitment by not more than twenty percent (20%) per
fiscal quarter, starting one fiscal quarter after the initial
thirty-nine (39) fiscal period term of this Agreement. National
will provide Xxxxxxxxx with not less than ninety (90) days prior
written notice of any such reduction.
15.2 This Agreement may be terminated, in whole or in part, by one
Party sending a written notice to the other Party of the
termination of this Agreement, which notice specifies the reason
for the termination, upon the happening of any one or more of the
following events:
(a) the other Party is the subject of a petition filed in a
bankruptcy court of competent jurisdiction, whether
voluntary or involuntary, which petition in the event of an
involuntary petition is not dismissed within sixty (60)
days; if a receiver or trustee is appointed for all or a
substantial portion of the assets of the other Party; or if
the other Party makes an assignment for the benefit of its
creditors; or
(b) the other Party fails to perform substantially any material
covenant or obligation, or breaches any material
representation or warranty provided for herein; provided,
however, that no right of termination shall arise hereunder
until sixty (60) days after receipt of written notice by the
Party who has failed to perform from the other Party,
specifying the failure of performance, and said failure
having not been remedied or cured during said sixty (60) day
period.
15.3 Upon termination of this Agreement, all rights granted hereunder
shall immediately terminate and each Party shall return to the
other Party any property belonging to the other Party which is in
its possession, except that Xxxxxxxxx may continue to retain and
use any rights or property belonging to National solely for the
period necessary for it to finish manufacturing the currently
forecasted Xxxxxxxxx Assured Capacity and/or complete any
production ramp-down activity. Nothing in this Section 15 is
intended to relieve either Party of any liability for any payment
or other obligations
-24-
existing at the time of termination.
15.4 The provisions of Sections 2, 12, 16, 17 and Paragraphs 19.5 and
19.8 shall survive the termination of this Agreement for any
reason.
16.0 EXPORT CONTROL
16.1 The Parties acknowledge that each must comply with all rules and
laws of the United States government relating to restrictions on
export. Each Party agrees to use its Best Efforts to obtain any
export licenses, letters of assurance or other documents necessary
with respect to this Agreement.
16.2 Each Party agrees to comply fully with United States export laws
and regulations, assuring the other Party that, unless prior
authorization is obtained from the competent United States
government agency, the receiving Party does not intend and shall
not knowingly export or re-export, directly or indirectly, any
Wafers, Products, technology or technical information received
hereunder, that would be in contravention of any laws and
regulations published by any United States government agency.
17.0 CONFIDENTIALITY
17.1 For purposes of this Agreement, "Confidential Information" shall
mean all proprietary information, including National and/or
Xxxxxxxxx trade secrets relating to the subject matter of this
Agreement disclosed by one of the Parties to the other Party in
written and/or graphic form and originally designated in writing
by the disclosing Party as Confidential Information or by words of
similar import, or, if disclosed orally, summarized and confirmed
in writing by the disclosing Party within thirty (30) days after
said oral disclosure, that the orally disclosed information is
Confidential Information.
17.2 Except as may otherwise be provided in the Technology Licensing
and Transfer Agreement, each Party agrees that it will not use in
any way for its own account, or for the account of any third
party, nor disclose to any third party except pursuant to this
-25-
Agreement, any Confidential Information revealed to it by the
other Party. Each Party shall take every reasonable precaution to
protect the confidentiality of said information. Each Party shall
use the same standard of care in protecting the Confidential
Information of the other Party as it normally uses in protecting
its own trade secrets and proprietary information.
17.3 Notwithstanding any other provision of this Agreement, no
information received by a Party hereunder shall be Confidential
Information if said information is or becomes:
(a) published or otherwise made available to the public other
than by a breach of this Agreement;
(b) furnished to a Party by a third party without restriction on
its dissemination;
(c) approved for release in writing by the Party designating
said information as Confidential Information;
(d) known to, or independently developed by, the Party receiving
Confidential Information hereunder without reference to or
use of said Confidential Information; or
(e) disclosed to a third party by the Party transferring said
information hereunder without restricting its subsequent
disclosure and use by said third party.
17.4 In the event that either Party determines on the advice of its
counsel that it is required to disclose any information pursuant
to applicable law or receives any demand under lawful process to
disclose or provide information of the other Party that is subject
to the confidentiality provisions hereof, such Party shall notify
the other Party prior to disclosing and providing such information
and shall cooperate at the expense of the requesting Party in
seeking any reasonable protective arrangements requested by such
other Party. Subject to the foregoing, the Party that receives
such request may thereafter disclose or provide information to the
extent required by such law (as so advised by counsel) or by
lawful
-26-
process.
18.0 REPORTS AND COMMUNICATIONS
18.1 Each Party hereby appoints a Program Manager whose
responsibilities shall include acting as a focal point for the
technical and commercial discussions between them related to the
subject matter of this Agreement, to include monitoring within his
or her respective company the distribution of Confidential
Information received from the other Party and assisting in the
prevention of the unauthorized disclosure of Confidential
Information within the company and to third parties. The Program
Managers shall also be responsible for maintaining pertinent
records and arranging such conferences, visits, reports and other
communications as are necessary to fulfill the terms and
conditions of this Agreement. The names, addresses and telephone
numbers of the Program Managers will be communicated between the
Parties from time to time.
19.0 GENERAL
19.1 AMENDMENT: This Agreement may be modified only by a written
document signed by duly authorized representatives of the Parties.
19.2 FORCE MAJEURE: A Party shall not be liable for a failure or delay
in the performance of any of its obligations under this Agreement
where such failure or delay is the result of fire, flood, or other
natural disaster, act of God, war, embargo, riot, labor dispute,
unavailability of raw materials or utilities (provided that such
unavailability is not caused by the actions or inactions of the
Party claiming force majeure), or the intervention of any
government authority, providing that the Party failing in or
delaying its performance immediately notifies the other Party of
its inability to perform and states the reason for such inability.
19.3 ASSIGNMENT: This Agreement may not be assigned by any Party hereto
without the written consent of the other Party; provided that
Xxxxxxxxx may assign its rights but not its obligations hereunder
as collateral security to any bona fide financial institution
engaged in acquisition financing in the
-27-
ordinary course providing financing to consummate the transactions
contemplated by the Purchase Agreement or any bona fide financial
institution engaged in acquisition financing in the ordinary
course through whom such financing is refunded, replaced, or
refinanced and any of the foregoing financial institutions may
assign such rights in connection with a sale of Xxxxxxxxx or the
Business in the form then being conducted by Xxxxxxxxx
substantially as an entirety. Subject to the foregoing, all of the
terms and provisions of this Agreement shall be binding upon, and
inure to the benefit of, and shall be enforceable by, the
respective successors and assigns of the Parties hereto.
19.4 COUNTERPARTS: This Agreement may be executed simultaneously in two
or more counterparts, each of which shall be deemed an original
and all of which together shall constitute but one and the same
instrument.
19.5 CHOICE OF LAW: This Agreement, and the rights and obligations of
the Parties hereto, shall be interpreted and governed in
accordance with the laws of the State of California, without
giving effect to its conflicts of law provisions.
19.6 WAIVER: Should either of the Parties fail to exercise or enforce
any provision of this Agreement such failure shall not be
construed as constituting a waiver or a continuing waiver of its
rights to enforce such provision or right or any other provision
or right. Should either of the Parties waive any provision or
right under this Agreement, such waiver shall not be construed as
constituting a waiver of any other provision or right.
19.7 SEVERABILITY: If any provision of this Agreement or the
application thereof to any situation or circumstance shall be
invalid or unenforceable, the remainder of this Agreement shall
not be affected, and each remaining provision shall be valid and
enforceable to the fullest extent.
19.8 LIMITATION OF LIABILITY: IN NO EVENT SHALL EITHER PARTY BE LIABLE
FOR ANY INDIRECT, SPECIAL, INCIDENTAL OR CONSEQUENTIAL DAMAGES
RESULTING FROM THE OTHER PARTY'S PERFORMANCE OR FAILURE TO PERFORM
UNDER THIS AGREEMENT, OR THE FURNISHING, PERFORMANCE, OR USE OF
ANY GOODS OR SERVICES SOLD PURSUANT HERE-
-28-
TO, WHETHER DUE TO BREACH OF CONTRACT, BREACH OF WARRANTY,
NEGLIGENCE OR OTHERWISE, REGARDLESS OF WHETHER THE NONPERFORMING
PARTY WAS ADVISED OF THE POSSIBILITY OF SUCH DAMAGES OR NOT.
19.9 EFFECT OF HEADINGS: The headings and sub-headings contained herein
are for information purposes only and shall have no effect upon
the intended purpose or interpretation of the provisions of this
Agreement.
19.10 INTEGRATION: The agreement of the Parties, which is composed of
this Agreement and the Exhibits hereto and the documents referred
to herein, constitutes the entire agreement and understanding
between the Parties with respect to the subject matter of this
Agreement and integrates all prior discussions and proposals
(whether oral or written) between them related to the subject
matter hereof.
19.11 PUBLIC ANNOUNCEMENT: Prior to the closing of the transactions
contemplated under the Purchase Agreement, neither Xxxxxxxxx nor
National shall, without the approval of the other Party hereto,
make any press release or other public announcement concerning the
terms of the transactions contemplated by this Agreement, except
as and to the extent that any such Party shall be so obligated by
law, in which case the Party shall use its Best Efforts to advise
the other Party thereof and the Parties shall use their Best
Efforts to cause a mutually agreeable release or announcement to
be issued; provided that the foregoing shall not preclude
communications or disclosures necessary to (a) implement the
provisions of this Agreement or (b) comply with accounting,
securities laws and Securities and Exchange Commission disclosure
obligations. Xxxxxxxxx shall provide National with a reasonable
opportunity to review and comment on any references to National
made by Xxxxxxxxx (and shall not include any such references to
National without the written consent of National, which consent
shall not be unreasonably withheld or delayed) in any written
materials that are intended to be filed with the Securities and
Exchange Commission in connection with obtaining financing
required to effect the transactions contemplated in connection
with the Purchase Agreement or intended to be distributed to
prospective purchasers pursuant to an offering made under Rule
144A promulgated
-29-
under the Securities Act of 1933 in connection with obtaining such
financing.
19.12 NO PARTNERSHIP OR AGENCY CREATED: Nothing contained herein or done
pursuant to this Agreement shall constitute the Parties as
entering upon a joint venture or partnership, or shall constitute
either Party the agent for the other Party for any purpose or in
any sense whatsoever.
19.13 BINDING EFFECT: This Agreement and the rights and obligations
hereunder shall be binding upon and inure to the benefit of the
Parties hereto and to their respective successors and assigns.
19.14 NOTICES: All notices, requests, demands and other communications
which are required or may be given under this Agreement shall be
in writing and shall be deemed to have been duly given when
received if personally delivered; when transmitted if transmitted
by telecopy, electronic or digital transmission method; the day
after it is sent, if sent for next day delivery to a domestic
address by a recognized overnight delivery service (e.g. Federal
Express) and upon receipt, if sent by certified or registered
mail, return receipt requested. In each case notice shall be sent
to:
National: National Semiconductor Corporation
0000 Xxxxxxxxxxxxx Xxxxx
X.X. Xxx 00000
XX 00-000
Xxxxx Xxxxx, XX 00000-0000
Attn: General Counsel
FAX: (000) 000-0000
Fairchild: Xxxxxxxxx Semiconductor Corporation
MS 01-00 (General Counsel)
000 Xxxxxxx Xxxxxx
Xxxxx Xxxxxxxx, XX 00000
FAX: (000) 000-0000
or to such other place as such Party may designate as to itself by
written notice to the other Party.
-30-
IN WITNESS WHEREOF, the Parties have had this Agreement executed
by their respective duly authorized officers on the day and date first written
above. The persons signing warrant that they are duly authorized to sign for and
on behalf of the respective parties.
NATIONAL SEMICONDUCTOR CORPORATION
By: /s/ Xxxx X. Xxxxx III
----------------------------------
Title: Senior Vice President
XXXXXXXXX SEMICONDUCTOR CORPORATION
By: /s/ Xxxxxx X. Xxxxxx
----------------------------------
Title: Executive Vice President, CFO
-31-
EXHIBIT A
PROCESSES
4-inch Wafer Process Flows: Fairchild Maine Fab 4100
--------------------------------------------------------------------------------
Process Description and
Process Name Acceptance Specification Status
--------------------------------------------------------------------------------
ANALOG 5(mu) Bipolar Process Prod
Spec: Exhibit F - Fab 4100 "ANALOG"
--------------------------------------------------------------------------------
BUS 4(mu) Bipolar, Low Power Schottky optimized for Prod
Bus Interface applications
Spec: Exhibit F - Fab 4100 "BUS"
--------------------------------------------------------------------------------
CGS 4(mu) Bipolar, Low Power Schottky optimized for Prod
Clock Generator applications
Spec: Exhibit F - Fab 4100 "CGS"
--------------------------------------------------------------------------------
DRAM 3(mu) FAST, Bipolar Schottky optomized for DRAM Prod
controller applications
Spec: Exhibit F- Fab 4100 "DRAM"
--------------------------------------------------------------------------------
DTCOMM 3(mu) FAST, Bipolar Schottky optimized for data Prod
communications applications
Spec: Exhibit F - Fab 4100 "DTCOMM"
--------------------------------------------------------------------------------
DTP 4(mu) Bipolar, Low Power Schottky Prod
Spec: Exhibit F- Fab 4100 "DTP"
--------------------------------------------------------------------------------
LAN 4(mu) Bipolar, Low Power Schottky optimized for Prod
LAN applications
Spec: Exhibit F- Fab 4100 "LAN"
--------------------------------------------------------------------------------
PTP 4(mu) Bipolar, Low Power Schottky optimized for Prod
point-to-point applications
Spec: Exhibit F - Fab 4100 "PTP"
--------------------------------------------------------------------------------
PTPCMOS 4(mu) Si Gate CMOS optimized for point-to-point Prod
applications
Spec: Exhibit F - Fab 4100 "PTPCMOS"
--------------------------------------------------------------------------------
RTCCMOS 3(mu) Si Gate CMOS optimized for real time clock Prod
applications
Spec: Exhibit F - Fab 4100 "RTCCMOS"
--------------------------------------------------------------------------------
5 inch Wafer Process Flows: Fairchild Maine Fab 5100
--------------------------------------------------------------------------------
Process Name Process Description and
Acceptance Specification Status
--------------------------------------------------------------------------------
GA20 2(mu) FACT Gate Arrays Prod
Spec: Exhibit F - Fab 5100 "GA20"
--------------------------------------------------------------------------------
ALS15 1.5(mu) Bipolar, Low Power Schottky for Read Prod
Channel circuits
Spec: Exhibit F - Fab 5100 "ALS15"
--------------------------------------------------------------------------------
CGSP/E 2.5(mu) HCMOS Prod
Spec: Exhibit F - Fab 5100 "GCSP/E"
--------------------------------------------------------------------------------
6-inch Wafer Process Flows: Xxxxxxxxx Maine Fab 6001
--------------------------------------------------------------------------------
Process Description and Equivalency
Process Name Acceptance Specification Weight Status
--------------------------------------------------------------------------------
ABIC2L ABiC-4 with two layers of metal, with a 1.65 Dev
mid-flow inventory point for subsequent 06
ASIC personalization. 0.8u BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC2L &
ABIC2LM"
--------------------------------------------------------------------------------
ABIC2LM ABiC-4 with two layers of metal, for use 1.65 Prod
in RF products. 0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC2L &
ABIC2LM"
--------------------------------------------------------------------------------
ABIC3L ABiC-4 with three layers of metal, with 1.85 Dev
a mid-flow inventory point for 06
subsequent ASIC personalization.
0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC3L & ABIC4L"
--------------------------------------------------------------------------------
ABIC4L ABiC-4 with four layers of metal, with a 2.00 Dev
mid-flow inventory point for subsequent 06
ASIC personalization. 0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC3L &
ABIC4L"
--------------------------------------------------------------------------------
ABIC52L ABiC-5 with two layers of metal and 1.65 Dev
0.5(mu), three sided emitter, for use in 06
RF products. CMOS remains at 0.8(mu)
Spec: Exhibit F - Fab 6001 "ABIC52L"
--------------------------------------------------------------------------------
-2-
--------------------------------------------------------------------------------
BUS 1.0(mu) BiCMOS (1.0BCT) 1.5 Prod
Spec: Exhibit F - Fab 6001 "BUSA & CGS10"
--------------------------------------------------------------------------------
CS080C 0.8(mu) Core CMOS, with two layers of 1.0 Prod
metal and W-plug contact structure.
Spec: Exhibit F - Fab 6001 "CS080C"
--------------------------------------------------------------------------------
CS080CB1 BiCMOS version of CS080, with two layers 1.45 Prod
of metal and isolated NMOS devices
Spec: Exhibit F - Fab 6001 "CS080CB1"
--------------------------------------------------------------------------------
CS080CBTX BiCMOS version of CS080, with two layers 1.27 Prod
of metal and conventional epi, emulating
CS080AB run in Texas
Spec: Exhibit F - Fab 6001 "CS080CBTX"
--------------------------------------------------------------------------------
CS080CBIHY BiCMOS version of CS080, with two layers 1.45 Dev
of metal, isolated NMOS devices, high 06
voltage NPN and Schottky diode
Spec: Exhibit F - Fab 6001 "CS080CBIHY"
--------------------------------------------------------------------------------
CS080CBIP BiCMOS version of CS080, with two layers 1.45 Dev
of metal, isolated NMOS devices and 06
double poly capacitor
Spec: Exhibit F - Fab 6001 "CS080CBIP"
--------------------------------------------------------------------------------
CS080CBIVU BiCMOS version of CS080, with two layers 1.45 Dev
of metal isolated NMOS devices and 04
vertical PNP device
Spec: Exhibit F - Fab 6001 "CS080CBIVU"
--------------------------------------------------------------------------------
CGS10 1.0(mu) BiCMOS (1.0BCT) 1.5 Prod
Spec: Exhibit F - Fab 6001 "BUS & CGS10"
--------------------------------------------------------------------------------
-3-
6-inch Wafer Process Flows: Fairchild Utah Fab 3
--------------------------------------------------------------------
Process Name Process Description and
Acceptance Specification Status
--------------------------------------------------------------------
CE80SLM 0.8(mu) EPROM process with one layer of Prod
metal and AMG style cells
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CE080DLM 0.8(mu) EPROM process with two layers of Prod
metal and AMG style cells
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CS100P 1.0(mu) Core CMOS process, with Prod
poly-to-poly capacitor and two layers of
metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CS100HE2 Dense EEPROM variation of CS100, with Prod
double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CS80SG Low density EEPROM variation of CS080 Dev 07
with double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CS80SG3 Low density EEPROM variation of CS080 Dev 06
with double poly and triple metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
CS065SE Dense EEPROM variation of CS065S, with Dev 05
double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------
The following process flows are being discontinued, and no long term
manufacturing commitment can be supported.
--------------------------------------------------------------------
Process Description and
Process Name Acceptance Specification Status
--------------------------------------------------------------------
CE130 1.2(mu) EPROM process with one layer of Obsolete
metal and "Split Gate" style cells on
Spec: SOP-3060, XX-0000, XX-0000 (Salt 4/20/97
Lake)
--------------------------------------------------------------------
-4-
Exhibit B
Product List and Supporting Data
Products manufactured in West Jordan, Utah
-------------------------------------------------------------------------------------------------------------------------------
Division Business AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost Share
Unit Wafer/Hour Yield
-------------------------------------------------------------------------------------------------------------------------------
Analog DAP A7 ADC12062 ADC1206BZ6 CS100HE2 N/A N/A 48% 80%
Analog Mil 1T KSD64 KSD64A XX000XX0 X/X X/X X/X X/X
Analog DAP A5 LM75 LM75A CS100HE2 Versatest V210 N/A 51% 85% Yes
Analog DAP AT LM78 LM78A CS100HE2 N/A 0.88 45% 75%
Analog POWER 6J LM3810 LM3810A XX000XX0 X/X X/X X/X X/X
Analog FPD G2 LMC8310 LMC8310A XX000XX0 X/X X/X X/X X/X
Analog AMPS G2 LMC6953 LMC6953A CS100HE2 N/A N/A 50% 84%
Analog AMPS 6J LMC6980 LMC6980A XX000XX X/X X/X X/X X/X
Analog POWER 6J LM3621A LM3621A XX000XX0 X/X X/X X/X X/X
Analog POWER 6J LM3641 LM3641B XX000XX0 X/X X/X X/X X/X
Analog POWER 2U LP3470 XX0000XX XX000XX0 X/X X/X X/X X/X
PSD MICRO 2U COP7C256 COP7C256B CE80SLM Versatest V2 0.4 44% 73% Yes
PSD MICRO 2U COP7C257 COP7C257B CE80SLM Versatest V2 0.4 44% 73% Yes
PSD MICRO 2U COP8780 COP8780C CE130 Versatest V2 N/A 47% 79%
PSD MICRO 2U NMC8C64 NMC8C64A CE130 Versatest V2 1.5 52% 87% Yes
PSD MICRO 2U COP87SAC COP87SACA CE80DLM Versatest V2 0.6 51% 81% Yes
PSD MICRO 2U COP8SAA7 COP8SAA7A CE80DLM Versatest V2 0.3 53% 85%
PSD MICRO 2U CR16AHT7 CR16AHT7A CE80DLM Versatest V2 0.8 20% 33%
PSD MICRO 2U XX00XXX0 XX00XXX0X CS065SE Versatest V2 0.8 N/A N/A
PSD MICRO 2U XX00XXX0 XX00XXX0X CS065SE Versatest V2 2.4 N/A N/A
All devices which show N/A for sort are sorted eithr in Santa Calra or Malacca
(NSC)
Exhibit B
Product List and Supporting Data
Products manufactured in Arlington, Texas
------------------------------------------------------------------------------------------------------------------------------
Division Business AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Unit Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------
Memory E2PROM 84 NMC24C16A CS160/EE Megatest Q2/52 1.50 55% 92%
Memory E2PROM 84 NMC25C14A CS160/EE Megatest Q2/52 0.35 55% 92%
Memory E2PROM 84 NMC59C16A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC66C02A CS160/EE Megatest Q2/52 1.50 55% 92% Yes
Memory E2PROM 84 NMC66C04A CS160/EE Megatest Q2/52 0.67 55% 92%
Memory E2PROM 84 NMC66C06A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC66C08A CS160/EE Megatest Q2/52 0.75 55% 92%
Memory E2PROM 84 NMC66C16A CS160/EE Megatest Q2/52 1.50 55% 92%
Memory E2PROM 84 NMC66C46A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC66C47A CS160/EE Megatest Q2/52 0.92 55% 92% Yes
Memory E2PROM 84 NMC66C56A CS160/EE Megatest Q2/52 1.33 55% 92% Yes
Memory E2PROM 84 NMC66C57A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC66C66A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC88C06A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC88C11A CS200B/EE Megatest Q2/52 0.67 55% 92%
Memory E2PROM 84 NMC88C46A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC88C47A CS160/EE Megatest Q2/52 0.92 55% 92%
Memory E2PROM 84 NMC93C06A CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC93C07B CS160/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC93C11A CS160/EE Megatest Q2/52 0.67 55% 92%
Memory E2PROM 84 NMC93C46C CS160/EE Megatest Q2/52 1.00 55% 92% Yes
Memory E2PROM 84 NMC93C47A CS200B/EE Megatest Q2/52 0.92 55% 92%
Memory E2PROM 84 NMC93C55A CS200B/EE Megatest Q2/52 1.20 55% 92%
Memory E2PROM 84 NMC93C56B CS200B/EE Megatest Q2/52 1.33 55% 92%
Memory E2PROM 84 NMC93C57C CS200B/EE Megatest Q2/52 0.40 55% 92%
Memory E2PROM 84 NMC93C66A CS200B/EE Megatest Q2/52 1.00 55% 92%
Memory E2PROM 84 NMC95C12A CS160/EE Megatest Q2/52 0.33 55% 92%
Memory E2PROM 84 NMC93C12C CS160/EE Megatest Q2/52 0.33 55% 92%
Logic CMOS W1 GTLP16612B6B CS080A Megatest Q2/52 Non-sort 55% 92%
Exhibit B
Product List and Supporting Data
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
ANALOG COMLINEAR R3 307010A6B 307010A6B-BAA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX X0 000000X0X 397012A6B-BAA ABIC2LM NATIONAL N/A N/A N/A
ANALOG COMLINEAR R4 397013B6B 397013B6B-BBA ABIC2LM NATIONAL N/A N/A N/A
ANALOG COMLINEAR R4 397013B6B 397013B6B-BCA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX X0 000000X0X 387017A6B-BAA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX XXX 0X XX0000X0X DM8640A4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8641A4B DM86414B-TAB BUS MCT20XX 2.4 53% 89%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8833B4B DM8833B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8834B4B DM8834B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8835B4B DM8835B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8836B4B DM8836B4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8837B4B DM8837B4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8838A4B DM8838A4B-TAB BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8839B4B DM8839B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DP7303C4B DP7303C4B-TAA BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7304C4B DP7304C4B-TAA BUS MCT20XX 2.4 52% 86%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7307C4B DP7307C4B-TAA BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7308C4B DP7308C4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1662C4B DS1662C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS1667C4B DS1667C4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1776Z4B DS1776Z4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1772Z4B DS1777Z4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS55160C4B DS55160C4B-TAA BUS MCT20XX 2.4 55% 91%
CIRCUIT
ANALOG INTERFACE BUS 4K DS55161C4B DS55161C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS55162C4B DS55162C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS76S10A4B DS76S10A4B-TAA BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DS76S11A4B DS76S11A4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K T3883B6B T3883B6B-BAB BUS BCT1.0 MCT20XX 1.9 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K T3884B6B T3884B6B-BGA BUS BCT1.0 MCT20XX 1.9 51% 85%
CIRCUIT
ANALOG INTERFACE BUS 4K T3886B6B T3886B6B-BLA BUS BCT1.0 MCT20XX 1.9 52% 86%
CIRCUIT
ANALOG INTERFACE DATACOM X0 XX0000X0X DS1619A4B-TAA DTCOMM MCT20XX 2.4 55% 91%
ANALOG INTERFACE DATACOM X0 XX00XX00X0X DS26LS31B4B-TAA DTCOMM MCT20XX 2.4 55% 96% YES
ANALOG INTERFACE DATACOM X0 XX00XX00X0X DS26LS31B4B-TAA/E DTCOMM MCT20XX 2.4 55% 92%
ANALOG INTERFACE DATACOM X0 XX00XX00X0X DS26LS32B4B-TAA DTCOMM MCT20XX 2.4 56% 93% YES
ANALOG INTERFACE DATACOM X0 XX00XX00X0X DS26LS32B4B-TAA/E DTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX00X0X DS26LS33B4B-TAA DTCOMM MCT20XX 2.4 55% 92% YES
ANALOG INTERFACE DATACOM H1 DS347B4B DS3487B4B-TAA DTCOMM MCT20XX 2.0 56% 94% YES
ANALOG INTERFACE DATACOM X0 XX0000X0X DS3586A4B-TAA DTCOMM MCT20XX 2.0 58% 96% YES
ANALOG INTERFACE DATACOM H1 DS3587B4B DS3587B4B-TAA DTCOMM MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7632A4B-TAA DTCOMM MCT20XX 1.2 57% 95%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7632A4B-TAA/E DTCOMM MCT20XX 1.2 55% 92%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7633A4B-TAA DTCOMM MCT20XX 1.2 55% 92%
ANALOG INTERFACE DATACOM X0 XX00X000X0X DS78C120A4B-TAA DTCOMM MCT20XX 2.0 55% 92%
ANALOG INTERFACE DATACOM X0 XX00X000X0X DS78C120A4B-TAA/E DTCOMM MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX000X0X DS78LS120A4B-TAA DTCOMM MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX000X0X DS78LS120A4B-TAA/E DTCOMM MCT20XX 2.0 N/A N/A
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8921A4B-TAA DTCOMM MCT20XX 2.4 56% 94%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS89922A4B-TAA DTCOMM MCT20XX 2.4 54% 90%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8923A4B-TAA DTCOMM MCT20XX 2.4 55% 92%
ANALOG INTERFACE DATACOM H1 DS8925B4B DS8925B4B-TBA DTCOMM MCT20XX 2.4 53% 89%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8926A4B-TAA-PQ DTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8933A4B-TAA DTCOMM MCT20XX 2.4 54% 90%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8934A4B-TAA DTCOMM MCT20XX 2.4 50% 84%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8935A4B-TAA DTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8936A4B-TAA-PQ DTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM H1 9636A4B 9636A4B-TAA DTCOMM MCT20XX 2.2 55% 92%
ANALOG INTERFACE DATACOM H1 9637A4B 9637A4B-TBA DTCOMM MCT20XX 2.2 57% 95%
ANALOG INTERFACE DATACOM H1 9638A4B 9638A4B-TDB DTCOMM MCT20XX 2.2 55% 92%
ANALOG INTERFACE DATACOM H1 9638A4B 9638A4B-TDB/E DTCOMM MCT20XX 2.2 N/A N/A
ANALOG INTERFACE DATACOM H1 9639A4B 9639A4B-TAA DTCOMM MCT20XX 2.2 57% 95%
Exhibit B
Product List and Supporting Data
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE MULTIPOINT 80 DM8830E4B DM8830E4B-TAB DTP MCT20XX 2.1 55% 92%
ANALOG INTERFACE MULTIPOINT 80 DM8830E4B DM8830E4B-TAB/D DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DM8831B4B DM8831B4B-TAB DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DM8832B4B DM8832B4B-TAB DTP MCT20XX 2.1 53% 89%
ANALOG INTERFACE MULTIPOINT 80 DM8832B4B DM8832B4B-TAB/E DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS16195C4B DS16195C4B-TBA DTP MCT20XX 2.1 56% 93% YES
ANALOG INTERFACE MULTIPOINT 80 DS16196B4B DS16196B4B-TAA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS16196C4B DS16196C4B-TAA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS1650A4B DS1650A4B-TAA DTP MCT20XX 2.1 57% 95%
ANALOG INTERFACE MULTIPOINT 80 DS1652A4B DS16542A4B-TAA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS1695A4B DS1695A4B-TBA DTP MCT20XX 2.1 55% 92% YES
ANALOG INTERFACE MULTIPOINT 80 DS1696A4B DS1696A4B-TAA DTP MCT20XX 2.1 56% 94%
ANALOG INTERFACE MULTIPOINT 80 DS1697A4B DS1697A4B-TAA DTP MCT20XX 2.1 58% 97%
ANALOG INTERFACE MULTIPOINT 80 DS1698A4B DS1698A4B-TAA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS36276C4B DS36276C4B-TAA DTP MCT20XX 2.1 41% 69%
ANALOG INTERFACE MULTIPOINT 80 DS36277C4B DS36277C4B-TAA DTP MCT20XX 2.1 54% 90% YES
ANALOG INTERFACE MULTIPOINT 80 DS3695A4B DS3695A4B-TAA DTP MCT20XX 2.1 55% 92%
ANALOG INTERFACE MULTIPOINT 80 DS75113A4B DS75113A4B-TAB DTP MCT20XX 2.1 55% 92%
ANALOG INTERFACE MULTIPOINT 80 DS75114A4B DS75114A4B-TAB DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS75114A4B DS75114A4B-TAB/C DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 DS75115A4B DS75115A4B-TAB DTP MCT20XX 2.1 55% 92%
ANALOG INTERFACE MULTIPOINT 80 DS75176B4B DS75175B4B-TCA DTP MCT20XX 2.1 54% 90% YES
ANALOG INTERFACE MULTIPOINT 80 DS8820H4B DS8820H4B-TBB DTP MCT20XX 2.1 54% 90%
ANALOG INTERFACE MULTIPOINT 80 DS8820H4B DS8820H4B-TBB/E DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 LM163A4B LM163A4B-TAB DTP MCT20XX 2.1 32% 54%
ANALOG INTERFACE MULTIPOINT 80 LM3623A4B LM3623A4B-TAB DTP MCT20XX 2.1 55% 92%
ANALOG INTERFACE MULTIPOINT 80 LM3624A4B LM3624A4B-TAB DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 LM75107A4B LM75107A4B-TAB DTP MCT20XX 2.1 58% 97% YES
ANALOG INTERFACE MULTIPOINT 80 LM75108A4B LM75108A4B-TAB DTP MCT20XX 2.1 53% 88%
ANALOG INTERFACE MULTIPOINT 80 LM75122A4B LM75122A4B-TAB DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 LM75124A4B LM75124A4B-TAB DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 X172B4B X172B4B-TCB DTP MCT20XX 3.0 35% 58%
ANALOG INTERFACE MULTIPOINT 80 X173A4B X173A4B-TBB DTP MCT20XX 3.0 35% 58% YES
ANALOG INTERFACE MULTIPOINT 80 X174B4B X174B4B-TCB DTP MCT20XX 3.0 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 X175A4B X175A4B-TBB DTP MCT20XX 3.0 35% 58%
ANALOG INTERFACE MULTIPOINT 80 X176A4B X176A4B-TBB DTP MCT20XX 3.0 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 X177A4B X177A4B-TBB DTP MCT20XX 3.0 35% 58%
ANALOG INTERFACE MULTIPOINT 80 Y107A4B Y107A4B-TBA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 Y107A4B Y107A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 Y110A4B Y110A4B-TBA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9614A4B 9614A4B-TBA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9614A4B 9614A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9614A4B 9614A4B-TBA/E DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9615A4B 9615A4B-TBA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9615A4B 9615A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9615A4B 9615A4B-TBA/E DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9622A4B 9622A4B-TBA DTP MCT20XX 2.1 N/A N/A
ANALOG INTERFACE MULTIPOINT 80 9627A4B 9627A4B-TCA DTP MCT20XX 2.1 N/A N/A
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE PT TO PT H2 DS14C202A6B DS14C202A6B-BCA-PQ CS080CBIHY MCT20XX 2.1 X/X X/X
XXXXXX XXXXXXXXX XX XX XX X0 XX00X000X0X DS14C211A6B-BAA CS080CBIHY MCT20XX 2.1 N/A N/A
ANALOG INTERFACE PT TO PT H2 DS14C89C4B DS14C89C4B-TCA PTPCMOS MCT20XX 2.1 54% 90% YES
ANALOG INTERFACE PT TO PT H2 DS14185A4B DS14185A4B-TCA PTP MCT20XX 3.0 57% 95% YES
ANALOG INTERFACE PT TO PT H2 DS14196A4B DS14169A4B-TAA PTP MCT20XX 2.1 57% 95% YES
ANALOG INTERFACE PT TO PT H2 DS75150A4B DS75150A4B-TBB PTP MCT20XX 2.1 58% 96%
ANALOG INTERFACE PT TO PT H2 DS75154A4B DS75154A4B-TBB PTP MCT20XX 2.1 58% 96%
ANALOG INTERFACE PT TO PT H2 DS8933A4B DS8933A4B-TAA PTP MCT20XX 2.1 50% 84%
ANALOG INTERFACE PT TO PT H2 DS8934B4B DS8934B4B-TBA PTP MCT20XX 2.1 52% 87%
ANALOG INTERFACE PT TO PT X0 XX0000X0X FM1488A4B-TAA PTP MCT20XX 2.1 58% 96%
ANALOG INTERFACE PT TO PT H2 LM1589B4B LM1589B4B-TBB PTP MCT20XX 2.1 58% 97%
ANALOG INTERFACE PT TO PT H2 LM1590B4B LM1590B4B-TBB PTP MCT20XX 2.1 58% 97%
ANALOG INTERFACE PT TO PT H2 9616A4B 9616A4B-TDA DTCOMM MCT20XX 2.1 N/A N/A
H2 DS14C88D4B PTPCMOS 54% 90% YES
Exhibit B
Product List and Supporting Data
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
ANALOG WIRELESS ABIC 9W LMX150AD6B LMX1501AD6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX1511D6B LMX1511D6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2301D6B LMX2301D6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX2305D6B LMX2305D6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX2306B6B LMX2306B6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2315D6B LMX2315D6B-BAA ABIC2LM MCT20XX 0.2 43% 71% YES
ANALOG WIRELESS ABIC 9W LMX2316B5B LMX2316B6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2320D6B LMX2320D6B-BAA ABIC2LM MCT20XX 0.2 46% 76%
ANALOG WIRELESS ABIC 9W LMX2331B6B LMX2331C6B-BAA ABIC2LM MCT20XX 0.2 36% 60% YES
ANALOG WIRELESS ABIC 9W LMX2332C6B LMX2332C6B-BAA ABIC2LM MCT20XX 0.2 34% 57% YES
ANALOG WIRELESS ABIC 9W LMX2335C6B LMX2335C6B-BAA ABIC2LM MCT20XX 0.2 40% 66% YES
C&C AUTO XXXXXXX XXXXXX 00 XX0000X0X XX0000X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO XXXXXXX XXXXXX 00 XX0000X0X XX0000X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DP8310C4B DP8310C4B-TBB ANALOG MCT20XX 2.3 51% 85%
C&C AUTO DISPLAY DRIVER 42 DP8311C/M4B DP8311C4/M4B-TBB ANALOG MCT20XX 2.3 53% 89%
C&C AUTO DISPLAY DRIVER 42 DP8311C4B DP8311C4B-TBB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS0025A4B DS0025A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS0026B4B DS0026B4B-TBB ANALOG MCT20XX 2.3 58% 96% YES
C&C AUTO DISPLAY DRIVER 42 DS0026B4B DS0026B4B-TBB/E ANALOG MCT20XX 2.3 50% 83%
C&C AUTO DISPLAY DRIVER 42 DS0056B4B DS0056B4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS75325D4B DS75325D4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS75361A4B DS75361A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS75365A4B DS75365A4B-TBB ANALOG MCT20XX 2.3 55% 92%
C&C AUTO DISPLAY DRIVER 42 DS75450C4B DS75450C4B-TBB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 DS75451B4B DS75451B4B-TAB ANALOG MCT20XX 2.3 56% 93%
C&C AUTO DISPLAY DRIVER 42 DS75452B4B DS75452B4B-TAB ANALOG MCT20XX 2.3 55% 91% YES
C&C AUTO DISPLAY DRIVER 42 DS75453B4B DS75453B4B-TBB ANALOG MCT20XX 2.3 56% 93% YES
C&C AUTO DISPLAY DRIVER 42 DS75454B4B DS75454B4B-TBB ANALOG MCT20XX 2.3 59% 98%
C&C AUTO XXXXXXX XXXXXX 00 XX00X00X0X XX00X00X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 LM106E4B LM106E4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 LM1514A4B LM1514A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO XXXXXXX XXXXXX 00 XX000X0X XX000X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO XXXXXXX XXXXXX 00 0000X/X0X 0000X/X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 7710A/M4G 7710A/M4G-TBA ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 7710A4B 7710A4B-TBA ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 7710A4G 7710A4G-TBA/C ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO XXXXXXX XXXXXX 00 0000/X0X 0000/X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO XXXXXXX XXXXXX 00 0000X/X0X 0000X/X0X-XXX ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 7711A/M4G 7711A/M4G-TBA ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 7711A4G 7711A4G-TBA/C ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 9665B4B 9665B4B-TCA ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 9667B4B 9667B4B-TCA ANALOG MCT20XX 2.3 55% 92% YES
C&C AUTO DISPLAY DRIVER 42 9667B4B 9667B4B-TCA/E ANALOG MCT20XX 2.3 N/A N/A
C&C AUTO DISPLAY DRIVER 42 9668B4B 9668B4B-TDA ANALOG MCT20XX 2.3 56% 93%
C&C CLASIC 7H CS0354B6 CS0354B6-BBAB CS80CBI XXXXXXXXX X/X X/X X/X
X/X X/X
Xxxxxxx X
Product List and Supporting Data
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
C&C LAN MEDIA 15 DP8392C4 DP8392C4-TAA LAN MCT20XX 2.1 51% 85% YES
C&C LAN MEDIA 15 DP8394D4 DP8394D4-TBA LAN MCT20XX 2.1 N/A N/A
C&C PLEXUS X3 DP73840B6B DP73840B6B-BBB-612 CS080CBTX LTX TRILLIU 3.3 38% 64%
C&C PLEXUS X3 DP73840B6B DP73840B6B-BBB-635 CS080CBTX LTX TRILLIU 3.3 38% 64%
C&C WAN ABIC 89 FNGM8902Z6B FNGM8902Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H841Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H842Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H847Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MB2581Z6B MB2581Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MB8902Z6B MB8902Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MJ2680Z6B MJ2680Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2331Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2518Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2532Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2533Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X XX0000X0X-XXX ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 SF2669Z6B SF2669Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 TS2501Z6B XX000X0X-XXX XXXX0X/0X NATIONAL X/X X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0 CA0500Y5-CAB GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1142Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1202Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1325Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1094Y5B CC1094Y5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1110Y5B CC1110Y5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1144Y5B CC1144Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX000X0X XX000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX000X0X-XXX XX00 SENTRY 20 2.0 49% 82%
C&C WAN GATE ARRAY 3D CC1191Y5B CC1191Y5B-CAF GA20 SENTRY 20 2.0 49% 82%
C&C WAN GATE ARRAY 3D CC1194Y5B CC1194Y5B-CAF GA20 SENTRY 20 2.0 52% 86%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Wafer/Hour Yield Share
------------------------------------------------------------------------------------------------------------------------------------
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1510Y5B CC1510Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 52% 86%
C&C WAN GATE ARRAY 3D CD1193Z5B CD1193Z5B-CAF GA20 SENTRY 20 2.0 49% 81%
C&C WAN GATE ARRAY 3D CD1251Z5B CD1251Z5B-CCF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1259Z5B-CAF GA20 SENTRY 20 2.0 44% 74%
Exhibit B
Product List and Supporting Data
------------------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer Yield Share
/Hour
------------------------------------------------------------------------------------------------------------------------------------
C&C XXX XXXX XXXXX 0X XX0000X0X CD1270Z5B-CAF GA20 SENTRY 20 2.0 43% 72%
C&C WAN GATE ARRAY 3D CD1301Z5B CD1301Z5B-CCF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1434Z5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1472Z5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1693Z5B-CAF GA20 SENTRY 20 2.0 44% 73%
C&C XXX XXXX XXXXX 0X XX0000X0X CE1136Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1435Y5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1471Y5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1690Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1954Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1955Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1956Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CI1532Z5B-CAF GA20 SENTRY 20 2.0 N/A N/A
PSD CGS 4N CGS100B2530A4B CGS100B2530A4B-TAB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS100B2531A4B CGS100B2531A4B-TAB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS2534Z6B CGS2534Z6B-BAB CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS2535Z6B CGS2535Z6B-BAB CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS2536Z6B CGS2536Z6B-BAB CGS10 MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX0000X0X XXX0000X0X-XXX CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS74B2525Y4B CGS74B2525Y4B-TDB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS74B2528A4B CGS74B2528A4B-TCB CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00XX0000X0X XXX00XX0000X0X-XXX CGSP/E MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00XX0000X0X XXX00XX0000X0X-XXX CGSP/E MCT20XX 2.0 56% 93%
PSD CGS 4N CGS74CT2526Z5B CGS74CT256Z5B-CBF CGSP/E MCT20XX 2.0 50% 83%
PSD CGS 4N CGS74C2525Z5B CGS74C2525Z5B-CCF CGSP/E MCT20XX 2.0 50% 83%
PSD CGS 4N CGS74C2526Z5B CGS74C2526Z5B-CCF CGSP/E MCT20XX 2.0 N/A N/A
PSD DRAM 81 DP8409A4B DP8409A4B-TAA DRAM N/A N/A N/A
PSD DRAM 81 DP8410A4B DP8410A4B-TAA DRAM X/X X/X X/X
XXX XXXX 00 X000X0X M632Y4B-TDB DRAM MCT20XX 2.0 41% 68%
PSD XXXX XXXXXXX 0X XXX000X0X XXX000X0X-XXX ALS15 MCT20XX 3.0 X/X X/X
XXX XXXX XXXXXXX 0X XXX000X0X DPC110A5B-CAA ALS15 MCT20XX 3.0 N/A N/A
PSD MASS STORAGE 4H DP84910DC5B DP84910DC5B-CEA ALS15 MCT20XX 3.0 46% 76% YES
PSD REAL TIME CLOCK 4C MM48167W4B MM48167W4B-TAA RTCCMOS NATIONAL N/A N/A N/A
PSD REAL TIME CLOCK 4C MM48174V4B MM48174V4B-TAA RTCCMOS NATIONAL N/A N/A N/A
PSD REAL TIME CLOCK 4C MM48274D4B MM48274D4B-TAA RTCCMOS NATIONAL N/A 42% 70% YES
PSD NOTEBOOK H6 PC77336 PC77336-A1A CS080C LTX TRILLIU 2.0 44% 73% YES
PSD DESKTOP 6F PC77332E1A PC77332E1A-B CS080C LTX TRILLIU 4.0 44% 73% YES
PSD DESKTOP 6F PC77306B1A PC77306B1A-BIBD CS080C LTX TRILLIU 4.0 43% 71% YES
PSD DESKTOP 6F PC77306B1A PC77306B1A-BIBR CS080C LTX TRILLIU 4.0 43% 71% YES
- Sort Wafer/Hour numbers reflect Family Level Averages on low running devices.
Individual Device UPH will be updated when material is available at Sort.
EXHIBIT C
PROCESS DEVELOPMENT SCHEDULE
The following processes, upon which development is underway, will be
regarded as complete when qualification is achieved to Class III, as
defined in National specification SOP-5-032 RA. Additional funding will be
required from National if programs are not completed due to National's
failure to perform its responsibilities by the Scheduled End of Work date.
Schedule
Process Site Description Completion Funding
------- ---- ----------- ---------- -------
CS080CBIVU Maine BiCMS version of CS080, May 25, 1997 $300K
with two layers of metal,
isolated NMOS devices and
vertical PNP device
CS065SE Utah Dense EEPROM variation of May 25, 1997 $300K
CS065S, with double poly
and double metal
As of November 19, 1996, the following processes had not yet achieved Class III
qualification, but they are expected to be Class III qualified by February 23,
1997. They are included here for reference only.
Scheduled
Process Site Description Completion
------- ---- ----------- ----------
ABIC2L Maine ABiC-4 with two layers of metal, with a Product Line
mid-flow inventory point for subsequent Dependent
ASIC personalization. 0.8(mu) BiCMOS
ABIC3L Maine ABiC-4 with three layers of metal, with Product Line
a mid-flow inventory point for Dependent
subsequent ASIC personalization.
0.8(mu) BiCMOS
ABIC4L Maine ABiC-4 with four layers of metal, with Product Line
a mid-flow inventory point for Dependent
subsequent ASIC personalization.
0.8(mu) BiCMOS
ABIC52L Maine ABiC-5 with two layers of metal and Feb. 23, 1997
0.5(mu), three sided emitter, for use
in RF products.
CMOS remains at 0.8(mu)
CS080CBIHY Maine BiCMOS Version of CS080, with two Jan. 19, 1997
layers of metal, isolated NMOS devices,
high voltage NPN and Schottky diode
CS080CBIP Maine BiCMOS version of CS080, with two Jan. 19, 1997
layers of metal, isolated NMOS devices
and double poly capacitor
CS80SG Utah Low density EEPROM variation of CS080 Dec. 5, 1996
with double poly and double metal
Spec:
CS80SG3 Utah Low density EEPROM variation of CS080 Jan. 19, 1997
with double poly and triple metal if product is
Spec: available
EXHIBIT D
CAPACITY REQUEST AND REPSONSE FORMATS
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx
Xxxxx Xxxxxxxx 0000 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
====================================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG DAP FM584MGCMOS 0 0 0 0 0 0 0 0
ANALOG DAP FMA24MGCMOS 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM4K4BUS 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM804DTP 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH14DTCOMM 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH24PTP 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH24PTPCMOS 0 0 0 0 0 0 0 0
ANALOG Total 4100 0 0 0 0 0 0 0 0
==============================================
==============================================
CCG AUDIO FMA94HV700 0 0 0 0 0 0 0 0
CCG CD FM424ANALOG 0 0 0 0 0 0 0 0
CCG CD FM424ANALOGCMOS 0 0 0 0 0 0 0 0
CCG LAN FM154LAN 0 0 0 0 0 0 0 0
CCG Total 4100 0 0 0 0 0 0 0 0
==============================================
==============================================
PSD DESKTOP FM4C4RTCMOS 0 0 0 0 0 0 0 0
PSD DESKTOP FM4N4CGS 0 0 0 0 0 0 0 0
PSD DESKTOP FM814DRAM 0 0 0 0 0 0 0 0
PSD Total 4100 0 0 0 0 0 0 0 0
==============================================
Grand Total 4100 0 0 0 0 0 0 0 0
===========================================================================
South Portland 4100 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
=======================================================================================
Workdays 34 27 28 35 27 27 35 27
==================================================---------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==================================================
==================================================
CCG WAN XX0X0XX00 0 0 0 0 0 0 0 0
CCG Total 5100 0 0 0 0 0 0 0 0
==================================================
==================================================
PSD DESKTOP FM4N5CGSP/E 0 0 0 0 0 0 0 0
PSD DESKTOP FM815ALS15 0 0 0 0 0 0 0 0
PSD MASSSTORAGE FM4H5MASSTOR 0 0 0 0 0 0 0 0
PSD Total 5100 0 0 0 0 0 0 0 0
==================================================
Grand Total 5100 0 0 0 0 0 0 0 0
============================================================================
South Portland 4100 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG INTERFACE FM4K680HV 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM4K6BUS 0 0 0 0 0 0 0 0
ANALOG DAP FM586CBIPC 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL FM7N6CBIVU 0 0 0 0 0 0 0 0
ANALOG AMPS FM7N6CSO80CBI 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM806CS80CBI 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC2L 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC4L 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC52L 0 0 0 0 0 0 0 0
ANALOG DAP FMA76CBIPC 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH16CS80C 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH26CS80C 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH26CBIHY 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR16ABIC2LM 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR36ABIC2LM 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR46ABIC2LM 0 0 0 0 0 0 0 0
ANALOG Total 6001 0 0 0 0 0 0 0 0
==============================================
==============================================
CCG LAN FM156LANCS65 0 0 0 0 0 0 0 0
CCG LAN FM156LANCS80 0 0 0 0 0 0 0 0
CCG WAN FM896ABIC4L 0 0 0 0 0 0 0 0
CCG WAN RM896ABIC3L 0 0 0 0 0 0 0
CCG CD FM896ABIC2L 0 0 0 0 0 0 0 0
CCG CD FMT9680CBI 0 0 0 0 0 0 0 0
CCG LAN FMX36LAN80CBTX 0 0 0 0 0 0 0 0
CCG Total 6001 0 0 0 0 0 0 0
==============================================
==============================================
PSD DESKTOP FM4N6CGS10 0 0 0 0 0 0 0
PSD DESKTOP FM4NCCS65CBI 0 0 0 0 0 0 0 0
PSD DESKTOP FM4N6CS80CBI 0 0 0 0 0 0 0 0
PSD DESKTOP FM6F6ES80C 0 0 0 0 0 0 0 0
PSD NOTEBOOK FMH66ES80C 0 0 0 0 0 0 0 0
PSD Total 6001 0 0 0 0 0 0 0 0
==============================================
Grand Total 6001 0 0 0 0 0 0 0 0
============================================================================
South Portland 4100 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG DAP CS100HE2 0 0 0 0 0 0 0 0
ANALOG INTERFACE CS100HE2 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL CS100HE2 0 0 0 0 0 0 0 0
ANALOG POWER MGT CS100HE2 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL CS080SG 0 0 0 0 0 0 0 0
ANALOG Total SLC 0 0 0 0 0 0 0 0
==============================================
==============================================
PSD CONTROLLERS CE130 0 0 0 0 0 0 0
PSD CONTROLLERS CE080DLM 0 0 0 0 0 0 0 0
PSD CONTROLLERS CS065SE 0 0 0 0 0 0 0 0
PSD Total SLC 0 0 0 0 0 0 0 0
==============================================
Grand Total LSC 0 0 0 0 0 0 0 0
============================================================================
South Portland 4100 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
SOUTH PORTLAND FM 4100 0 0 0 0 0 0 0 0
SOUTH PORTLAND FM 5100 0 0 0 0 0 0 0
SOUTH PORTLAND FM 6001 0 0 0 0 0 0 0 0
South Portland 0 0 0 0 0 0 0
Subtotal
SALT LAKE CITY 6-inch 0 0 0 0 0 0 0
==============================================
Grand Total 0 0 0 0 0 0 0 0
EXHIBIT D
Forecasting Timetable
=============================================================================================================
Period 12 Period 1 Period 2 Period 12
-------------------------------------------------------------------------------------------------------------
Week 1 2 3 4 5 1 2 3 4 1 2 3 4 1 2 3 4 5
----------------------------------------------------------------------------------------------------------------------
1
-------------------------------------------------------------------------------------------------------------
D 2 ZA A A ZA
-------------------------------------------------------------------------------------------------------------
A 3
-------------------------------------------------------------------------------------------------------------
Y 4
-------------------------------------------------------------------------------------------------------------
5 R Y R Y R Y R Y
======================================================================================================================
Actions Defined
R National provides 8-period Forecast to Xxxxxxxxx
Y Xxxxxxxxx provides capacity response to National
Z National places blanket, 3-period purchase order with Xxxxxxxxx
A National releases details of wafer starts for the following
period.
EXHIBIT E
DIE COST IMPACT SHARING
1.0 GENERAL
1.1 National and Xxxxxxxxx will implement 50:50 sharing of yield gain
and loss implemented in accordance with the principles set forth in
this Exhibit.
1.2 The yield adjustment amount will be calculated at the end of the
first six (6) fiscal periods ("Fiscal Half") from the Effective Date
and each Fiscal Half thereafter, retroactively. National will pay
Xxxxxxxxx a yield premium fee in the case of average yield
improvement; Xxxxxxxxx will reimburse National in the case of
average yield degradation.
1.3 Net Die Per Wafer (NDPW) will be used as the basis for the
calculation.
2.0 ESTABLISHING YIELD BASELINE
2.1 In order to qualify for die cost sharing, Products must (i) have
achieved a minimum production volume of at least ninety-six (96)
Wafers (i.e., the equivalent of at least four (4) 24-Wafer or eight
12-Wafer lots) per period for three (3) of the preceding six (6)
fiscal periods (a minimum of 288 Wafers) and (ii) have a stable
yield history (e.g., without known yield or test sensitivities). The
baseline NDPW of each qualifying Product as of the Effective Date
shall be the average NDPW for the preceding six (6) fiscal periods.
Baseline NDPWs will be reset twelve (12) fiscal periods ("Fiscal
Year") after the Effective Date and at the end of each Fiscal Year
thereafter.
2.2 A baseline NDPW will be established for a new Product after the
Product has achieved a minimum production volume of at least 96
Wafers per fiscal period (i.e., the equivalent of at least four (4)
24-Wafer or eight 12-Wafer lots) for three (3) of the preceding six
(6) fiscal periods (a minimum of 288 Wafers) and (ii) has
established a stable yield history (e.g., without known yield or
test sensitivities). Once a baseline NDPW has been established for a
Product and mutually agreed upon by the Parties, such baseline NDPW
will remain in effect until the next Fiscal Year reset point.
2.3 In case of a change in the sort program which affects the yield, a
new baseline NDPW will be mutually agreed upon based on the effect
of the change on the Product yield. The new baseline will apply to
all lots measured after the change has been implemented.
2.4 In the case of a Mask change which affects the yield, a new baseline
NDPW will be established as provided in Paragraph 2.2 of this
Exhibit.
2.5 For Products that are not sorted by Xxxxxxxxx the Parties will agree
on procedures to assure that production sort programs cannot be
changed without Xxxxxxxxx'x acknowledgment, and the provisions of
Paragraph 2.3 of this Exhibit shall apply to any such changes.
2.6 In order for a Product that is not sorted by Xxxxxxxxx to qualify
for die cost sharing, National must make wafer sort and yield data,
and wafers (at Xxxxxxxxx'x cost) as required for analysis, available
to Xxxxxxxxx on a timely basis and in conformance with Xxxxxxxxx'x
own internal requirements for such data.
3.0 CALCULATIONS
3.1 At the end of each Fiscal Half, a Product list to be used for the
yield adjustment calculation will be mutually agreed by the Parties.
Each Product in this list shall (i) have an established baseline
NDPW; (ii) have achieved a minimum production volume of at least
ninety-six (96) Wafers per period (i.e., the equivalent of four
24-Wafer or eight 12-Wafer lots) for three (3) of the preceding six
(6) fiscal periods (a minimum of 288 Wafers); and (iii) have
established a stable yield history (e.g., without known yield or
test sensitivities).
3.2 The percent change in NDPW for the preceding Fiscal Half will be
calculated for each qualifying Product based on the difference
between the baseline and actual NDPW for the Product;
3.3 The semiannual adjustment for die cost sharing will equal:
(Base Wafer Price) X (NDPW Percent Change) X (0.5) X (Wafers
Shipped)
3.4 The total adjustment will be the sum of the adjustments of the
qualifying Products.
3.5 Xxxxxxxxx will perform the die cost sharing calculation and provide
an accounting to National following the end of each Fiscal Half
together with an invoice or a credit for the die cost adjustment
amount.
4.0 OTHER
4.1 MYA will be used in conjunction with die cost sharing for purposes
of identifying "Maverick" wafers that will be discarded (unless
National agrees to accept). For Products that qualify for die cost
sharing, the baseline NDPW will be used as the basis for defining
the MYA for the Product.
4.2 Wafer price adjustments to reflect changes in Xxxxxxxxx'x
manufacturing cost base are independent of die cost sharing.
4.3 Products manufactured under the Mil/Aero Wafer and Services
Agreement between the Parties of even date herewith shall not
qualify for die cost sharing.
EXHIBIT F
WAFER ACCEPTANCE CRITERIA
Xxxxxxxxx Electrical Test Acceptance Method:
Acceptance of Xxxxxxxxx Wafers for shipment to National shall be determined per
mutually agreed upon electrical parameter test distribution performance with
standard test die. For the West Jordan, Utah fabs, all wafers will be subjected
to the Acceptance Criteria specified in West Jordan specifications: XXX-0000,
XX-0000 and TS-3021. For the South Portland, Maine fabs, all Wafers will be
tested to the electrical specifications, by Process, listed in this Exhibit,
with the acceptance methods stated below.
South Portland, Maine Wafer Acceptance and Wafer Sort:
1. Each lot will be sampled at PCM test prior to Wafer sort. The following
minimum sample size will be tested and the Wafer will be rejected if the
stated number, or more, of test sites on that Wafer fails a specified
electrical parameter;
Wafer Size #Wafers per lot #Sites per Wafer Reject on #Sites
Tested Failing
6 inch 5 5 3
5 inch 5 5 3
4 inch 3 5 3
2. In the event that one or more Wafers in the lot sample fail the above
criteria, then 100% testing of the remaining Wafers in the lot will be
performed and the above acceptance criteria applied to each Wafer.
3. Electrical Test parameter distributions will be made available to National
on a monthly basis.
Xxxxxxxxx Wafer Fabrication and National Wafer Sort:
1. A ten (10) Wafer lot sample will be tested to the applicable PCM
specification prior to shipment to National. Five (5) test sites per wafer
will be sampled as the basis for electrical acceptance, and three (3) of
those sites must pass the PCM test parameters. In the event that one or
more sample wafers fails the PCM tests, 100% testing of residual wafers
will be performed and all Wafers which pass the PCM will be shipped to
National.
2. Individual PCM specifications (by Process) are defined in Exhibit F.
3. Electrical Test parameter distributions will be made available on a
monthly basis.
Xxxxxxxxx Maine Fab 4100: "ANALOG"
----------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement
Method
----------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q2Beta 50 150 250 Gain Ic=1mA,
Vce=5.0V
Bjt NPN CBO Q2BVcbo 50 >50 N/A Volts If-10uA
Bjt NPN EBO Q2BVebo 6.5 7.0 7.5 Volts If=10uA
Bjt NPN CEO Q2LVceo 15 >15 N/A Volts If=10uA
Bjt Col to Col BV_iso 50 >50 N/A Volts If=5uA
----------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried Layer BL_RES 75 110 150 Ohms If=10mA
Diffusion Narrow Base N_RES 800 1000 1800 Ohms If=1mA
Diffusion Base BASERHO 100 125 150 Ohms/sq If=4.53mA
Diffusion Emitter N+RHO 3.0 4.5 6.0 Ohms/sq If=45.3mA
----------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "BUS"
----------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement
Method
----------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q1Beta 20 100 225 Gain Ic=1mA,
Vce=5.0V
Bjt NPN CBO Q1BVcbo 20 >20 N/A Volts If-10uA
Bjt NPN EBO Q1BVebo 6.7 8.0 8.3 Volts If=10uA
Bjt NPN CEO Q1LVceo 8.0 >8 N/A Volts If=10uA
Bjt Col to Col BV_iso 7.5 >7.5 N/A Volts If=5uA
----------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried Layer BLres1 30 45 100 Ohms If=10mA
Diffusion Narrow Base Narbase 1900 2500 2900 Ohms If=1mA
Diffusion Emitter EM-res 5.0 10 40 Ohms/sq If=10mA
----------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "CGS"
Table of Parameters not available on January 2, 1997.
Xxxxxxxxx Maine Fab 4100: "DRAM"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO MinLVCEO1 5.5 20 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO MinBVCBO 18 30 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO MinBVEBO 3.5 10 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta MinBeta1 75 200 Gain
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BaseRho 562 688 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Resistor RES-RHO 1800 2200 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxx 0000XXX 2048 via link 0 155 Ohms
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "DTCOMM
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q3Beta 80 180 250 Gain Ic-10mA, Vce=2.5V
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CBO Q3BVcbo 38 >38 N/A Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO Q3BVebo 5.5 6.3 7.0 Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO Q3LVceo 5.0 >5 N/A Volts If=5uA
--------------------------------------------------------------------------------------------------------------------------
Bjt Col to Col BV_ISO 15 >15 N/A Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried R_BL 15 23 30 Ohms If=50mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Narrow Base R_NB 1650 2100 2500 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Emitter R_EM 100 150 200 Ohms If=10mA
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "DTP"
-----------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
-----------------------------------------------------------------------------------------------------------------------
Bjt CEO Q1LVCEO 7 15 30 Volts
-----------------------------------------------------------------------------------------------------------------------
Bjt CBO Q1BVCBO 30 45 80 Volts
-----------------------------------------------------------------------------------------------------------------------
Bjt EBO Q1BVEBO 6 6.8 7.5 Volts
-----------------------------------------------------------------------------------------------------------------------
Bjt Beta Q1Beta 75 150 350 Gain
-----------------------------------------------------------------------------------------------------------------------
Bjt Schottky Q4VFD 0.26 0.32 0.4 Volts
-----------------------------------------------------------------------------------------------------------------------
Bjt Schottky XXXXX 00 00 00 Volts
-----------------------------------------------------------------------------------------------------------------------
Diffusion Base BaseRho 160 190 220 Ohms/sq.
-----------------------------------------------------------------------------------------------------------------------
Diffusion Collector BL-RES 75 110 135 Ohms
-----------------------------------------------------------------------------------------------------------------------
Diffusion Resistor IMP-RES 13K 16K 19K Ohms
-----------------------------------------------------------------------------------------------------------------------
Diffusion Emitter N+RHO 4.25 5 5.75 Ohms/sq.
-----------------------------------------------------------------------------------------------------------------------
Diffusion Resistor N-RES 1250 1525 1800 Ohms
-----------------------------------------------------------------------------------------------------------------------
Diffusion Sink SINK-RES 6 8.5 11 Ohms
-----------------------------------------------------------------------------------------------------------------------
Farichild Maine Fab 4100: "LAN"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta Q3BETA Ae=4.6 sq 70 140 300 Gain Ic=10mA, Vce=2.5V
mils
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO Q3BVCBO Ae=4.6 sq >20 43 N/A Volts If=100uA
mils
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO Q3LVCEO Ae=4.6 sq >10 20 N/A Volts If=5uA
mils
--------------------------------------------------------------------------------------------------------------------------
Diff Res R_EM(R12) 0.5X10 sq 150 210 270 Ohms If=10mA
--------------------------------------------------------------------------------------------------------------------------
Diff Res R_NB(R10) 0.3X10 sq 1600 2075 2550 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Impl Res RNI_RI4 0.5X10 sq 8000 10000 12000 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxx XXX000 0xx x 0xx 00 00 00 Ohms If=1mA
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "PTP"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN Beta Q3BETA 15 50 100 Gain Ic=1mA, Vce=5.0V
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CBO Q3BVCBO 10 35 100 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO Q3BVEBO 6.5 7 7.5 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO Q3LVCEO 7 35 60 Volts Ic=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt Col to Col BV_ISO 30 70 100 Volts I=5uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried BL_RES 90 115 140 Ohms I=10mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink(Plug) SINK_RES 2 12 30 Ohms I=10mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Emitter N+RHO 3.5 6 7 Ohms/sq I=4.53mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BASERHO 170 195 220 Ohms/sq I-4.53mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Narrow Base N-RES 1250 1625 2000 Ohms I-1mA
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "PTPCMOS"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP_SHORT -1.3 -0.85 -0.4 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Xxxx XXXXX_XXXXX -00 -00 0 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON_SHORT 0.4 0.65 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN_SHORT 18 39 60 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDP_5.0/5.0_SHORT -2 -1.5 -1 mAmps
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDN_5.0/5.0_SHORT 2 3.5 5 mAmps
--------------------------------------------------------------------------------------------------------------------------
Diffusion Xx Xx_XXX 0 0 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_RES 3 5 7 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_RES 30 55 80 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 0 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BV_GATE_OXIDE -200 -125 -50 Volts
Oxide
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "RTCCMOS"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP_SHORT -1.5 -0.875 -0.25 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Xxxx XXXXX_XXXXX -00 -00 0 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON_SHORT 0.3 0.65 1 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN_SHORT 18 39 60 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDP_5.0/5.0_SHORT -2 -1.3 -0.6 mApms
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDN_5.0/5.0_SHORT 3 4 5 mAmps
--------------------------------------------------------------------------------------------------------------------------
Diffusion Xx Xx_XXX 0 0 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_RES 4 6.5 9 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_RES 30 55 80 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BV_GATE_OXIDE -200 -125 -50 Volts
Oxide
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 5100: "GA20"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP2 -1 -0.8 -0.6 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdp BVDSSP2 -20 -13.09 -7 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON2 0.6 0.75 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSSN2 7 12 20 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSP2 -0.004 -0.003 -0.0012 mAmps
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSN2 0.0032 0.005 0.0072 mAmps
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTM1M2 0 0.07 0.15 Ohms/cnt
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTMP+ 1000 7500 20000 Ohms/cnt.
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTMN+ 1000 4000 10000 Ohms/cnt.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BVGOXP 20 24 30 Volts
Oxide
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BVGOXN -30 -26 -22 Volts
Oxide
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 5100: "ALS15"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Field vt FIELD_VT 10 25 40 Volts Id=1uA, Vg=Vd
--------------------------------------------------------------------------------------------------------------------------
Bjt PNP Beta BETA_Q7_50 6X7 Em, 3um 20 50 80 Gain Ic=50uA, Vce=2.5V
P+/P+
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN Beta LOP2B_20UA (5X32)X2 70 110 180 Gain Ic=20uA, Vce=2.0V
E-Stripes
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO 20K_EBO 20K 2X2 Em grid 4 5 15 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO AREA_CEO 500X500 Em 1 6 25 Volts Ic=10uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried BLR_RHO 50X50 20.5 23 27 Ohms/sq I=10mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink(Plug) SINK_RHO 48X48 13 16 20 Ohms/sq I=10mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_30X3 (L/W)30X3 1500 1650 1850 Ohms/sq V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_30X3 (L/W)30X3 150 175 200 Ohms/sq V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Schottky Vf VS_D5 1300 um sq 0.51 0.54 0.58 Volts Ib-300uA
(GRring)
--------------------------------------------------------------------------------------------------------------------------
Schottky Vr VR_D5 1300 um sq 18 25 35 Volts Ic-10uA
(XXxxx)
--------------------------------------------------------------------------------------------------------------------------
Via M2 Via RES_VIACHN 90 110 130 Ohms I=1mA
--------------------------------------------------------------------------------------------------------------------------
Via P-Contact PCON_RES 100 2X2 P+ 5000 6000 7000 Ohms I=100uA
Contacts
--------------------------------------------------------------------------------------------------------------------------
Via N-Contract NCON_RES 100 2X2 Sink 180 225 300 Ohms 1=100uA
Contacts
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1SNAKE 2500 2850 3200 Ohms V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 2 M2SNAKE 200 275 350 Ohms V-0.1V
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 5100: "CGSP/E"
Table of parameters to be defined.
Xxxxxxxxx Maine Fab 6001: "ABiC2L & ABiC2LM"
----------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
----------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTO_N840 W/L 40/0.8 0.6 0.75 0.9 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
----------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDS5N840 W/L 40/0.8 0.32 0.4 0.48 mA/um Vg=Vd=5.0V, Vb=Vs=GND
----------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN840 W/L 40/0.8 7 >7 Volts Vg=Vb=Vs=GND,
Id=1uA/um
----------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTO_P840 W/L 40/0.8 0.85 1 1.15 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
----------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDS5P840 W/L 40/0.8 0.16 0.2 0.24 mA/um Vg-Vd-5.0V, Vb=Vs=GND
----------------------------------------------------------------------------------------------------------------------------
MOS Bvdp BVDSP840 W/L 40/0.8 7 >7 Volts Vg=Vb=Vs=GND,
Id=1uA/um
----------------------------------------------------------------------------------------------------------------------------
Bjt CEO CEO_ECL (12-2X12)X2 6 >6 Volts Ic=500uA=1uA/um^2
E-Stripes
----------------------------------------------------------------------------------------------------------------------------
Bjt CBO CBO_ECL (12-2X12)X2 10 >10 Volts Ic=50uA=0.1uA/um^2
E-Stripes
----------------------------------------------------------------------------------------------------------------------------
Bjt EBO EBO_ECL (12-2X12)X2 5 >5 Volts Ie=50uA=0.1uA/um^2
E-Stripes
----------------------------------------------------------------------------------------------------------------------------
Bjt Vbe VBE_ECL (12-2X12)X2 0.75 0.8 0.85 Volts Ie-10mA Vcb-0v
E-Stripes (20uA/um^2)
----------------------------------------------------------------------------------------------------------------------------
Bjt Beta B2C_ECL (12-2X12)X2 50 90 200 Volts Ie=10mA, Vce=2.75v
E-Stripes (20uA/um^2)
----------------------------------------------------------------------------------------------------------------------------
Poly Resistor N+ V_POLYNP VDP 66 75 84 Ohms/sq. I=5mA
----------------------------------------------------------------------------------------------------------------------------
Poly Resistor P+ V_POLYPP VDP 238 270 320 Ohms/sq. I=5mA
----------------------------------------------------------------------------------------------------------------------------
Poly Resistor P- V_POLYPM VDP 1190 1400 1610 Ohms/sq. I=1mA
----------------------------------------------------------------------------------------------------------------------------
Silicide Silicided SILPPRHO VDP 1 2 3 Ohms/sq. I=5ma
P+ Poly
----------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried V_CUO VDP 23.8 32.2 Ohms/sq. I=5mA
Layer
----------------------------------------------------------------------------------------------------------------------------
Diffusion Sink SINKRHO 50X10 45 65 85 Ohms/sq. I=5mA, Calculated
ohms/sq.
----------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx XX_XXXXX 000 0 0 Xxxx/Xxxx I=100uA, Calculated
contacts ohms per link
----------------------------------------------------------------------------------------------------------------------------
Xxx X0 Xxx XX_XXXX 000 0 0 Xxxx/Xxxx I=1mA, Calculated
contacts ohms per link
----------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1_SNKT 18000 490 550 900 Ohms I-1mA, Chain
linear um Resistance
----------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 22LM M2_SNKT 18000 300 350 550 Ohms I=1mA, Chain
linear um Resistance
----------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXNWBV 90000 um^2 12 >12 Volts I=1uA
----------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 6001: "ABiC3L & ABiC4L"
Table of Parameters to be defined, because process development
is not yet complete.
Xxxxxxxxx Maine Fab 6001: "ABiC52L"
Table of Parameters to be defined, because process development
is not yet complete.
Xxxxxxxxx Maine Fab 6001: "BUS & CGS10"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON1 0.4 0.65 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp XXXX0 -0.00 -0.00 -0.00 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSP1 -0.014 -0.01 -0.005 mA
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSN1 0.015 0.022 0.029 mA
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSSN1 7 13 19 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO OUTLVCEO 4 5.7 20 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO OUTBVCBO 14 19 25 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO OUTBVEBO 3 4.5 5.5 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta OUTBETA 65 115 200 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Schottky VCSCHOTTKY 0.2 0.34 0.475 Volts
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BASERRES 2300 3200 3700 Ohms
--------------------------------------------------------------------------------------------------------------------------
Diffusion Buried Layer BLRHO 18 28 38 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink XXXXXXX 00 00 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTM1M2 0 0.04 0.075 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Contact N+ Contact CONTMN+ 10 30 60 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Contact P+ Contact CONTMP+ 10 25 40 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1CONT 0 85 200 Ohms
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 2 M2CONTWC 0 23 70 Ohms
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide BVGOXN -20 -15.5 -12.5 Volts
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide BVGOXP 11.5 13.5 20 Volts
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 6001: "CS080C"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn N5_VTO W/L 40/0.8 0.6 0.725 0.85 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat N5_IDSS W/L 40/0.8 13.6 16.8 20 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn N5_BVDSS W/L 40/0.8 10 13.5 17 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp P5_VTO X/X 00/0.0 -0.0 -0.00 -0.0 Volts Linear Extrapolation
(Vd=-0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat P5_IDSS X/X 00/0.0 -0.0 -0.0 -0.0 mA Vg-Vd-5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn P5_BVDSS W/L 40/0.8 -15 -12.5 -10 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1N_RES M1/N+ Chain 0 250000 500000 Ohms Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1P_RES M1/P+ Chain 0 300000 600000 Ohms Vf=-5.0v
--------------------------------------------------------------------------------------------------------------------------
Via M2 Xxx XXXXX_XXX Xxx Xxxxx 0 0000 00000 Xxxx Vf-5.0v
--------------------------------------------------------------------------------------------------------------------------
Diffusion N-Well RNW1_RES N- in 1000 2000 3000 Ohms Vf=1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion P-Well RPSUB2_RES P- in 70 110 150 Ohms Vf=-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion N+ RDIFFN1_RES N+ Diffusion 570 750 930 Ohms Vf=1v
in P-Well
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ RDIFFP1_RES P+ Diffusion 1260 1400 1580 Ohms Vf=-1v
in N-Well
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXN_BVD 99870um2 -22 -12 -10 Volts If=1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXP_BVD 99840um2 10 12 22 Volts If=1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 6001: "CS080CBI"
Table of parameters to be defined.
Fairchlid Maine Fab 6001: "CS080CBTX"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn N5_VTO W/L 40/0.8 0.6 0.725 0.85 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat N5_IDSS W/L 40/0.8 13.6 16.8 20 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn N5_BVDSS W/L 40/0.8 10 13.5 17 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp P5_VTO X/X 00/0.0 -0.0 -0.00 -0.0 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat P5_IDSS X/X 00/0.0 -0.0 -0.0 -0.0 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn P5_BVDSS W/L 40/0.8 -15 -12.5 -10 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1N_RES M1/N+ Chain 00 250000 500000 Ohms Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx XX0X_XXX X0Xx Chain 0 300000 600000 Ohms Vf=-5.0v
--------------------------------------------------------------------------------------------------------------------------
Via M2 Xxx XXXXX_XXX Xxx Xxxxx 0 0000 00000 Xxxx Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Diffusion N-Well RNW1_RES N-in 1000 2000 3000 Ohms Vf-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion P-Well RPSUB2_RES P-in 70 110 150 Ohms Vf=-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion N+ RDIFFN1_RES N+ 570 750 930 Ohms Vf-1v
Diffusion
in P-Well
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ RDIFFP1_RES P+ 1260 1400 1580 Ohms Vf=-1v
Diffusion
in N-Well
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXN_BVD 99870um2 -22 -12 -10 Volts If=-1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXP_BVD 99840um2 10 12 22 Volts If=1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base RBU Vander Pau 1100 1330 1550 Ohms/Sq Calculated Ohms/sq
--------------------------------------------------------------------------------------------------------------------------
Diffusion Buried Layer RBLU Vander Pau 23 29 35 Ohms/Sq Calculated Ohms/sq
--------------------------------------------------------------------------------------------------------------------------
BJT Beta NPN1_BF100U 2.24ux2.08um 35 70 115 Ie=100uA, Vce=1.0v
--------------------------------------------------------------------------------------------------------------------------
BJT CBO NPN1_BVCBO 2.24ux2.08um 10 16.8 20 Volts Ic=1uA, Vb=GND
--------------------------------------------------------------------------------------------------------------------------
BJT EBO NPN1_BVEBO 2.24ux2.08um 5.5 5.75 6.1 Volts Ie=1uA, Vb=GND
--------------------------------------------------------------------------------------------------------------------------
BJT CEO Q1_VCEO 2.24ux2.08um 5.5 7 10 Volts Ve=-100uA, Vc=GND
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 6001: "CS080CBIHY"
Table of Parameters to be defined, because process development
is not yet completed.
Fairchld Maine Fab 6001: "CS080CBIP
Table of Parameters to be defined, because process development
is not yet completed.
Xxxxxxxxx Maine Fab 6001: "CS080CBIVU"
Table of Parameters to be defined, because process development
is not yet completed.
EXHIBIT G
PRICES FOR WAFER SORT AND EPI PROCESSING
South Portland, Maine
Wafer Sort Cost [CONFIDENTIAL INFORMATION
OMITTED AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND [CONFIDENTIAL INFORMATION
FILED SEPARATELY WITH THE OMITTED AND FILED
SECURITIES AND EXCHANGE COMMISSION] SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND [CONFIDENTIAL INFORMATION
FILED SEPARATELY WITH THE OMITTED AND FILED
SECURITIES AND EXCHANGE COMMISSION] SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND [CONFIDENTIAL INFORMATION
FILED SEPARATELY WITH THE OMITTED AND FILED
SECURITIES AND EXCHANGE COMMISSION] SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE COMMISSION]
Penang, Malaysia
Wafer Sort Cost [CONFIDENTIAL
INFORMATION OMITTED AND FILED
SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION OMITTED
OMITTED AND FILED SEPARATELY AND FILED SEPARATELY WITH THE
WITH THE SECURITIES AND SECURITIES AND EXCHANGE
EXCHANGE COMMISSION] COMMISSION]
West Jordan, Utah
Wafer Sort Cost [CONFIDENTIAL
INFORMATION OMITTED AND FILED
SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION OMITTED
OMITTED AND FILED SEPARATELY AND FILED SEPARATELY WITH THE
WITH THE SECURITIES AND SECURITIES AND EXCHANGE
EXCHANGE COMMISSION] COMMISSION]
Non-recurring costs
[CONFIDENTIAL INFORMATION
OMITTED AND FILED SEPARATELY
WITH THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION OMITTED
OMITTED AND FILED SEPARATELY AND FILED SEPARATELY WITH THE
WITH THE SECURITIES AND SECURITIES AND EXCHANGE
EXCHANGE COMMISSION] COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION
OMITTED AND FILED SEPARATELY OMITTED AND FILED
WITH THE SECURITIES AND SEPARATELY WITH THE
EXCHANGE COMMISSION] SECURITIES AND EXCHANGE
COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION OMITTED
OMITTED AND FILED SEPARATELY AND FILED SEPARATELY WITH THE
WITH THE SECURITIES AND SECURITIES AND EXCHANGE
EXCHANGE COMMISSION] COMMISSION]
[CONFIDENTIAL INFORMATION [CONFIDENTIAL INFORMATION
OMITTED AND FILED SEPARATELY OMITTED AND FILED
WITH THE SECURITIES AND SEPARATELY WITH THE
EXCHANGE COMMISSION] SECURITIES AND EXCHANGE
COMMISSION]
Sort Operating Principles
XXXXXXXXX will load the South Portland, Maine, West Jordan, Utah and Penang,
Malaysia Wafer Sort facilities in a manner that minimizes the total costs to
NATIONAL, while generating the best possible yield control for NATIONAL
Products. This means that Penang will be the primary sorting site for those
Products which can be sorted there, unless otherwise instructed by NATIONAL.
on a case by case basis, XXXXXXXXX will provide NATIONAL the opportunity to
install NATIONAL's automatic test equipment within XXXXXXXXX'x Facilities, which
might be required to take advantage of XXXXXXXXX'x Integrated Yield Management
services. XXXXXXXXX will quote hourly rates for operations, maintenance and
support services, and NATIONAL will assume the costs of equipment depreciation,
spare parts, initial setup, probe cards, and electrical interface boards.
New sort hardware setups or Wafer sort for new Products
In the case of new hardware setups or Wafer sort for new Products, if the
hardware and/or test program is provided by National, Xxxxxxxxx will connect the
hardware and/or test program and attempt to sort wafers. If engineering problems
are found then Xxxxxxxxx will debug and solve the problems to the extent of its
capabilities utilizing Best Efforts.
Epitaxial Layer Processing
[CONFIDENTIAL INFORMATION OMITTED AND [CONFIDENTIAL INFORMATION
FILED SEPARATELY WITH THE SECURITIES OMITTED AND FILED SEPARATELY
AND EXCHANGE COMMISSION] WITH THE SECURITIES AND EXCHANGE
COMMISSION]
EXHIBIT J
OPERATIONAL SUPPORT SERVICES AND FEES
The following Operational Support Services can be provided by Xxxxxxxxx to
National for a fee. If no fee is stated it will be negotiated by the Parties at
a future date.
Production Control Management and Scheduling for National Product lines
Mask Making Services: Price
--------------------- -----
Prefracture Edits to Database [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
Reticle Generation [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
Database Fracture [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
Product Specific Test Pattern Modules [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
DRC Verification, up to 20 hours effort [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
for time in excess of 20 hours [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
Database Conversion and Boolean [CONFIDENTIAL INFORMATION OMITTED
Operations AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
for time in excess of 50 hours [CONFIDENTIAL INFORMATION OMITTED
AND FILED SEPARATELY WITH THE
SECURITIES AND EXCHANGE
COMMISSION]
Mathematical Modeling and
Characterization Services:
Price Per [CONFIDENTIAL Minimum
--------- -------
INFORMATION OMITTED AND [CONFIDENTIAL
FILED SEPARATELY WITH INFORMATION
THE SECURITIES AND OMITTED AND
EXCHANGE COMMISSION] FILED SEPARATELY
WITH THE
SECURITIES AND
EXCHANGE
COMMISSION]
Process Circuit Model File [CONFIDENTIAL [CONFIDENTIAL
Generation INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND
THE SECURITIES AND FILED SEPARATELY
EXCHANGE COMMISSION] WITH THE
SECURITIES AND
EXCHANGE
COMMISSION]
Analog Specific Parameter [CONFIDENTIAL [CONFIDENTIAL
Information INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND
THE SECURITIES AND FILED SEPARATELY
EXCHANGE COMMISSION] WITH THE
SECURITIES AND
EXCHANGE
COMMISSION]
Enhanced Electrical Testing [CONFIDENTIAL [CONFIDENTIAL
for New Designs INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND
THE SECURITIES AND FILED SEPARATELY
EXCHANGE COMMISSION] WITH THE
SECURITIES AND
EXCHANGE
COMMISSION]
Geom-Gen and Cadence Symbol [CONFIDENTIAL [CONFIDENTIAL
Generation INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND
THE SECURITIES AND FILED SEPARATELY
EXCHANGE COMMISSION] WITH THE
SECURITIES AND
EXCHANGE
OMMISSION]
Automatic Test Equipment
Development Services:
Price Per [CONFIDENTIAL Minimum
--------- -------
INFORMATION OMITTED AND
FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
MCT20xx Test Program Creation [CONFIDENTIAL [CONFIDENTIAL
INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND FILED
THE SECURITIES AND SEPARATELY WITH
EXCHANGE COMMISSION] THE SECURITIES
AND EXCHANGE
COMMISSION]
MCT20xx Custom Test Solution [CONFIDENTIAL INFORMATION OMITTED AND
Development FILED SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION]
Test Program Port to LTX [CONFIDENTIAL [CONFIDENTIAL
MicroMaster System INFORMATION OMITTED AND INFORMATION
FILED SEPARATELY WITH OMITTED AND FILED
THE SECURITIES AND SEPARATELY WITH
EXCHANGE COMMISSION] THE SECURITIES AND
EXCHANGE
COMMISSION]
Integrated Yield Management Services [CONFIDENTIAL INFORMATION OMITTED AND
FILED SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION]
Semiconductor Electrical Failure Analysis Services
Price Per hour
--------------
Capability (Unless otherwise stated)
----------
Device Analysis
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED
SEPARATELY WITH THE SECURITIES AND EXCHANGE
COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
Material Analysis
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
[CONFIDENTIAL INFORMATION OMITTED AND FILED [CONFIDENTIAL
SEPARATELY WITH THE SECURITIES AND EXCHANGE INFORMATION OMITTED AND
COMMISSION] FILED SEPARATELY WITH
THE SECURITIES AND
EXCHANGE COMMISSION]
Priority processing:
The standard charges above are for failure analysis completion within
[CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION] of receipt by Xxxxxxxxx.
Expedited analysis (move to the top of the queue) is available at a
[CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION] surcharge.
The Parties agree that the minimum charge for failure analysis will be
[CONFIDENTIAL INFORMATION OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND
EXCHANGE COMMISSION] per job (any combination of service) or [CONFIDENTIAL
INFORMATION OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND EXCHANGE
COMMISSION], whichever is greater.
Xxxxxxxxx may accept National analysis work from other non-Xxxxxxxxx wafer
facilities, based on workload and analysis complexity.
EXHIBIT K
CYCLE TIME AND EXPEDITED PROCESSING
HOT LOT CYCLE TIMES AND PRICING
Fiscal Year 1998 Wafer Processing Cycle Times (in Days)
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
West Jordan, Utah Fab:
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
CE80 XXX 00 00 00
XX00 XXX 55 39 26
CS100P 50 35 24
CS100HE2 60 42 28
CS08OSG 48 34 23
CS08OSG3 60 42 25
CS65SE 60 42 24
South Portland, Maine Fab:
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
CS80C 42 29 23
CS80CBTX 52 36 28
CS80CBI 52 36 28
ABiC IV 2LM 58 44 36
ABiC IV 4LM 70 51 42
Interface Xxxxxxx 00 00 00
Xxxxx Xxxx CMOS 13 10 8
National will be charged a premium per hot lot started as follows:
for Hot Lots, the premium will be $4,000. per lot
for Super Hot Lots, the premium will be $10,000. per lot
The standard lot sizes of 12 or 24 Wafers will apply.
EXHIBIT L
1. Prices for Wafers manufactured in the six-inch fab in South Portland,
Maine will be determined as follows. Shortly prior to the conclusion of
the first six (6) fiscal periods under this Agreement ("Fiscal Half"), the
Parties shall meet in order to determine new prices for the Second Fiscal
Half. At that meeting the Parties will review the manufacturing history
during such part of the First Fiscal Half for which such information shall
be available in order to determine Xxxxxxxxx'x actual manufacturing cost
base for that Wafer Module which shall be consistent with National's
standard cost accounting practices in effect as of the Effective Date,
(the "Class 1 Reference Cost Base"). If the Class 1 Reference Cost Base
plus a twenty-five percent (25%) markup, is less than the price applicable
for the first Fiscal Half, prices for the second Fiscal Half will be equal
to the Class 1 Reference Cost Base plus a twenty-five percent (25%)
markup. If Xxxxxxxxx'x actual costs have increased, the prices will remain
the same. Exhibit N sets forth the prices for Wafers to be manufactured in
the South Portland, Maine six-inch fab during the next twenty-seven (27)
fiscal periods of this Agreement based on the forecast volumes. For
different volumes, the prices may vary as set forth in the Revenue Side
Letter.
2. Prices for Wafers manufactured on the four and five-inch fabs in South
Portland, Maine and the West Jordan, Utah fab will be determined as
follows. Shortly prior to the conclusion of the first Fiscal Half, the
Parties shall meet in order to determine new prices for each of the
aforementioned Wafer Modules for the second Fiscal Half. At that meeting
the Parties will review the manufacturing history during such part of the
first Fiscal Half for which such information shall be available in order
to determine each Wafer Module's actual manufacturing cost base which
shall be consistent with National's standard cost accounting practices in
effect as of the Effective Date, (the "Reference Cost Base" per applicable
Wafer Module). For each Wafer Module, if the Reference Cost Base plus a
twenty-five percent (25%) markup is less than the price applicable for the
first Fiscal Half, prices for the second Fiscal Half for that Wafer Module
will be equal to its Reference Cost Base plus a twenty-five percent (25%)
markup. If Xxxxxxxxx'x actual costs have increased, the prices for Wafers
manufactured in that Wafer Module will remain the same as during the first
Fiscal Half.
The applicable Reference Cost Base and second Fiscal Half prices will
remain in effect for each of the aforementioned Wafer Modules for the
remaining term of this Agreement. Shortly prior to the conclusion of the
eighteenth (18th) fiscal period of this Agreement, and every six (6)
fiscal periods thereafter, the Parties shall meet in order to determine
Xxxxxxxxx'x actual manufacturing costs for the preceding Fiscal Half which
shall be consistent with National's standard cost accounting practices in
effect as of the Effective Date. If a Wafer Module's actual costs during
the previous Fiscal Half were lower than its Reference Cost Base, the
Parties shall calculate what National would have paid if such actual costs
had been used in originally setting the prices, rather than the applicable
Reference Cost Base. Xxxxxxxxx shall give National a credit equal to fifty
percent (50%) of the savings National would have realized if it had paid
the recalculated prices. No monies will be owing to or from National or to
or from Xxxxxxxxx if Xxxxxxxxx'x actual costs during
the preceding Fiscal Half were higher than the applicable Reference Cost
Base.
3. The prices for any Wafers or Equivalent Wafers purchased during a National
fiscal year in excess of the Forecast Volumes are set forth in Exhibit N.
4. If National does not place orders for Wafers or Equivalent Wafers in
accordance with the Forecast Volumes during any National fiscal year, the
provisions of the Revenue Side Letter will apply with respect to the
manner in which National will discharge its commitment to Xxxxxxxxx for
that fiscal year.
5. Pricing for any extension and/or ramp-down period beyond the first
thirty-nine (39) fiscal periods of this Agreement will be negotiated in
good faith by the Parties.
Exhibit M
04-97
----- Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 4.3 1.00 4.3 14.7% 1.9
CS80CBTX 9.6 1.27 12.2 41.7% 5.4
CS80C81 0.7 1.46 1.0 3.5% 0.5
ABIC 1.9 1.65 3.1 10.7% 1.4
Total NBC 15.5 20.6 70.6% 9.2
FSC 8.6 1.00 8.6 29.4% 3.8
Total 6" Fab 25. 29.2 100.0% 13.0
FY98
----
CS080C 24.6 1.00 24.6 24.6% 13.2
CS80CBTX 20.0 1.27 25.4 25.4% 13.6
CS80CBI 3.9 1.45 5.7 5.6% 3.0
ABIC 8.3 1.65 13.7 13.7% 7.3
Total NSC 56.8 69.4 69.2% 37.1
FSC 30.8 1.00 30.8 30.8% 16.5
Total 6" Fab 87.5 100.2 100.0% 53.6
FY99
---- Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 0.0 1.00 0.0 0.05% 0.0
CS80CBTX 6.0 1.27 7.6 6.7% 3.6
CS80CBI 16.5 1.45 23.9 21.2% 11.4
ABIC 23.5 1.54 38.8 34.3% 18.4
Total NSC 46.0 70.3 62.3% 33.4
FSC 42.6 1.00 42.6 37.7% 20.2
Total 6" Fab 88.6 112.9 100.0% 53.6
FY00
---- Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 0.0 1.00 0.0 0.0% 0.0
CS80CBTX 0.0 1.27 0.0 0.0% 0.0
CS80CBI 20.1 1.45 29.1 23.5% 12.6
ABIC 27.4 1.65 45.2 36.4% 19.5
Total NSC 47.5 74.4 59.9% 32.1
FSC 49.8 1.00 49.8 40.1% 21.5
Total 6" Fab 97.3 124.2 100.0% 53.6
Exhibit N
--------------------------------------------------------------------------------------------------------
FY97 FY98 FY99 FY00
---------------------------------------------------------------------------------------------------
Q4 Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year
--------------------------------------------------------------------------------------------------------
South
Portland
--------
Includes
EPI where
applicable
------ ------ ------
BCT1.0 Price 1,008 1,008 1,008 1,008 1,008 1,008 892 892 892 892 892 791 791 791 791 791
Starts 0.6 -- -- --
Revenue 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
CS80C Price 1,008 1,008 1,008 1,008 1,008 1,008 892 892 892 892 892 791 791 791 791 791
Starts 3.7 6.4 5.9 6.4 5.9 24.6 -- --
Revenue 3.5 5.9 5.5 5.9 5.5 22.8 -- -- -- -- -- -- -- -- -- --
CS80CBTX Price 1,252 1,252 1,252 1,252 1,252 1,252 1,106 1,106 1,106 1,106 1,106 977 977 977 977 977
Starts 9.6 6.1 3.9 6.0 3.9 19.9 1.2 1.5 1.7 1.6 6.0 --
Revenue 10.8 6.9 4.4 6.8 4.4 22.4 1.2 1.5 1.7 1.6 6.0 -- -- -- -- --
CS809CBi Price 1,416 1,416 1,416 1,416 1,416 1,416 1,247 1,247 1,247 1,247 1,247 1,100 1,100 1,100 1,100 1,100
Starts 0.7 0.9 1.0 1.0 1.0 3.9 4.1 4.1 4.1 4.2 16.5 5.0 5.0 5.0 5.0 20.1
Revenue 0.9 1.1 1.3 1.3 1.3 5.0 4.6 4.6 4.6 4.7 18.5 5.0 5.0 5.0 5.0 19.9
ABiC 2LM Price 1,597 1,597 1,597 1,597 1,597 1,597 1,405 1,405 1,405 1,405 1,405 1,239 1,239 1,239 1,239 1,239
Starts 1.9 2.0 2.1 2.0 2.1 8.2 4.6 5.5 6.2 7.2 23.5 6.9 6.9 6.9 6.9 27.6
Revenue 2.7 2.8 3.0 2.8 3.0 11.7 5.8 6.9 7.8 9.0 29.4 7.6 7.6 7.6 7.6 30.4
ABiC 4LM Price 2,010 2,010 2,010 2,010 2,010 2,010 1,778 1,778 1,778 1,778 1,778 1,576 1,576 1,576 1,576 1,576
Starts 2.0 -- -- --
Revenue 0.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
TOTAL
Class 1 ASP 1,250 1,212 1,217 1,213 1,217 1,214 1,296 1,298 1,301 1,309 1,301 1,172 1,172 1,172 1,172 1,172
Starts 16.7 15.4 12.9 15.4 12.9 56.6 9.9 11.1 12.0 13.0 46.0 11.9 11.9 11.9 11.9 47.7
Revenue 18.8 16.8 14.1 16.8 14.1 61.9 11.5 13.0 14.0 15.3 53.9 12.6 12.6 12.6 12.6 50.3
Comm'l 4100 Price/4" 143 413 143 143 143 143 143 143 143 143 143 143 143 143 143 143
4" 36.5 36.5 36.5 36.5 36.5 145.9 30.9 30.9 30.9 30.9 123.7 26.2 26.2 26.2 26.2 104.7
Starts
6" equiv 16.2 16.2 16.2 16.2 16.2 64.8 13.7 13.7 13.7 13.7 55.0 11.6 11.6 11.6 11.6 46.5
Revenue 5.0 5.0 5.0 5.0 5.0 19.8 4.2 4.2 4.2 4.2 16.8 3.6 3.6 3.6 3.6 14.2
Comm'l 5100 Price/5" 222 222 222 222 222 222 222 222 222 222 222 222 222 222 222 222
5" 0.7 0.2 0.2 0.2 0.2 0.9 0.2 0.2 0.2 0.2 0.7 0.1 0.1 0.1 0.1 0.6
Starts
6" equiv 0.5 0.2 0.2 0.2 0.2 0.6 0.1 0.1 0.1 0.1 0.5 0.1 0.1 0.1 0.1 0.4
Revenue 0.1 0.0 0.0 0.0 0.0 0.2 0.0 0.0 0.0 0.0 0.2 0.0 0.0 0.0 0.0 0.1
Subtotal FM 6" 33.4 31.8 29.3 31.8 39.2 122.0 23.8 25.0 25.9 26.9 101.5 23.7 23.7 23.7 23.7 94.6
fabs Starts
Revenue 23.9 21.8 19.1 21.8 19.1 81.9 15.8 17.2 18.3 19.5 70.8 16.2 16.2 16.2 16.2 64.7
TE-EPI Price 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46
Starts 25.8 19.8 19.8 19.8 19.8 79.2 4.0 4.0 4.0 4.0 16.0 1.0 1.0 1.0 1.0 4.0
Revenue 1.2 0.9 0.9 0.9 0.9 3.6 0.2 0.2 0.2 0.2 0.7 0.0 0.0 0.0 0.0 0.2
------ ------ ------
Exhibit N
-----------------------------------------------------------------------------------------------------
FY97 FY98 FY99 FY00
-----------------------------------------------------------------------------------------------
Q4 Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year
-----------------------------------------------------------------------------------------------------
Salt Lake
------ ------ ------
CS100E2 Price 848 848 848 848 848 848 797 797 797 797 797 749 749 749 749 749
Starts 1.3 2.1 2.1 2.1 2.1 8.5 1.2 1.2 1.2 1.2 4.7 -- -- -- -- --
Revenue 1.0 1.7 1.7 1.7 1.7 6.6 0.9 0.9 0.9 0.9 3.5 -- -- -- -- --
CE130 Price 627 627 627 627 627 627 589 589 589 589 589 554 554 554 554 554
Starts 0.9 -- -- -- -- -- -- -- -- -- -- --
Revenue 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
CE80 Price 669 669 669 669 669 669 628 628 628 628 628 591 591 591 591 591
Starts 1.3 2.4 2.4 2.4 2.4 9.6 0.6 0.6 0.6 0.6 2.2 -- -- -- -- --
Revenue 0.8 1.5 1.5 15. 1.5 1.5 5.9 0.3 0.3 0.3 1.3 -- -- -- -- --
CS80SG Price 1,789 1,789 1,789 1,789 1,789 1,789 1,682 1,682 1,682 1,682 1,682 1,581 1,581 1,581 1,581 1,581
Starts 0.1 0.1 0.1 0.1 0.1 0.4 -- -- -- -- -- -- -- -- -- --
Revenue 0.2 0.2 0.2 0.2 0.2 0.7 -- -- -- -- -- -- -- -- -- --
CS65 Price 2,141 2,141 2,141 2,141 2,141 2,141 2,013 2,013 2,013 2,013 2,013 1,892 1,892 1,892 1,892 1,892
Starts -- 0.3 0.3 0.3 0.3 1.0 0.0 0.0 0.0 0.0 0.1 -- -- -- -- --
Revenue -- 0.5 0.5 0.5 0.5 2.0 0.1 0.1 0.1 0.1 0.2 -- -- -- -- --
CE80DLM Price 755 755 755 7557 755 755 710 710 710 710 710 667 667 667 667 667
Starts
Revenue
TOTAL SL Revenue 773 864 864 864 864 864 782 782 782 782 782 n/a n/a n/a n/a n/a
Starts 3.5 4.9 4.9 4.9 4.9 19.5 1.8 1.8 1.8 1.8 7.0 -- -- -- -- --
Revenue 2.4 3.8 3.8 3.8 3.8 15.2 1.2 1.2 1.2 1.2 5.0 -- -- -- -- --
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Prices for incremental volumes above the forecasted volumes will be priced
per table:
South Portland 4" commercial $ 70
5" commercial $110
6" fab
ABiC2LM $825
CS80CBTX $635
CS80CBI $705
CS80C $500
BCT1.0 $705
ABiC4LM $1,000
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EXHIBIT O
PRINCIPLES OF MANUFACTURING
(Degree) Forecasted volumes will be supplied covering all aspects of activity
for 3 years.
(Degree) National will meet a Revenue commitment of $330m over 3 years and 3
months, effective the day of closing of the purchase agreement.
(Degree) Price will be fixed for the first 6 months. Pricing will reflect
National's full absorption of the fixed cost based on its percent
utilization of the Xxxxx Xxxxxxxx, Xxxxx 0" facility (i.e., this
incorporates the agreed equivalency factors).
(Degree) Principles will be set to establish pricing for the second 6 months.
(Degree) Cost base for FM Class 1 will be Q4 Forecast FY97 with a fully
capitalized base.
(Degree) National will pay a xxxx up of 25% in the first 12 months.
(Degree) For Class 1 the pricing after the initial 12 months is targeted to
decline 12% or better given equal loadings in each subsequent interval.
If the volume is greater price reduction will be increased accordingly.
(Degree) Incremental volumes above the forecast volumes will be priced per
table:
4" = $ 70
5" = $110
6" ABIC $825
CBTX $635
CBI $705
CS80 $500
(Degree) Available incremental capacity will be at the same rate as the base.
(Degree) Pricing activity beyond Fiscal Year 00
- In case the Parties are unable to agree on prices for the following
year, the prices used in the previous year will remain in effect,
and the Parties will be allowed to reduce the capacity commitment
each quarter by a quantity of 20%, starting one quarter after the
price agreements expire. A notice shall be given 90 days prior to
any capacity reduction.
(Degree) For the Class 100 and the Penang Assembly and Test Facilities the price
after the initial 12 months commitment will be at cost plus 25%. If the
actual cost is better than the agreed upon base a credit will be given
to National in the subsequent Fiscal Half equal to 50% of the savings.
If the cost is greater than the agreed upon base, the price will be at
the agreed upon base.
