EXHIBIT 10.03
FAIRCHILD FOUNDRY SERVICES AGREEMENT
THIS FAIRCHILD FOUNDRY SERVICES AGREEMENT ("Agreement") is dated and
made effective this 11th day of March, 1997 (the "Effective Date") by and
between NATIONAL SEMICONDUCTOR CORPORATION, a Delaware corporation, having its
principal place of business at 0000 Xxxxxxxxxxxxx Xxxxx, Xxxxx Xxxxx, Xxxxxxxxxx
00000-0000 ("National") and XXXXXXXXX SEMICONDUCTOR CORPORATION, a Delaware
corporation, having its principal place of business at 000 Xxxxxxx Xxxxxx, Xxxxx
Xxxxxxxx, Xxxxx 00000 ("Fairchild"). National and/or Fairchild may be referred
to herein as a "Party" or the "Parties" as the case may require.
WITNESSETH:
WHEREAS, the Parties have entered into a certain Asset Purchase
Agreement (hereinafter referred to as the "Purchase Agreement") under which
Fairchild is acquiring certain of the assets of National's Logic, Memory and
Discrete Power and Signal Technologies Business Units as historically conducted
and accounted for (including Flash Memory, but excluding Public Networks,
Programmable Products and Mil/Aero Logic Products) (the "Business"); and
WHEREAS, pursuant to the transactions contemplated in the Purchase
Agreement, Fairchild is acquiring National's manufacturing facilities in South
Portland, Maine (excluding the eight-inch fab and related facilities); West
Jordan, Utah; and Penang, Malaysia, and Cebu, the Philippines; and
WHEREAS, after the closing of the transactions contemplated by the
Purchase Agreement Fairchild will own and operate the Facilities; and
WHEREAS, National, using proprietary processes, has been
manufacturing silicon wafers containing certain integrated circuits at the
Facilities; and
WHEREAS, National is conveying to Fairchild certain intellectual
property rights pursuant to the Technology Licensing and Transfer Agreement
between National and Fairchild, of even date herewith; and
WHEREAS, National and Fairchild desire to enter into an agreement
under which Fairchild will continue to provide certain manufacturing services to
National following the closing of the transactions contemplated by the Purchase
Agreement; and
WHEREAS, National and Fairchild recognize that the prices National
shall pay to Fairchild for silicon wafers manu-
factured pursuant to this Agreement are determined based on the collateral
transactions and ongoing relationship between the Parties as expressed in the
Purchase Agreement, Revenue Side Letter between National and Fairchild of even
date herewith (the "Revenue Side Letter") and the other Operating Agreements (as
defined in Paragraph 7.1); and
WHEREAS, the execution and delivery of this Agreement is a condition
precedent to the closing of the transactions contemplated by the Purchase
Agreement.
NOW, THEREFORE, in furtherance of the foregoing premises and in
consideration of the mutual covenants and obligations hereinafter set forth, the
Parties hereto, intending to be legally bound hereby, do agree as follows:
1.0 DEFINITIONS
1.1 "Acceptance Criteria" shall mean the electrical parameter testing,
process control monitor ("PCM") and other inspections for each
Product and/or Process as set forth in Exhibit F hereto, all of
which are to be performed by Fairchild prior to shipment of Wafers
hereunder.
1.2 "Best Efforts" shall require that the obligated Party make a
diligent, reasonable and good faith effort to accomplish the
applicable objective. Such obligation, however, does not require any
material expenditure of funds or the incurrence of any material
liability on the part of the obligated Party, which expenditure or
liability is unreasonable in light of the related objective, nor
does it require that the obligated Party act in a manner which would
otherwise be contrary to prudent business judgment or normal
commercial practices in order to accomplish the objective. The fact
that the objective is not actually accomplished is no indication
that the obligated Party did not in fact utilize its Best Efforts in
attempting to accomplish the objective.
1.3 "Confidential Information" shall have the meaning set forth in
Paragraph 16.1 below.
1.4 "Effective Date" shall mean the date first set forth above.
1.5 "Equivalent Wafers" for wafers manufactured at the South Portland,
Maine six inch fab shall mean the
-2-
actual number of wafers in a given Process multiplied by the process
complexity factor for that Process, as set forth in Exhibit A
hereto; and for wafers manufactured in a four or five inch fab,
Equivalent Wafers shall mean the number of six inch equivalent
wafers.
1.6 "Facilities" shall mean the existing wafer fabrication facilities
located at South Portland, Maine (excluding the eight inch
fabrication facility of which National is retaining ownership) and
West Jordan, Utah, transferred to Fairchild from National pursuant
to the Purchase Agreement.
1.7 "Fairchild" shall mean Xxxxxxxxx Semiconductor Corporation and its
Subsidiaries.
1.8 "Fairchild Assured Capacity" shall mean the capacity that Fairchild
agrees to supply National pursuant to Section 5 below.
1.9 "Masks" shall mean the masks and reticle sets, including the mask
holders and ASM pods, for the Products and Wafers used to
manufacture Products hereunder.
1.10 "National" shall mean National Semiconductor Corporation and its
Subsidiaries.
1.11 "Processes" shall mean those National proprietary wafer
manufacturing processes and associated unit processes to be used in
the fabrication of Wafers hereunder which are set forth in Exhibit A
hereto, as such processes shall be modified from time to time as
agreed in writing by the Parties.
1.12 "Products" shall mean National's integrated circuit products which
will be manufactured by Fairchild in wafer form for National
hereunder and which are identified by National's part numbers listed
in Exhibit B hereto, which exhibit may be amended from time to time
as the parties may agree.
1.13 "Quality and Reliability Criteria" shall mean National's
manufacturing process quality and reliability specifications, as set
forth in the revision of National Specification CP0008 which is in
effect as of the Effective Date, and which are to be followed by
Fairchild in manufacturing Wafers hereunder.
1.14 "Specifications" shall mean the technical specifica-
-3-
tions (such as Mask ID, Process Flow and Sort/Test) as listed in
Exhibit B for each of the Products as provided in this Agreement.
1.15 "Subsidiary" shall mean any corporation, partnership, joint venture
or similar entity more than fifty (50%) owned or controlled by a
Party hereto, provided that any such entity shall no longer be
deemed a Subsidiary after such ownership or control ceases to exist.
1.16 "Technology Licensing and Transfer Agreement" shall mean the
agreement of even date herewith between the Parties under which
National is licensing and transferring certain intellectual property
rights to Fairchild.
1.17 "Wafers" shall mean four-inch (4"), five-inch (5") and/or six-inch
(6") silicon wafers for any of the Products to be manufactured by
Fairchild hereunder.
1.18 "Wafer Module" shall mean the Xxxxxxxxx four-inch (4"), five-inch
(5"), and six-inch (6") wafer fabrication units in South Portland,
Maine and the six-inch (6") wafer fabrication unit in West Jordan,
Utah.
2.0 INTELLECTUAL PROPERTY/NON-COMPETE
2.1 The provisions of the Technology Licensing and Transfer Agreement
will govern all issues related to the respective intellectual
property rights of the Parties hereunder, to include but not be
limited to, use rights, ownership rights and indemnification
obligations.
2.2 All manufacturing of Wafers shall take place at the Facilities.
Fairchild shall not transfer any National-owned intellectual
property or technical information outside of the Facilities or to
any other site, other than as may be permitted under the Technology
Licensing and Transfer Agreement.
2.3 During the term of this Agreement, including all extensions hereto
and any subsequent ramp-down period provided under Paragraph 15.1,
Fairchild will not develop, manufacture (except for National
hereunder), market or sell any integrated circuit that has
substantially the same specifications as any Product.
-4-
3.0 PROCESSES
3.1 Exhibit A lists the Processes which Fairchild shall use in
manufacturing Wafers hereunder for National. Exhibit A may be
amended from time to time by mutual agreement in writing of the
Parties, as new processes are developed and older Processes become
obsolete.
3.2 After qualification is successfully completed for any Product to be
manufactured under this Agreement, if Fairchild desires to make
material Process changes affecting form, fit or function, Fairchild
will notify National of the intended change in accordance with
Xxxxxxxxx'x process change procedures then in effect. If the
proposed changes are unacceptable to National, National and
Fairchild shall work together in efforts to resolve the problem and
qualify the changed Process for making Wafers. If during the first
thirty-nine (39) fiscal periods of this Agreement the Parties are
unable to resolve the problem, Fairchild shall continue to run the
unmodified Process to supply Wafers pursuant to this Agreement.
After the first 39 fiscal periods of this Agreement, if the Parties
are unable to resolve the problem, Fairchild shall have the right to
make such Process changes upon the provision of ninety (90) days
prior written notice to National.
3.3 Should Fairchild elect to discontinue a Process, it must give
National written notice of no less than twenty-four (24) fiscal
periods prior to the date it intends to discontinue any Process in
the ABiC family and written notice of no less than twelve (12)
fiscal periods for any other Process, or its future amended form. In
no event, however may Fairchild discontinue any Process during the
first thirty-nine (39) fiscal periods of this Agreement unless
National agrees. Subsequent to Xxxxxxxxx'x notice of Process
discontinuance, Fairchild will make provisions with National for
Last Time Buys, and commit to ship all Wafers requested in such Last
Time Buys as the Parties may negotiate.
If Fairchild is unable to deliver Wafers due to a Process
discontinuance during any ramp down phase occurring after the first
39 fiscal periods, then any ramp-down revenue obligations of
National associated with Wafers to be manufactured under that
Process will be discharged in full.
-5-
3.4 National shall have the right, in its sole discretion, to establish
an alternative source of manufacturing for any Process. In support
of any Process transfer required to establish such alternate source,
Fairchild shall make available to National process characterization
data, where such data exists at the time of such request, and all
applicable manufacturing specifications, including run cards and
complete unit process specifications for the Processes. In further
support of such transfer, National may contract with Fairchild, at a
cost to be negotiated, for up to thirteen (13) man weeks of
engineering services. If such services are required away from the
Facilities, National shall also pay reasonable travel and per diem
expenses for the Fairchild engineers providing such services.
3.5 There are currently a number of Processes under development at the
Facilities. Attached as Exhibit C hereto is a listing of said
Processes, the timetable and milestones to completion for each and
the funding which National shall pay Fairchild for such development
services. Fairchild will utilize its Best Efforts to complete all
development work successfully in accordance with Exhibit C. National
may terminate such development services prior to completion thereof
only after three (3) months prior written notice to Fairchild. The
rights of the Parties to any intellectual property resulting from
such development work shall be governed by the terms of the
Technology Transfer and License Agreement.
4.0 EXISTING PRODUCTS; SET UP AND QUALIFICATION OF NEW PRODUCTS; MODIFICATION OF
EXISTING PRODUCTS
4.1 For each new Product that National proposes to have Fairchild
manufacture, National will provide to Fairchild in advance the
Specifications and design layout of the Product for review and
comment by Fairchild. The Parties will also agree on the Acceptance
Criteria, including electrical test parameters, and Quality and
Reliability Criteria for the prototype Wafers to be manufactured for
the new Product during the qualification process.
4.2 An initial data base for Mask generation or pattern generation, or
acceptable production Masks will be provided by National to
Fairchild, per Fairchild specifications for large die, at National's
expense, for each new Product to be fabricated for National.
-6-
In the alternative, National may provide Fairchild with prime die
design data and Fairchild will provide the frame and fracture
services and procure the Mask set at National's expense. After
receipt of the initial data base, or pattern generation tape, or
master or sub-master Mask set, additional and/or replacement Mask
sets shall be the responsibility and expense of Fairchild. All such
data bases, pattern generation tapes and Mask sets shall be the
property of National, regardless of whether they were initially
supplied by National or replaced by Fairchild.
4.3 As soon as practical following agreement on the items in Paragraph
4.1 above, and following receipt of a written purchase order from
National, Fairchild will begin manufacture of twelve (12) prototype
Wafers for such Product as is specified in the purchase order.
Fairchild will perform the electrical testing specified in the
initial Acceptance Criteria and supply the test data to National
with the prototype Wafers. Xxxxxxxxx'x obligation shall be limited
to providing Wafers that meet the applicable PCM specifications and
the associated test data. National will promptly inspect the
prototype Wafers and notify Fairchild in writing of the results. If
the prototype Wafers do not meet the Acceptance Criteria and Quality
and Reliability Criteria, the Parties will cooperate in good faith
to determine the reason for such failure.
4.4 In connection with the completion of the qualification process for
any new Product, National will deliver to Fairchild final
Specifications for the Product incorporating any changes agreed in
writing by the Parties during the qualification process. The Parties
will also negotiate for each Product the final Acceptance Criteria
and Quality and Reliability Criteria to be used for the commercial
production lots of Wafers.
4.5 Unless otherwise agreed in writing, production quantities of Wafers
of a new Product will not be manufactured prior to completion of the
qualification process under this Section 4. In the event that
National desires for Fairchild to manufacture production quantities,
the Parties will agree in writing on the terms before Fairchild
accepts the purchase order.
4.6 If either National or Fairchild desires to make any
-7-
changes to the final Specifications, Acceptance Criteria or Quality
and Reliability Criteria for any existing Product, that Party shall
notify the other Party in writing and negotiate the changes in good
faith, including any changes in prices required by such
modifications. A modification to any of the foregoing will be
binding only when a writing to which such modification is attached
has been signed by both Parties as provided in this Agreement. The
Parties will separately negotiate the price and terms of any
prototype Wafers required in connection with such change.
4.7 Fairchild may at its discretion declare a Product obsolete if such
Product has not been run in production for a minimum of six (6)
fiscal periods. Fairchild must provide National with twelve (12)
months prior written notice of an obsolescence declaration and make
reasonable provisions with National for a Last Time Buy for such
Product. Within thirty (30) days after completing production of
National's Last Time Buy, Fairchild shall return all data bases and
Masks for such Product to National.
5.0 CAPACITY; VOLUME COMMITMENTS; PRODUCTION PLANNING
5.1 All planning herein will be done under National's accounting
calendar which currently divides its fiscal year into four (4) equal
fiscal quarters, each of which consists of three (3) fiscal periods.
The first two (2) periods of each quarter are of four (4) weeks in
duration and the third period is of five (5) weeks duration.
5.2 Two (2) weeks prior to the end of each National fiscal period
National will provide in writing to Fairchild a baseline quantity of
Wafers, set forth in terms of Wafer starts per Wafer Module, for the
next eight (8) fiscal periods (the "Capacity Request"). For the
South Portland, Maine facility the Capacity Request shall clearly
state each Wafer in terms of 6" Equivalent Wafers. Equivalency
factors are set forth in Exhibit A. For the West Jordan, Utah
facility the Capacity Request shall be stated in terms of the
Process required to manufacture the Wafers. National's initial
Capacity Request and Xxxxxxxxx'x Assured Capacity response formats
are set forth in Exhibit D.
-8-
5.3 Each fiscal period National may change the Capacity Request in
accordance with the following table, provided that the maximum
Capacity Request for each Wafer Module does not exceed National's
share of each Wafer Module's installed equipment capacity as
provided herein. Any changes outside those permitted under the
following table must be by written agreement of the Parties.
Fiscal Periods in
the Capacity Request Permitted Changes
-------------------- -----------------
Period 1 Fixed
Period 2 +/-10%
Period 3 +/-15%
Period 4 +/-20%
Period 5 +/-25%
Period 6 +/-30%
Period 7 +/-35%
Period 8 +/-40%
5.4 National's share of a Wafer Module's installed equipment capacity
will equal the previous Fairchild Assured Capacity for that Wafer
Module, plus that percentage of any excess capacity available in the
Wafer Module equal to National's percentage of the currently
utilized capacity in said Wafer Module. Installed equipment capacity
by Wafer Module in South Portland, Maine is set forth below:
Wafer Module Annual Capacity
------------ ---------------
FM Class 1 6" 133,000 Equivalent Wafer
starts
FM Class 100 4" 180,000 Wafer starts
(6" equivalent)
FM Class 100 5" 110,000 Wafer starts
(6" equivalent)
As no excess capacity exists in West Jordan, Utah, Xxxxxxxxx hereby
commits the following capacities to National for each National
fiscal year:
FY 1998 19,400 Wafer starts
FY 1999 7,000 Wafer starts
FY 2000 0 Wafer starts
5.5 One (1) work week after receipt of the Capacity Request, Fairchild
shall provide National with a response to such Capacity Request, the
"Fairchild As-
-9-
sured Capacity". The Fairchild Assured Capacity must guarantee the
amount requested in National's latest Capacity Request, provided
that any changes to National's latest Capacity Request are within
the limits of Paragraph 5.3. Fairchild shall utilize its Best
Efforts to comply with any requests by National for capacity above
those which are permitted under Paragraph 5.3. In any case,
Fairchild shall be obligated hereunder to provide National with the
Wafer starts guaranteed in the Fairchild Assured Capacity response.
The initial Fairchild Assured Capacity response will be the last one
provided prior to the Effective Date. Set forth below are two
examples of the foregoing:
Example #1 The new Capacity Request is less than the last
Fairchild Assured Capacity response.
Period A B C D E F G H
------ - - - - - - - -
Last Capacity Request 100 100100 100100 100100 100
Last Fairchild Assured Capacity 100 100100 100100 100100 100
New Capacity Request 100 90 85 80 75 70 65 65
New Fairchild Assured Capacity 100 90 85 80 75 70 65 65
Example #2 The new Capacity Request is greater than the last
Fairchild Assured Capacity response.
Period A B C D E F G H
------ - - - - - - - -
Last Capacity Request 100 100100 100100 100100 100
Last Fairchild Assured Capacity 100 100100 100100 100100 100
New Capacity Request 100 110115 120125 130135 135
New Fairchild Assured Capacity 100 110115 120125 130135 135
5.6 The timetable for the rolling eight fiscal period Capacity Request,
the Fairchild Assured Capacity response, purchase order release and
detailed device level Wafer starts request for the next fiscal
period are set forth in Exhibit D hereto.
6.0 PURCHASE ORDERS
6.1 All purchases and sales between Fairchild and National shall be
initiated by National's issuance of written purchase orders sent by
either first class mail or facsimile. By written agreement of the
Parties, purchase orders may also be sent and acknowledged by
electronic data exchange or other mutually satisfactory system. Such
"blanket" purchase orders shall be issued once per fiscal
-10-
quarter for Wafers to be delivered three (3) fiscal periods in the
future. They shall state the Wafer quantities (specifying whether
equivalents or actual) by Wafer Module, and shipping and invoicing
instructions. Fairchild shall accept purchase orders through a
written or electronic acknowledgment. Within a reasonable time after
receipt of National's detailed device level Wafer starts request for
the next fiscal period, Fairchild shall provide National with a
Product delivery schedule either on a weekly basis as the Wafers are
started or for the Wafer starts for the entire fiscal period, as the
parties may agree in writing. The purchase orders may utilize the
first three (3) fiscal periods forecast in the eight period rolling
forecast supplied pursuant to Section 5, as the embodiment of the
purchase order for specifying the Wafer quantity by Wafer Module and
Process, and whether sorted or unsorted.
6.2 In the event of any conflict between the terms and conditions of
this Agreement and either Party's purchase order, acknowledgment, or
similar forms, priority shall be determined as follows:
(a) typewritten or handwritten terms on the face of a written
purchase order, acknowledgment or similar document or in the
main body of an electronic equivalent which have been
specifically accepted in writing by the other Party's Program
Manager;
(b) the terms of this Agreement;
(c) preprinted terms incorporated in the purchase order,
acknowledgment or similar document.
6.3 Consistent with standard practices of issuing specific device level
details of part numbers to be fabricated on a weekly or periodic
basis, National may unilaterally change the part number to be
manufactured, provided that Fairchild agrees that the change does
not negatively impact Xxxxxxxxx'x loadings and provided further that
there is no change in the Process flow to be used. A change that
will negatively impact loading or alter the Process flow may only be
directed upon Xxxxxxxxx'x written agreement, which shall utilize its
Best Efforts to comply with such requested change. The specific part
number detail shall be submitted by first
-11-
class mail or facsimile. By written agreement of the Parties,
specific part number detail may also be sent by electronic data
exchange, or other mutually satisfactory system.
6.4 National shall request delivery dates which are consistent with
Xxxxxxxxx'x reasonable lead times for each Product as indicated at
the time National's purchase order is placed. Notwithstanding the
foregoing, Fairchild shall utilize its Best Efforts to accommodate
requests by National for quick turnarounds or "hot lots", which
includes prototype lots. Hot lot cycle times and the premiums to be
paid therefor are listed in Exhibit K.
6.5 Fairchild may manufacture lots of any size which satisfy the
requirements of effective manufacturing. However, National must
place orders for full flow and prototype Products in increments of
twelve (12) or twenty-four (24) Wafers. For personalized ASIC Wafers
drawn from mid-flow inventories, the smallest quantity that shall be
ordered by National is three (3) Wafers, except for Wafers
manufactured in the five-inch (5") fab, in which case the smallest
quantity that can be ordered is six (6) Wafers.
7.0 PRICES AND PAYMENT
7.1 The Parties hereby acknowledge that, as part of the collateral
transactions contemplated under the Purchase Agreement and ongoing
relationship between the Parties they have entered into the Revenue
Side Letter under which National has agreed to provide a minimum
revenue of Three Hundred Thirty Million Dollars ($330,000,000.00) to
Fairchild during the first thirty-nine (39) fiscal periods after the
Effective Date. National shall discharge its obligations under the
Revenue Side Letter by purchasing goods and services under this
Agreement, a corresponding Fairchild Assembly Services Agreement,
and a Mil/Aero Wafer and Services Agreement of even date herewith
(collectively the "Operating Agreements"). Set forth herein at
Exhibit N is the forecasted volume of Wafers, by Wafer Module and
Process, that National will purchase from Fairchild during the
aforementioned thirty-nine fiscal periods (the "Forecast
-12-
Volumes"). The Forecast Volumes are for pricing purposes under this
Section 7 only and may vary in magnitude and mix in practice,
whereupon the prices applicable to the revised magnitude and mix may
also vary. The Forecast Volumes will be reviewed and updated by the
Parties every six (6) fiscal periods and shall be consistent with
the principles of manufacturing set forth in Exhibit O.
7.2 Set forth in Exhibit N hereto are the prices which National shall
pay to Fairchild for Wafers manufactured hereunder during the first
six (6) fiscal periods of this Agreement. The prices in Exhibit N
for fiscal periods 7 through 39 are for information purposes only
and are based on the Parties' best estimate of projected volumes and
costs. Set forth herein at Exhibit M is the forecast capacity
utilization and associated fixed costs of the Xxxxxxxxx XX 6001
six-inch fab by both National and Fairchild for the term of this
Agreement.
7.3 The prices which National shall pay to Fairchild for Wafers
manufactured hereunder after the first six (6) fiscal periods of
this Agreement shall be determined as set forth herein in Exhibit L.
The pricing methodology to be followed hereunder will depend on the
Wafer Module in which the Wafers are being manufactured. In
addition, Products that qualify will be subject to a die cost
adjustment as provided in Exhibit E.
7.4 For purposes of Exhibit L, National, or any "Big 6" accounting firm
designated by National, shall have reasonable rights to audit not
more than twice each fiscal year the books and records of Xxxxxxxxx
relevant to the pricing terms of this Agreement in order to come to
agreement with Xxxxxxxxx with regard to Xxxxxxxxx'x actual
manufacturing costs.
7.5 Prices are quoted and shall be paid in U.S. Dollars. Such prices
shall be on an FOB ship point basis. Payment terms are net thirty
(30) from date of invoice. Miscellaneous services may be invoiced
separately.
7.6 National shall pay, in addition to the prices quoted or invoiced,
the amount of any freight, insurance, special handling and duties.
National shall also pay all sales, use, excise or other similar tax
applicable to the sale of goods or
-13-
provision of services covered by this Agreement, or National shall
supply Xxxxxxxxx with an appropriate tax exemption certificate.
7.7 National shall in no event be required to pay prices in excess of
those charged by Xxxxxxxxx for other third party foundry customers,
for substantially similar products sold on substantially similar
terms (e.g., volume, payment terms, manufacturing criteria,
contractual commitments vs. spot buys, etc.). In the event Xxxxxxxxx
desires to perform such foundry services for other third party
customers at such lower prices, Xxxxxxxxx shall immediately notify
National and National shall begin receiving the benefit of such
lower price at the same time as such other third party customer.
This Paragraph 7.7 shall not apply to the prices to be paid by
National hereunder for the first twelve (12) fiscal periods of this
Agreement, or if National fails to honor its fixed commitments under
Section 5 and to the extent that such sales by Xxxxxxxxx to third
party foundry customers are only made in an attempt to make up for
any underutilization of capacity thereby caused by National.
8.0 OTHER MANUFACTURING SERVICES
8.1 At National's request, Xxxxxxxxx will perform Wafer sort and test
services based on sort and test programs prepared, owned and
otherwise proprietary to National. Towards that end, National shall
supply Xxxxxxxxx with National-owned specific probe cards, load
boards and test software in order that Xxxxxxxxx may provide such
services. Wafer sort shall be priced by hours of active sorting,
with specific prices as set forth in Exhibit G, and specific sort
times as set forth in Exhibit B.
8.2 At National's request, Xxxxxxxxx will perform separate epitaxial
deposition services for National for Wafers not otherwise
manufactured by Xxxxxxxxx hereunder. The general principles set
forth in Sections 5 and 6 above shall apply to such services, with
epitaxial deposition services being treated as a separate Wafer
Module with its respective Capacity Request and Xxxxxxxxx Assured
Capacity, but the lead time for epitaxial deposition shall be one
(1) fiscal period. Prices
-14-
shown in Exhibit N for Wafer foundry services include epitaxial
deposition where appropriate. Otherwise, prices for such services
are set forth in Exhibit G.
8.3 At National's request, Xxxxxxxxx shall continue to provide certain
ongoing operational support services (the "Miscellaneous Support
Services") to National at the same level of support that was in
effect as of the Effective Date as listed in Exhibit J hereto
consisting of: (i) those services which will be provided to National
at no charge; and (ii) those services which will be provided at the
prices set forth in Exhibit J on a purchase order basis. Operational
support services not shown in Exhibit J will be provided on a
purchase order basis at prices to be negotiated by the Parties
case-by-case.
8.4 In support of the Processes and those manufacturing processes listed
in Exhibit C, Xxxxxxxxx will make available design support
information including the following items:
(a) Layout design rules.
(b) Industry standard models for active devices (BSIM3v3 for CMOS
devices and Xxxxxx-Xxxx with parasitics for bipolar devices)
representing nominal conditions and performance corners.
(c) Industry standard models, as stated in the National NTPRS
document in effect as of the Effective Date, for parasitic
elements, such as interconnect resistances and capacitances,
sheet resistivities of all conducting layers, parasitic
capacitances for diffused areas, and so forth, including
additional elements or devices intended for mixed-signal
applications.
(d) Process cross sections, if not already available at National.
(e) Sufficient sizing and PCM information to assure the integrity
of Masks ordered in support of Products to be manufactured.
(f) Yield models plus applicable current and forecast parameters
such as Ys and Do for those models.
-15-
This information should be in the form of at least one controlled
paper copy or electronic access to a controlled copy. National, at
its discretion, may request a controlled electronic copy of the
required information in lieu of the paper copy. Xxxxxxxxx will
provide the foregoing services at no charge to National, limited to
those engineering services performed as of the Effective Date. Any
additional requests are subject to fees set forth in Exhibit J.
9.0 DELIVERY; RESCHEDULING AND CANCELLATION
9.1 Xxxxxxxxx shall make reasonable and diligent efforts to deliver
Wafers on the delivery dates specified in the Product delivery
schedule provided by Xxxxxxxxx pursuant to Paragraph 6.1. Any
shipment made within fifteen (15) days before or after the shipment
date(s) specified in said Product delivery schedule shall constitute
timely shipment. Partial shipments will be allowed and may be
invoiced separately. A delivery will be considered conforming if it
contains a quantity equal to plus or minus five percent (5%) of the
quantity ordered.
9.2 If Xxxxxxxxx has not made shipment of Products within fifteen (15)
days after the shipment date specified in the Product delivery
schedule provided by Xxxxxxxxx pursuant to Paragraph 6.1, National
shall have the right, subject to Paragraph 19.2, to cancel that
portion of its purchase order pertaining to such Products, but only
in the event that National's customer for those Products has
cancelled its order with National for such Products. Notwithstanding
the foregoing, if Xxxxxxxxx has not made shipment of Products within
thirty (30) days after the shipment date specified in the Product
delivery schedule, National shall have the right, subject to
Paragraph 19.2, in its sole discretion, to cancel that portion of
its purchase order pertaining to such Products, regardless of
whether National's customer has cancelled its order with National or
not. In either event, any obligation of National under its Capacity
Request and/or any commitment to Xxxxxxxxx under the Revenue Side
Letter associated with such cancelled purchase order shall be
discharged in
-16-
full and National shall have no liability whatsoever to Xxxxxxxxx
therefore.
9.3 All Wafers delivered pursuant to the terms of this Agreement shall
be suitable, packed for shipment in Xxxxxxxxx'x standard containers,
marked for shipment to National's address set forth in the
applicable purchase order and delivered to a carrier or forwarding
agent chosen by National. Should National fail to designate a
carrier, forwarding agent or type of conveyance, Xxxxxxxxx shall
make such designation in conformance with its standard shipping
practices. Shipment will be F.O.B. shipping point, at which time
risk of loss and title shall pass to National. Shipments will be
subject to incoming inspection as set forth in Paragraph 10.2 below.
9.4 To facilitate the inspection of Product deliveries to National, lot
integrity shall be maintained on all such deliveries, unless
specifically waived by mutual agreement of the Parties.
9.5 Subject to the provisions of Section 6, National may cancel any
purchase order upon at least one (1) week's notice prior to the
commencement of manufacturing without charge, provided that National
reimburses Xxxxxxxxx for the cost of any unique raw materials
purchased for such order.
9.6 National may request that Xxxxxxxxx stop production of Wafers in
process for National's convenience and Xxxxxxxxx shall consider
stopping depending on the point of process. In such event, National
shall pay for all Wafers at the agreed price, subject to a
negotiated adjustment based upon the degree of completion of the
Wafers and whether or not Xxxxxxxxx is able to utilize the unfilled
capacity. Xxxxxxxxx will, if reasonably practicable, restart
production of stopped Wafers one time within a reasonable time after
receipt of a written request from National, subject to National's
payment of any additional expenses incurred. Sections 10, 11 and 12
of this Agreement shall not apply to Wafers stopped under this
Paragraph 9.6 for more than thirty (30) days, nor shall Xxxxxxxxx
make any commitments of yield with respect to such Wafers.
9.7 In the event that National elects to maintain an inventory of
partially finished Wafers, ownership
-17-
of the partially finished Wafers will pass to National when they
reach the holding point defined by the relevant Process flow.
Xxxxxxxxx will invoice National for such Wafers, but they will be
stored under clean-room conditions and remain in the Wafer
processing WIP management system. Xxxxxxxxx will inform National of
the number and types of these Wafers remaining in inventory at the
end of each fiscal period. Further, the electronic records and
physical inventory shall be available for inspection by National at
any time. Xxxxxxxxx shall credit National with the amount previously
invoiced for any such Wafers at such time as they are restarted in
the Process flow.
9.8 As of 12:01 A.M. on the Effective Date, National will own all Wafers
located at the Facilities which Xxxxxxxxx has commenced processing
but which have not yet been completed in accordance with the
pertinent Process flow. Unless expressly directed in writing by
National otherwise, Xxxxxxxxx shall continue to process each Wafer
to a normal state of completion in the applicable Wafer Module.
National shall pay Xxxxxxxxx for the accumulated additional
processing costs, plus a twenty-five percent (25%) xxxx up, for the
additional processing taking place on and after the Effective Date.
The provisions of Sections 10, 11 and 12 hereof shall specifically
apply to all such Wafers.
10.0 QUALITY CONTROL AND INSPECTION; AND RELIABILITY
10.1 Xxxxxxxxx will manufacture Wafers in accordance with the Quality and
Reliability Criteria for the applicable Product. Prior to shipment,
Xxxxxxxxx will perform the electrical parameter testing and other
inspections specified to be performed by it in the applicable
Acceptance Criteria on each Wafer lot manufactured. Xxxxxxxxx will
only ship those Wafer lots that successfully pass the applicable
Acceptance Criteria. Xxxxxxxxx will electronically provide National
with the electrical test data specified in the applicable Acceptance
Criteria. Wafers will be laser scribed with lot and wafer number for
statistical monitoring and lot number traceability.
10.2 National shall promptly provide for inspection and testing of each
shipment of Wafers upon receipt in
-18-
accordance with the Acceptance Criteria and shall notify Xxxxxxxxx
in writing of acceptance of the Wafers. If National has not given
written notice to Xxxxxxxxx of rejection of all or part of a
shipment within thirty (30) days of receipt, National will be deemed
to have accepted such Wafers. In the event any lot or Wafer is found
to fail the Acceptance Criteria prior to final acceptance, National
shall promptly return it to Xxxxxxxxx, together with all test data
and other information reasonably required by Xxxxxxxxx. Upon
confirmation by Xxxxxxxxx that such Wafers fail the Acceptance
Criteria, Xxxxxxxxx shall replace such lot or Wafer on a timely
basis.
10.3 National shall promptly provide for yield probe tests to be
conducted on the Wafers and communicate the results of the tests to
Xxxxxxxxx within thirty (30) days of receipt of Wafers from
Xxxxxxxxx. The right to return any Wafers for low yield shall be
governed by Section 11 below.
10.4 MPS-3-000 (Material Procurement Specification) - General Provisions
and Quality Requirements for External (Non-National) Wafer Fab
Facilities and MPS-3-001 (Material Procurement Specification) -
Technical Requirements for CMOS Processing are the National policies
for the purchase of integrated circuits from independent suppliers.
These policies as in effect at the Effective Date shall provide
criteria for the initial and continuing qualification of the
Facilities and evaluation of Wafers manufactured by Xxxxxxxxx
hereunder. To the extent that those policies are not inconsistent
with the provisions of this Agreement, National shall not be
required to accept delivery of any Wafers hereunder if Xxxxxxxxx
fails to comply with said policies or such other similar policies as
may be mutually agreed to in writing by the Parties.
10.5 Xxxxxxxxx hereby warrants that the South Portland, Maine Facility
currently is, and will remain throughout the term of this Agreement,
ISO9000 certified. Xxxxxxxxx further warrants that the West Jordan,
Utah Facility currently is, and will remain throughout the term of
this Agreement, ISO9000 and AEC-100 certified.
11.0 MINIMUM YIELD ASSURANCES
-19-
11.1 Xxxxxxxxx will guarantee a minimum yield assurance ("MYA") on a per
Product basis for those Wafers fabricated and probed by Xxxxxxxxx.
For Wafers not sorted by Xxxxxxxxx the MYA limits will apply only to
Wafers whose substandard yield is caused by materials or Xxxxxxxxx'x
workmanship. MYAs shall function as a reliability screen hereunder
for maverick Wafers, via standard sort test results and yield.
11.2 The baseline yield and initial MYA for each Product to be
manufactured by Xxxxxxxxx hereunder is set forth in Exhibit B
hereto.
11.3 For a new Product, the baseline yield and MYA will be established
after a minimum of twenty (20) Wafer lot runs have been tested to
production released test programs. A new baseline yield and MYA will
be calculated whenever National makes any modifications to said test
programs.
11.4 For Products that qualify for die cost sharing, as provided in
Exhibit E, the baseline Net Die Per Wafer (NDPW) for the Product
will be used for defining the MYA. For all other Products, each
fiscal quarter, each Product's baseline yield will be calculated
using the previous fiscal quarter's results, or the previous twenty
(20) Wafer lot runs if less than twenty (20) Wafer lot runs were
processed in said previous quarter. The mean and standard deviation
(sigma) yield for a Product, will be calculated using individual
Wafer data. Zero yielding Wafers will be excluded from such
calculations. The results of such calculations will be used in
defining the MYA for that Product for the quarter in which the
calculations are made, but only if the mean yield changes by more
than +/- 2%.
11.5 MYA will be determined as follows. For purposes of Wafers
manufactured in South Portland, Maine, Wafers which yield less than
sixty (60%) percent of the mean will be considered discrepant and
may be returned for full credit at National's discretion. For
purposes of Wafers manufactured in West Jordan, Utah, Wafers which
yield less than mean minus six sigma, as determined according to
National Specification SS4908 in the version extant as of the
Effective Date, will be considered
-20-
discrepant and may be returned for full credit at National's
discretion. In no event shall Xxxxxxxxx accept returns of Wafers on
non-released products.
11.6 National shall provide yield analysis information on Wafers returned
to Xxxxxxxxx under this Section 11, in order to assist Xxxxxxxxx in
continuous Process improvement.
11.7 In the event of an extended period of substandard yields on a
Product, Xxxxxxxxx will utilize its Best Efforts to correct any
Process related causes and the Parties will negotiate in good faith
to make up for the Process related yield loss experienced by
National and its customers.
12.0 WARRANTY
12.1 Xxxxxxxxx warrants that the Wafers delivered hereunder shall meet
the Quality and Reliability Criteria and shall be free from defects
in material and Xxxxxxxxx'x workmanship under normal use for a
period of one (1) year from the date of delivery. If, during the one
year period:
(i) Xxxxxxxxx is notified in writing promptly upon discovery with
a detailed description of any such defect in any Product (at
which time Xxxxxxxxx shall issue a return material
authorization number to National), and;
(ii) National returns such Product to the applicable Facility at
National's expense for inspection; and
(iii) Xxxxxxxxx'x examination of such Product reveals that the
Product is indeed defective and does not meet the applicable
Quality and Reliability Criteria or is defective in materials
or Xxxxxxxxx'x workmanship and such problems are not caused by
accident, abuse, misuse, neglect, improper storage, handling,
packaging or installation, repair, alteration or improper
testing or use by someone other than Xxxxxxxxx
then, within a reasonable time, Xxxxxxxxx, at its sole option, shall
either replace or credit National for such defective Product.
Xxxxxxxxx
-21-
shall return any Products replaced under this warranty to National,
transportation prepaid, and shall reimburse National for the
transportation charges paid by National in returning such defective
Products to Xxxxxxxxx.
12.2 THE FOREGOING WARRANTY CONSTITUTES XXXXXXXXX'X EXCLUSIVE LIABILITY,
AND NATIONAL'S EXCLUSIVE REMEDY, FOR ANY BREACH OF WARRANTY. EXCEPT
AS SET FORTH HEREIN, XXXXXXXXX MAKES AND NATIONAL RECEIVES NO
WARRANTIES OR CONDITIONS ON THE PRODUCTS, EXPRESS, IMPLIED,
STATUTORY OR OTHERWISE, AND XXXXXXXXX SPECIFICALLY DISCLAIMS ANY
WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.
13.0 ON-SITE INSPECTION AND INFORMATION
13.1 Xxxxxxxxx shall allow National and/or National's customers to visit
and evaluate the Facilities during normal business hours as part of
established source inspection programs, it being understood and
agreed between National and Xxxxxxxxx that National must obtain the
concurrence of Xxxxxxxxx for the scheduling of all such visits,
which such concurrence shall not be unreasonably withheld. It is
anticipated that such visits will occur no more than once per
quarter on average.
13.2 Upon National's written request, Xxxxxxxxx will provide National
with process control information, to include but not be limited to:
process and electrical test yield results, current process
specifications and conformance to specifications; calibration
schedules and logs for equipment; environmental monitor information
for air, gases and DI water; documentation of operator qualification
and training; documentation of traceability through Xxxxxxxxx'x
operation; and Xxxxxxxxx verification information. Except for
exigent circumstances, such requests shall not be made more than
twice per year for a given category of information.
14.0 PRODUCT ENGINEERING SUPPORT
14.1 The Parties will cooperate in allowing National employees to have
reasonable access to the Facilities during the term of this
Agreement (the "National
-22-
Engineering Team"), in order to assist in Product developments and
improvements. Xxxxxxxxx will provide reasonable office space to the
National Engineering Team, if required on a temporary basis not to
exceed sixty (60) days per occurrence, at no expense to National.
Should the National Engineering Team require long term, dedicated
office space, National agrees to pay Xxxxxxxxx the overhead cost
associated with such space. The National Engineering Team will
comply with all applicable Xxxxxxxxx regulations in force at the
Facilities and National hereby agrees to hold Xxxxxxxxx harmless for
any damages or liability caused by any member of the National
Engineering Team, which are attributable to: (i) the negligence or
willful malfeasance of such member, and (ii) any failure by such
member to comply with Xxxxxxxxx'x regulations in force at the
Facilities or with applicable law.
14.2 Xxxxxxxxx shall assist the efforts of the National Engineering Team
and provide National with reasonable and timely support.
14.3 Xxxxxxxxx shall assist National in any efforts to identify any
reliability problems that may arise in a Product. National shall
correct Product related problems and Xxxxxxxxx shall correct all
Process related problems.
15.0 TERM AND TERMINATION
15.1 The term of this Agreement shall be thirty-nine (39) fiscal periods
from the Effective Date; provided, however, that the Parties shall
not less than eight (8) fiscal periods prior to the end of such
thirty-ninth (39th) fiscal period determine in good faith either an
extension to this Agreement or a ramp-down schedule of production so
as to minimize disruption to both Parties. If the Parties are unable
to agree on the terms governing a ramp-down, National shall be
allowed to reduce its purchase commitment by not more than twenty
percent (20%) per fiscal quarter, starting one fiscal quarter after
the initial thirty-nine (39) fiscal period term of this Agreement.
National will provide Xxxxxxxxx with not less than ninety (90) days
prior written notice of any such reduction.
-23-
15.2 This Agreement may be terminated, in whole or in part, by one Party
sending a written notice to the other Party of the termination of
this Agreement, which notice specifies the reason for the
termination, upon the happening of any one or more of the following
events:
(a) the other Party is the subject of a petition filed in a
bankruptcy court of competent jurisdiction, whether voluntary
or involuntary, which petition in the event of an involuntary
petition is not dismissed within sixty (60) days; if a
receiver or trustee is appointed for all or a substantial
portion of the assets of the other Party; or if the other
Party makes an assignment for the benefit of its creditors; or
(b) the other Party fails to perform substantially any material
covenant or obligation, or breaches any material
representation or warranty provided for herein; provided,
however, that no right of termination shall arise hereunder
until sixty (60) days after receipt of written notice by the
Party who has failed to perform from the other Party,
specifying the failure of performance, and said failure having
not been remedied or cured during said sixty (60) day period.
15.3 Upon termination of this Agreement, all rights granted hereunder
shall immediately terminate and each Party shall return to the other
Party any property belonging to the other Party which is in its
possession, except that Xxxxxxxxx may continue to retain and use any
rights or property belonging to National solely for the period
necessary for it to finish manufacturing the currently forecasted
Xxxxxxxxx Assured Capacity and/or complete any production ramp-down
activity. Nothing in this Section 15 is intended to relieve either
Party of any liability for any payment or other obligations existing
at the time of termination.
15.4 The provisions of Sections 2, 12, 16, 17 and Paragraphs 19.5 and
19.8 shall survive the termination of this Agreement for any reason.
16.0 EXPORT CONTROL
-24-
16.1 The Parties acknowledge that each must comply with all rules and
laws of the United States government relating to restrictions on
export. Each Party agrees to use its Best Efforts to obtain any
export licenses, letters of assurance or other documents necessary
with respect to this Agreement.
16.2 Each Party agrees to comply fully with United States export laws and
regulations, assuring the other Party that, unless prior
authorization is obtained from the competent United States
government agency, the receiving Party does not intend and shall not
knowingly export or re-export, directly or indirectly, any Wafers,
Products, technology or technical information received hereunder,
that would be in contravention of any laws and regulations published
by any United States government agency.
17.0 CONFIDENTIALITY
17.1 For purposes of this Agreement, "Confidential Information" shall
mean all proprietary information, including National and/or
Xxxxxxxxx trade secrets relating to the subject matter of this
Agreement disclosed by one of the Parties to the other Party in
written and/or graphic form and originally designated in writing by
the disclosing Party as Confidential Information or by words of
similar import, or, if disclosed orally, summarized and confirmed in
writing by the disclosing Party within thirty (30) days after said
oral disclosure, that the orally disclosed information is
Confidential Information.
17.2 Except as may otherwise be provided in the Technology Licensing and
Transfer Agreement, each Party agrees that it will not use in any
way for its own account, or for the account of any third party, nor
disclose to any third party except pursuant to this Agreement, any
Confidential Information revealed to it by the other Party. Each
Party shall take every reasonable precaution to protect the
confidentiality of said information. Each Party shall use the same
standard of care in protecting the Confidential Information of the
other Party as it normally uses in protecting its own trade secrets
and proprietary information.
-25-
17.3 Notwithstanding any other provision of this Agreement, no
information received by a Party hereunder shall be Confidential
Information if said information is or becomes:
(a) published or otherwise made available to the public other than
by a breach of this Agreement;
(b) furnished to a Party by a third party without restriction on
its dissemination;
(c) approved for release in writing by the Party designating said
information as Confidential Information;
(d) known to, or independently developed by, the Party receiving
Confidential Information hereunder without reference to or use
of said Confidential Information; or
(e) disclosed to a third party by the Party transferring said
information hereunder without restricting its subsequent
disclosure and use by said third party.
17.4 In the event that either Party determines on the advice of its
counsel that it is required to disclose any information pursuant to
applicable law or receives any demand under lawful process to
disclose or provide information of the other Party that is subject
to the confidentiality provisions hereof, such Party shall notify
the other Party prior to disclosing and providing such information
and shall cooperate at the expense of the requesting Party in
seeking any reasonable protective arrangements requested by such
other Party. Subject to the foregoing, the Party that receives such
request may thereafter disclose or provide information to the extent
required by such law (as so advised by counsel) or by lawful
process.
18.0 REPORTS AND COMMUNICATIONS
18.1 Each Party hereby appoints a Program Manager whose responsibilities
shall include acting as a focal point for the technical and
commercial discussions
-26-
between them related to the subject matter of this Agreement, to
include monitoring within his or her respective company the
distribution of Confidential Information received from the other
Party and assisting in the prevention of the unauthorized disclosure
of Confidential Information within the company and to third parties.
The Program Managers shall also be responsible for maintaining
pertinent records and arranging such conferences, visits, reports
and other communications as are necessary to fulfill the terms and
conditions of this Agreement. The names, addresses and telephone
numbers of the Program Managers will be communicated between the
Parties from time to time.
19.0 GENERAL
19.1 AMENDMENT: This Agreement may be modified only by a written document
signed by duly authorized representatives of the Parties.
19.2 FORCE MAJEURE: A Party shall not be liable for a failure or delay in
the performance of any of its obligations under this Agreement where
such failure or delay is the result of fire, flood, or other natural
disaster, act of God, war, embargo, riot, labor dispute,
unavailability of raw materials or utilities (provided that such
unavailability is not caused by the actions or inactions of the
Party claiming force majeure), or the intervention of any government
authority, providing that the Party failing in or delaying its
performance immediately notifies the other Party of its inability to
perform and states the reason for such inability.
19.3 ASSIGNMENT: This Agreement may not be assigned by any Party hereto
without the written consent of the other Party; provided that
Xxxxxxxxx may assign its rights but not its obligations hereunder as
collateral security to any bona fide financial institution engaged
in acquisition financing in the ordinary course providing financing
to consummate the transactions contemplated by the Purchase
Agreement or any bona fide financial institution engaged in
acquisition financing in the ordinary course through whom such
financing is refunded, replaced, or refinanced and any of the
foregoing financial institutions may assign such rights in
connection with a sale of Xxxxxxxxx or the Business in
-27-
the form then being conducted by Xxxxxxxxx substantially as an
entirety. Subject to the foregoing, all of the terms and provisions
of this Agreement shall be binding upon, and inure to the benefit
of, and shall be enforceable by, the respective successors and
assigns of the Parties hereto.
19.4 COUNTERPARTS: This Agreement may be executed simultaneously in two
or more counterparts, each of which shall be deemed an original and
all of which together shall constitute but one and the same
instrument.
19.5 CHOICE OF LAW: This Agreement, and the rights and obligations of the
Parties hereto, shall be interpreted and governed in accordance with
the laws of the State of California, without giving effect to its
conflicts of law provisions.
19.6 WAIVER: Should either of the Parties fail to exercise or enforce any
provision of this Agreement such failure shall not be construed as
constituting a waiver or a continuing waiver of its rights to
enforce such provision or right or any other provision or right.
Should either of the Parties waive any provision or right under this
Agreement, such waiver shall not be construed as constituting a
waiver of any other provision or right.
19.7 SEVERABILITY: If any provision of this Agreement or the application
thereof to any situation or circumstance shall be invalid or
unenforceable, the remainder of this Agreement shall not be
affected, and each remaining provision shall be valid and
enforceable to the fullest extent.
19.8 LIMITATION OF LIABILITY: IN NO EVENT SHALL EITHER PARTY BE LIABLE
FOR ANY INDIRECT, SPECIAL, INCIDENTAL OR CONSEQUENTIAL DAMAGES
RESULTING FROM THE OTHER PARTY'S PERFORMANCE OR FAILURE TO PERFORM
UNDER THIS AGREEMENT, OR THE FURNISHING, PERFORMANCE, OR USE OF ANY
GOODS OR SERVICES SOLD PURSUANT HERETO, WHETHER DUE TO BREACH OF
CONTRACT, BREACH OF WARRANTY, NEGLIGENCE OR OTHERWISE, REGARDLESS OF
WHETHER THE NONPERFORMING PARTY WAS ADVISED OF THE POSSIBILITY OF
SUCH DAMAGES OR NOT.
19.9 EFFECT OF HEADINGS: The headings and sub-headings contained herein
are for information purposes only and shall have no effect upon the
intended purpose
-28-
or interpretation of the provisions of this Agreement.
19.10 INTEGRATION: The agreement of the Parties, which is composed of this
Agreement and the Exhibits hereto and the documents referred to
herein, constitutes the entire agreement and understanding between
the Parties with respect to the subject matter of this Agreement and
integrates all prior discussions and proposals (whether oral or
written) between them related to the subject matter hereof.
19.11 PUBLIC ANNOUNCEMENT: Prior to the closing of the transactions
contemplated under the Purchase Agreement, neither Xxxxxxxxx nor
National shall, without the approval of the other Party hereto, make
any press release or other public announcement concerning the terms
of the transactions contemplated by this Agreement, except as and to
the extent that any such Party shall be so obligated by law, in
which case the Party shall use its Best Efforts to advise the other
Party thereof and the Parties shall use their Best Efforts to cause
a mutually agreeable release or announcement to be issued; provided
that the foregoing shall not preclude communications or disclosures
necessary to (a) implement the provisions of this Agreement or (b)
comply with accounting, securities laws and Securities and Exchange
Commission disclosure obligations. Xxxxxxxxx shall provide National
with a reasonable opportunity to review and comment on any
references to National made by Xxxxxxxxx (and shall not include any
such references to National without the written consent of National,
which consent shall not be unreasonably withheld or delayed) in any
written materials that are intended to be filed with the Securities
and Exchange Commission in connection with obtaining financing
required to effect the transactions contemplated in connection with
the Purchase Agreement or intended to be distributed to prospective
purchasers pursuant to an offering made under Rule 144A promulgated
under the Securities Act of 1933 in connection with obtaining such
financing.
19.12 NO PARTNERSHIP OR AGENCY CREATED: Nothing contained herein or done
pursuant to this Agreement shall constitute the Parties as entering
upon a joint venture or partnership, or shall constitute either
Party the agent for the other Party for any
-29-
purpose or in any sense whatsoever.
19.13 BINDING EFFECT: This Agreement and the rights and obligations
hereunder shall be binding upon and inure to the benefit of the
Parties hereto and to their respective successors and assigns.
19.14 NOTICES: All notices, requests, demands and other communications
which are required or may be given under this Agreement shall be in
writing and shall be deemed to have been duly given when received if
personally delivered; when transmitted if transmitted by telecopy,
electronic or digital transmission method; the day after it is sent,
if sent for next day delivery to a domestic address by a recognized
overnight delivery service (e.g. Federal Express) and upon receipt,
if sent by certified or registered mail, return receipt requested.
In each case notice shall be sent to:
National: National Semiconductor Corporation
0000 Xxxxxxxxxxxxx Xxxxx
X.X. Xxx 00000
XX 00-000
Xxxxx Xxxxx, XX 00000-0000
Attn: General Counsel
FAX: (000) 000-0000
Fairchild: Xxxxxxxxx Semiconductor Corporation
MS 01-00 (General Counsel)
000 Xxxxxxx Xxxxxx
Xxxxx Xxxxxxxx, XX 00000
FAX: (000) 000-0000
or to such other place as such Party may designate as to itself by
written notice to the other Party.
-30-
IN WITNESS WHEREOF, the Parties have had this Agreement executed by
their respective duly authorized officers on the day and date first written
above. The persons signing warrant that they are duly authorized to sign for and
on behalf of the respective parties.
NATIONAL SEMICONDUCTOR CORPORATION
By: /s/ Xxxx X. Xxxxx III
------------------------
Title: Senior Vice President
XXXXXXXXX SEMICONDUCTOR CORPORATION
By: /s/ Xxxxxx X. Xxxxxx
--------------------------------
Title: Executive Vice President, CFO
-31-
EXHIBIT A
PROCESSES
4-inch Wafer Process Flows: Fairchild Maine Fab 4100
--------------------------------------------------------------------------------
Process Description and
Process Name Acceptance Specification Status
--------------------------------------------------------------------------------
ANALOG 5(mu) Bipolar Process Prod
Spec: Exhibit F - Fab 4100 "ANALOG"
--------------------------------------------------------------------------------
BUS 4(mu) Bipolar, Low Power Schottky optimized for Prod
Bus Interface applications
Spec: Exhibit F - Fab 4100 "BUS"
--------------------------------------------------------------------------------
CGS 4(mu) Bipolar, Low Power Schottky optimized for Prod
Clock Generator applications
Spec: Exhibit F - Fab 4100 "CGS"
--------------------------------------------------------------------------------
DRAM 3(mu) FAST, Bipolar Schottky optomized for DRAM Prod
controller applications
Spec: Exhibit F- Fab 4100 "DRAM"
--------------------------------------------------------------------------------
DTCOMM 3(mu) FAST, Bipolar Schottky optimized for data Prod
communications applications
Spec: Exhibit F - Fab 4100 "DTCOMM"
--------------------------------------------------------------------------------
DTP 4(mu) Bipolar, Low Power Schottky Prod
Spec: Exhibit F- Fab 4100 "DTP"
--------------------------------------------------------------------------------
LAN 4(mu) Bipolar, Low Power Schottky optimized for Prod
LAN
applications
Spec: Exhibit F- Fab 4100 "LAN"
--------------------------------------------------------------------------------
PTP 4(mu) Bipolar, Low Power Schottky optimized for Prod
point-to-point applications
Spec: Exhibit F - Fab 4100 "PTP"
--------------------------------------------------------------------------------
PTPCMOS 4(mu) Si Gate CMOS optimized for point-to-point Prod
applications
Spec: Exhibit F - Fab 4100 "PTPCMOS"
--------------------------------------------------------------------------------
RTCCMOS 3(mu) Si Gate CMOS optimized for real time clock Prod
applications
Spec: Exhibit F - Fab 4100 "RTCCMOS"
--------------------------------------------------------------------------------
5 inch Wafer Process Flows: Fairchild Maine Fab 5100
--------------------------------------------------------------------------------
Process Name Process Description and
Acceptance Specification Status
--------------------------------------------------------------------------------
GA20 2(mu) FACT Gate Arrays Prod
Spec: Exhibit F - Fab 5100 "GA20"
--------------------------------------------------------------------------------
ALS15 1.5(mu) Bipolar, Low Power Schottky for Read Prod
Channel circuits
Spec: Exhibit F - Fab 5100 "ALS15"
--------------------------------------------------------------------------------
CGSP/E 2.5(mu) HCMOS Prod
Spec: Exhibit F - Fab 5100 "GCSP/E"
--------------------------------------------------------------------------------
6-inch Wafer Process Flows: Xxxxxxxxx Maine Fab 6001
--------------------------------------------------------------------------------
Process Description and Equivalency
Process Name Acceptance Specification Weight Status
--------------------------------------------------------------------------------
ABIC2L ABiC-4 with two layers of metal, with a 1.65 Dev
mid-flow inventory point for subsequent 06
ASIC personalization. 0.8u BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC2L &
ABIC2LM"
--------------------------------------------------------------------------------
ABIC2LM ABiC-4 with two layers of metal, for use 1.65 Prod
in RF products. 0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC2L &
ABIC2LM"
--------------------------------------------------------------------------------
ABIC3L ABiC-4 with three layers of metal, with 1.85 Dev
a mid-flow inventory point for 06
subsequent ASIC personalization.
0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC3L &
ABIC4L"
--------------------------------------------------------------------------------
ABIC4L ABiC-4 with four layers of metal, with a 2.00 Dev
mid-flow inventory point for subsequent 06
ASIC personalization. 0.8(mu) BiCMOS
Spec: Exhibit F - Fab 6001 "ABIC3L &
ABIC4L"
--------------------------------------------------------------------------------
ABIC52L ABiC-5 with two layers of metal and 1.65 Dev
0.5(mu), three sided emitter, for use in 06
RF products. CMOS remains at 0.8(mu)
Spec: Exhibit F - Fab 6001 "ABIC52L"
--------------------------------------------------------------------------------
-2-
--------------------------------------------------------------------------------
BUS 1.0(mu) BiCMOS (1.0BCT) 1.5 Prod
Spec: Exhibit F - Fab 6001 "BUSA & CGS10"
--------------------------------------------------------------------------------
CS080C 0.8(mu) Core CMOS, with two layers of 1.0 Prod
metal and W-plug contact structure.
Spec: Exhibit F - Fab 6001 "CS080C"
--------------------------------------------------------------------------------
CS080CB1 BiCMOS version of CS080, with two layers 1.45 Prod
of metal and isolated NMOS devices
Spec: Exhibit F - Fab 6001 "CS080CB1"
--------------------------------------------------------------------------------
CS080CBTX BiCMOS version of CS080, with two layers 1.27 Prod
of metal and conventional epi, emulating
CS080AB run in Texas
Spec: Exhibit F - Fab 6001 "CS080CBTX"
--------------------------------------------------------------------------------
CS080CBIHY BiCMOS version of CS080, with two layers 1.45 Dev
of metal, isolated NMOS devices, high 06
voltage NPN and Schottky diode Spec: Exhibit
F - Fab 6001 "CS080CBIHY"
--------------------------------------------------------------------------------
CS080CBIP BiCMOS version of CS080, with two layers 1.45 Dev
of metal, isolated NMOS devices and 06
double poly capacitor
Spec: Exhibit F - Fab 6001 "CS080CBIP"
--------------------------------------------------------------------------------
CS080CBIVU BiCMOS version of CS080, with two layers 1.45 Dev
of metal isolated NMOS devices and 04
vertical PNP device
Spec: Exhibit F - Fab 6001 "CS080CBIVU"
--------------------------------------------------------------------------------
CGS10 1.0(mu) BiCMOS (1.0BCT) 1.5 Prod
Spec: Exhibit F - Fab 6001 "BUS & CGS10"
--------------------------------------------------------------------------------
-3-
6-inch Wafer Process Flows: Fairchild Utah Fab 3
--------------------------------------------------------------------------------
Process Name Process Description and
Acceptance Specification Status
--------------------------------------------------------------------------------
CE80SLM 0.8(mu) EPROM process with one layer of Prod
metal and AMG style cells
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CE080DLM 0.8(mu) EPROM process with two layers of Prod
metal and AMG style cells
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CS100P 1.0(mu) Core CMOS process, with Prod
poly-to-poly capacitor and two layers of
metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CS100HE2 Dense EEPROM variation of CS100, with Prod
double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CS80SG Low density EEPROM variation of CS080 Dev 07
with double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CS80SG3 Low density EEPROM variation of CS080 Dev 06
with double poly and triple metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
CS065SE Dense EEPROM variation of CS065S, with Dev 05
double poly and double metal
Spec: XXX-0000, XX-0000, TS-3021 (Salt
Lake)
--------------------------------------------------------------------------------
The following process flows are being discontinued, and no long term
manufacturing commitment can be supported.
--------------------------------------------------------------------------------
Process Description and
Process Name Acceptance Specification Status
--------------------------------------------------------------------------------
CE130 1.2(mu) EPROM process with one layer of Obsolete
metal and "Split Gate" style cells on
Spec: SOP-3060, XX-0000, XX-0000 (Salt 4/20/97
Lake)
--------------------------------------------------------------------------------
-4-
Exhibit B
Product List and Supporting Data
Products manufactured in West Jordan, Utah
--------------------------------------------------------------------------------------------------------------------------
Division Business AFM Product ID PDI Code Process Flow Sort Test Sort MYA Baseline Die Cost
Unit Wafer/Hour Yield Share
--------------------------------------------------------------------------------------------------------------------------
Analog DAP A7 ADC12062 ADC1206BZ6 CS100HE2 N/A N/A 48% 80%
Analog Mil 1T KSD64 KSD64A XX000XX0 X/X X/X X/X X/X
Analog DAP A5 LM75 LM75A CS100HE2 Versatest V210 N/A 51% 85% Yes
Analog DAP AT LM78 LM78A CS100HE2 N/A 0.88 45% 75%
Analog POWER 6J LM3810 LM3810A XX000XX0 X/X X/X X/X X/X
Analog FPD G2 LMC8310 LMC8310A XX000XX0 X/X X/X X/X X/X
Analog AMPS G2 LMC6953 LMC6953A CS100HE2 N/A N/A 50% 84%
Analog AMPS 6J LMC6980 LMC6980A XX000XX X/X X/X X/X X/X
Analog POWER 6J LM3621A LM3621A XX000XX0 X/X X/X X/X X/X
Analog POWER 6J LM3641 LM3641B XX000XX0 X/X X/X X/X X/X
Analog POWER 2U LP3470 XX0000XX XX000XX0 X/X X/X X/X X/X
PSD MICRO 2U COP7C256 COP7C256B CE80SLM Versatest V2 0.4 44% 73% Yes
PSD MICRO 2U COP7C257 COP7C257B CE80SLM Versatest V2 0.4 44% 73% Yes
PSD MICRO 2U COP8780 COP8780C CE130 Versatest V2 N/A 47% 79%
PSD MICRO 2U NMC8C64 NMC8C64A CE130 Versatest V2 1.5 52% 87% Yes
PSD MICRO 2U COP87SAC COP87SACA CE80DLM Versatest V2 0.6 51% 81% Yes
PSD MICRO 2U COP8SAA7 COP8SAA7A CE80DLM Versatest V2 0.3 53% 85%
PSD MICRO 2U CR16AHT7 CR16AHT7A CE80DLM Versatest V2 0.8 20% 33%
PSD MICRO 2U XX00XXX0 XX00XXX0X CS065SE Versatest V2 0.8 N/A N/A
PSD MICRO 2U XX00XXX0 XX00XXX0X CS065SE Versatest V2 2.4 N/A N/A
All devices which show N/A for sort are sorted eithr in Santa Calra or Malacca
(NSC)
Exhibit B
Product List and Supporting Data
Products manufactured in Arlington, Texas
--------------------------------------------------------------------------------------------------------------------------
Division Business AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Unit Flow Wafer/Hour Yield Share
--------------------------------------------------------------------------------------------------------------------------
Memory E2PROM 84 NMC24C16A CS160/EE Megatest 1.50 55% 92%
Q2/52
Memory E2PROM 84 NMC25C14A CS160/EE Megatest 0.35 55% 92%
Q2/52
Memory E2PROM 84 NMC59C16A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC66C02A CS160/EE Megatest 1.50 55% 92% Yes
Q2/52
Memory E2PROM 84 NMC66C04A CS160/EE Megatest 0.67 55% 92%
Q2/52
Memory E2PROM 84 NMC66C06A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC66C08A CS160/EE Megatest 0.75 55% 92%
Q2/52
Memory E2PROM 84 NMC66C16A CS160/EE Megatest 1.50 55% 92%
Q2/52
Memory E2PROM 84 NMC66C46A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC66C47A CS160/EE Megatest 0.92 55% 92% Yes
Q2/52
Memory E2PROM 84 NMC66C56A CS160/EE Megatest 1.33 55% 92% Yes
Q2/52
Memory E2PROM 84 NMC66C57A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC66C66A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC88C06A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC88C11A CS200B/EE Megatest 0.67 55% 92%
Q2/52
Memory E2PROM 84 NMC88C46A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC88C47A CS160/EE Megatest 0.92 55% 92%
Q2/52
Memory E2PROM 84 NMC93C06A CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC93C07B CS160/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC93C11A CS160/EE Megatest 0.67 55% 92%
X0/00
Xxxxxx X0XXXX 00 XXX00X00X CS160/EE Megatest 1.00 55% 92% Yes
Q2/52
Memory E2PROM 84 NMC93C47A CS200B/EE Megatest 0.92 55% 92%
Q2/52
Memory E2PROM 84 NMC93C55A CS200B/EE Megatest 1.20 55% 92%
Q2/52
Memory E2PROM 84 NMC93C56B CS200B/EE Megatest 1.33 55% 92%
X0/00
Xxxxxx X0XXXX 00 XXX00X00X CS200B/EE Megatest 0.40 55% 92%
Q2/52
Memory E2PROM 84 NMC93C66A CS200B/EE Megatest 1.00 55% 92%
Q2/52
Memory E2PROM 84 NMC95C12A CS160/EE Megatest 0.33 55% 92%
X0/00
Xxxxxx X0XXXX 00 XXX00X00X CS160/EE Megatest 0.33 55% 92%
Q2/52
Logic CMOS W1 GTLP16612B6B CS080A Megatest Non-sort 55% 92%
Q2/52
Exhibit B
Product List and Supporting Data
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
ANALOG COMLINEAR R3 307010A6B 307010A6B-BAA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX X0 000000X0X 397012A6B-BAA ABIC2LM NATIONAL N/A N/A N/A
ANALOG COMLINEAR R4 397013B6B 397013B6B-BBA ABIC2LM NATIONAL N/A N/A N/A
ANALOG COMLINEAR R4 397013B6B 397013B6B-BCA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX X0 000000X0X 387017A6B-BAA ABIC2LM NATIONAL X/X X/X X/X
XXXXXX XXXXXXXXX XXX 0X XX0000X0X DM8640A4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8641A4B DM86414B-TAB BUS MCT20XX 2.4 53% 89%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8833B4B DM8833B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8834B4B DM8834B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8835B4B DM8835B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DM8836B4B DM8836B4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8837B4B DM8837B4B-TAB BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8838A4B DM8838A4B-TAB BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DM8839B4B DM8839B4B-TAB BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DP7303C4B DP7303C4B-TAA BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7304C4B DP7304C4B-TAA BUS MCT20XX 2.4 52% 86%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7307C4B DP7307C4B-TAA BUS MCT20XX 2.4 50% 83%
CIRCUIT
ANALOG INTERFACE BUS 4K DP7308C4B DP7308C4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1662C4B DS1662C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS1667C4B DS1667C4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1776Z4B DS1776Z4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS1772Z4B DS1777Z4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K DS55160C4B DS55160C4B-TAA BUS MCT20XX 2.4 55% 91%
CIRCUIT
ANALOG INTERFACE BUS 4K DS55161C4B DS55161C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS55162C4B DS55162C4B-TAA BUS MCT20XX 2.4 53% 88%
CIRCUIT
ANALOG INTERFACE BUS 4K DS76S10A4B DS76S10A4B-TAA BUS MCT20XX 2.4 58% 96%
CIRCUIT
ANALOG INTERFACE BUS 4K DS76S11A4B DS76S11A4B-TAA BUS MCT20XX 2.4 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K T3883B6B T3883B6B-BAB BUS BCT1.0 MCT20XX 1.9 N/A N/A
CIRCUIT
ANALOG INTERFACE BUS 4K T3884B6B T3884B6B-BGA BUS BCT1.0 MCT20XX 1.9 51% 85%
CIRCUIT
ANALOG INTERFACE BUS 4K T3886B6B T3886B6B-BLA BUS BCT1.0 MCT20XX 1.9 52% 86%
CIRCUIT
ANALOG INTERFACE DATACOM X0 XX0000X0X DS1619A4B-TAA DTCOMM MCT20XX 2.4 55% 91%
ANALOG INTERFACE DATACOM X0 XX00XX00X0XXX00XX00X0X-XXX DTCOMM MCT20XX 2.4 55% 96% YES
ANALOG INTERFACE DATACOM X0 XX00XX00X0XXX00XX00X0X-XXX/XXXXXX MCT20XX 2.4 55% 92%
ANALOG INTERFACE DATACOM X0 XX00XX00X0XXX00XX00X0X-XXX DTCOMM MCT20XX 2.4 56% 93% YES
ANALOG INTERFACE DATACOM X0 XX00XX00X0XXX00XX00X0X-XXX/XXXXXX MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX00X0XXX00XX00X0X-XXX DTCOMM MCT20XX 2.4 55% 92% YES
ANALOG INTERFACE DATACOM H1 DS347B4B DS3487B4B-TAA DTCOMM MCT20XX 2.0 56% 94% YES
ANALOG INTERFACE DATACOM X0 XX0000X0X DS3586A4B-TAA DTCOMM MCT20XX 2.0 58% 96% YES
ANALOG INTERFACE DATACOM H1 DS3587B4B DS3587B4B-TAA DTCOMM MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7632A4B-TAA DTCOMM MCT20XX 1.2 57% 95%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7632A4B-TAA/E DTCOMM MCT20XX 1.2 55% 92%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS7633A4B-TAA DTCOMM MCT20XX 1.2 55% 92%
ANALOG INTERFACE DATACOM X0 XX00X000X0XXX00X000X0X-XXX DTCOMM MCT20XX 2.0 55% 92%
ANALOG INTERFACE DATACOM X0 XX00X000X0XXX00X000X0X-XXX/XXXXXX MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX000X0XX00XX000X0X-XXXXXXXXX MCT20XX 2.0 N/A N/A
ANALOG INTERFACE DATACOM X0 XX00XX000X0XX00XX000X0X-XXXXXXXXX MCT20XX 2.0 N/A N/A
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8921A4B-TAA DTCOMM MCT20XX 2.4 56% 94%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS89922A4B-TAA DTCOMM MCT20XX 2.4 54% 90%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8923A4B-TAA DTCOMM MCT20XX 2.4 55% 92%
ANALOG INTERFACE DATACOM H1 DS8925B4B DS8925B4B-TBA DTCOMM MCT20XX 2.4 53% 89%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8926A4B-TAA-PQDTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8933A4B-TAA DTCOMM MCT20XX 2.4 54% 90%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8934A4B-TAA DTCOMM MCT20XX 2.4 50% 84%
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8935A4B-TAA DTCOMM MCT20XX 2.4 N/A N/A
ANALOG INTERFACE DATACOM X0 XX0000X0X DS8936A4B-TAA-PQDTCOMM MCT20XX 2.4 X/X X/X
XXXXXX XXXXXXXXX XXXXXXX X0 0000X0X 9636A4B-TAA DTCOMM MCT20XX 2.2 55% 92%
ANALOG INTERFACE DATACOM H1 9637A4B 9637A4B-TBA DTCOMM MCT20XX 2.2 57% 95%
ANALOG INTERFACE DATACOM H1 9638A4B 9638A4B-TDB DTCOMM MCT20XX 2.2 55% 92%
ANALOG INTERFACE DATACOM H1 9638A4B 9638A4B-TDB/E DTCOMM MCT20XX 2.2 N/A N/A
ANALOG INTERFACE DATACOM H1 9639A4B 9639A4B-TAA DTCOMM MCT20XX 2.2 57% 95%
Exhibit B
Product List and Supporting Data
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE 80 DM8830E4B DM8830E4B-TAB DTP MCT20XX 2.1 55% 92%
MULTIPOINT
ANALOG INTERFACE 80 DM8830E4B DM8830E4B-TAB/D DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DM8831B4B DM8831B4B-TAB DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DM8832B4B DM8832B4B-TAB DTP MCT20XX 2.1 53% 89%
MULTIPOINT
ANALOG INTERFACE 80 DM8832B4B DM8832B4B-TAB/E DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS16195C4B DS16195C4B-TBA DTP MCT20XX 2.1 56% 93% YES
MULTIPOINT
ANALOG INTERFACE 80 DS16196B4B DS16196B4B-TAA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS16196C4B DS16196C4B-TAA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS1650A4B DS1650A4B-TAA DTP MCT20XX 2.1 57% 95%
MULTIPOINT
ANALOG INTERFACE 80 DS1652A4B DS16542A4B-TAA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS1695A4B DS1695A4B-TBA DTP MCT20XX 2.1 55% 92% YES
MULTIPOINT
ANALOG INTERFACE 80 DS1696A4B DS1696A4B-TAA DTP MCT20XX 2.1 56% 94%
MULTIPOINT
ANALOG INTERFACE 80 DS1697A4B DS1697A4B-TAA DTP MCT20XX 2.1 58% 97%
MULTIPOINT
ANALOG INTERFACE 80 DS1698A4B DS1698A4B-TAA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS36276C4B DS36276C4B-TAA DTP MCT20XX 2.1 41% 69%
MULTIPOINT
ANALOG INTERFACE 80 DS36277C4B DS36277C4B-TAA DTP MCT20XX 2.1 54% 90% YES
MULTIPOINT
ANALOG INTERFACE 80 DS3695A4B DS3695A4B-TAA DTP MCT20XX 2.1 55% 92%
MULTIPOINT
ANALOG INTERFACE 80 DS75113A4B DS75113A4B-TAB DTP MCT20XX 2.1 55% 92%
MULTIPOINT
ANALOG INTERFACE 80 DS75114A4B DS75114A4B-TAB DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS75114A4B DS75114A4B-TAB/CDTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 DS75115A4B DS75115A4B-TAB DTP MCT20XX 2.1 55% 92%
MULTIPOINT
ANALOG INTERFACE 80 DS75176B4B DS75175B4B-TCA DTP MCT20XX 2.1 54% 90% YES
MULTIPOINT
ANALOG INTERFACE 80 DS8820H4B DS8820H4B-TBB DTP MCT20XX 2.1 54% 90%
MULTIPOINT
ANALOG INTERFACE 80 DS8820H4B DS8820H4B-TBB/E DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 LM163A4B LM163A4B-TAB DTP MCT20XX 2.1 32% 54%
MULTIPOINT
ANALOG INTERFACE 80 LM3623A4B LM3623A4B-TAB DTP MCT20XX 2.1 55% 92%
MULTIPOINT
ANALOG INTERFACE 80 LM3624A4B LM3624A4B-TAB DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 LM75107A4B LM75107A4B-TAB DTP MCT20XX 2.1 58% 97% YES
MULTIPOINT
ANALOG INTERFACE 80 LM75108A4B LM75108A4B-TAB DTP MCT20XX 2.1 53% 88%
MULTIPOINT
ANALOG INTERFACE 80 LM75122A4B LM75122A4B-TAB DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 LM75124A4B LM75124A4B-TAB DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 X172B4B X172B4B-TCB DTP MCT20XX 3.0 35% 58%
MULTIPOINT
ANALOG INTERFACE 80 X173A4B X173A4B-TBB DTP MCT20XX 3.0 35% 58% YES
MULTIPOINT
ANALOG INTERFACE 80 X174B4B X174B4B-TCB DTP MCT20XX 3.0 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 X175A4B X175A4B-TBB DTP MCT20XX 3.0 35% 58%
MULTIPOINT
ANALOG INTERFACE 80 X176A4B X176A4B-TBB DTP MCT20XX 3.0 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 X177A4B X177A4B-TBB DTP MCT20XX 3.0 35% 58%
MULTIPOINT
ANALOG INTERFACE 80 Y107A4B Y107A4B-TBA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 Y107A4B Y107A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 Y110A4B Y110A4B-TBA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9614A4B 9614A4B-TBA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9614A4B 9614A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9614A4B 9614A4B-TBA/E DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9615A4B 9615A4B-TBA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9615A4B 9615A4B-TBA/C DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9615A4B 9615A4B-TBA/E DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9622A4B 9622A4B-TBA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
ANALOG INTERFACE 80 9627A4B 9627A4B-TCA DTP MCT20XX 2.1 N/A N/A
MULTIPOINT
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
ANALOG INTERFACE PT TO X0 XX00X000X0X DS14C202A6B-BCA-CS080CBIHY MCT20XX 2.1 X/X X/X
XX
XXXXXX XXXXXXXXX XX XX X0 XX00X000X0X DS14C211A6B-BAA CS080CBIHY MCT20XX 2.1 X/X X/X
XX
XXXXXX XXXXXXXXX XX XX X0 XX00X00X0X DS14C89C4B-TCA PTPCMOS MCT20XX 2.1 54% 90% YES
PT
ANALOG INTERFACE PT TO H2 DS14185A4B DS14185A4B-TCA PTP MCT20XX 3.0 57% 95% YES
PT
ANALOG INTERFACE PT TO H2 DS14196A4B DS14169A4B-TAA PTP MCT20XX 2.1 57% 95% YES
PT
ANALOG INTERFACE PT TO H2 DS75150A4B DS75150A4B-TBB PTP MCT20XX 2.1 58% 96%
PT
ANALOG INTERFACE PT TO H2 DS75154A4B DS75154A4B-TBB PTP MCT20XX 2.1 58% 96%
PT
ANALOG INTERFACE PT TO H2 DS8933A4B DS8933A4B-TAA PTP MCT20XX 2.1 50% 84%
PT
ANALOG INTERFACE PT TO H2 DS8934B4B DS8934B4B-TBA PTP MCT20XX 2.1 52% 87%
PT
ANALOG INTERFACE PT TO H2 FM1488A4B FM1488A4B-TAA PTP MCT20XX 2.1 58% 96%
PT
ANALOG INTERFACE PT TO H2 LM1589B4B LM1589B4B-TBB PTP MCT20XX 2.1 58% 97%
PT
ANALOG INTERFACE PT TO H2 LM1590B4B LM1590B4B-TBB PTP MCT20XX 2.1 58% 97%
PT
ANALOG INTERFACE PT TO H2 9616A4B 9616A4B-TDA DTCOMM MCT20XX 2.1 X/X X/X
XX
X0 XX00X00X0X PTPCMOS 54% 90% YES
Exhibit B
Product List and Supporting Data
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
ANALOG WIRELESS ABIC 9W LMX150AD6B LMX1501AD6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX1511D6B LMX1511D6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2301D6B LMX2301D6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX2305D6B LMX2305D6B-BAA ABIC2LM MCT20XX 0.2 30% 50%
ANALOG WIRELESS ABIC 9W LMX2306B6B LMX2306B6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2315D6B LMX2315D6B-BAA ABIC2LM MCT20XX 0.2 43% 71% YES
ANALOG WIRELESS ABIC 9W LMX2316B5B LMX2316B6B-BAA ABIC2LM MCT20XX 0.2 N/A N/A
ANALOG WIRELESS ABIC 9W LMX2320D6B LMX2320D6B-BAA ABIC2LM MCT20XX 0.2 46% 76%
ANALOG WIRELESS ABIC 9W LMX2331B6B LMX2331C6B-BAA ABIC2LM MCT20XX 0.2 36% 60% YES
ANALOG WIRELESS ABIC 9W LMX2332C6B LMX2332C6B-BAA ABIC2LM MCT20XX 0.2 34% 57% YES
ANALOG WIRELESS ABIC 9W LMX2335C6B LMX2335C6B-BAA ABIC2LM MCT20XX 0.2 40% 66% YES
C&C AUTO DISPLAY 42 DM8893A4B DM8893A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DM8894A4B DM8894A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DP8310C4B DP8310C4B-TBB ANALOG MCT20XX 2.3 51% 85%
DRIVER
C&C AUTO DISPLAY 42 DP8311C/M4B DP8311C4/M4B-TBBANALOG MCT20XX 2.3 53% 89%
DRIVER
C&C AUTO DISPLAY 42 DP8311C4B DP8311C4B-TBB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS0025A4B DS0025A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS0026B4B DS0026B4B-TBB ANALOG MCT20XX 2.3 58% 96% YES
DRIVER
C&C AUTO DISPLAY 42 DS0026B4B DS0026B4B-TBB/E ANALOG MCT20XX 2.3 50% 83%
DRIVER
C&C AUTO DISPLAY 42 DS0056B4B DS0056B4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS75325D4B DS75325D4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS75361A4B DS75361A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS75365A4B DS75365A4B-TBB ANALOG MCT20XX 2.3 55% 92%
DRIVER
C&C AUTO DISPLAY 42 DS75450C4B DS75450C4B-TBB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 DS75451B4B DS75451B4B-TAB ANALOG MCT20XX 2.3 56% 93%
DRIVER
C&C AUTO DISPLAY 42 DS75452B4B DS75452B4B-TAB ANALOG MCT20XX 2.3 55% 91% YES
DRIVER
C&C AUTO DISPLAY 42 DS75453B4B DS75453B4B-TBB ANALOG MCT20XX 2.3 56% 93% YES
DRIVER
C&C AUTO DISPLAY 42 DS75454B4B DS75454B4B-TBB ANALOG MCT20XX 2.3 59% 98%
DRIVER
C&C AUTO DISPLAY 42 DS88L12B4B DS88L12B4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 LM106E4B LM106E4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 LM1514A4B LM1514A4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 LM710D4B LM710D4B-TAB ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7710A/C4G 7710A/C4G-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7710A/M4G 7710A/M4G-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7710A4B 7710A4B-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7710A4G 7710A4G-TBA/C ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7711/C4G 7711/C4G-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7711A/C4G 7711A/C4G-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7711A/M4G 7711A/M4G-TBA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 7711A4G 7711A4G-TBA/C ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 9665B4B 9665B4B-TCA ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 9667B4B 9667B4B-TCA ANALOG MCT20XX 2.3 55% 92% YES
DRIVER
C&C AUTO DISPLAY 42 9667B4B 9667B4B-TCA/E ANALOG MCT20XX 2.3 N/A N/A
DRIVER
C&C AUTO DISPLAY 42 9668B4B 9668B4B-TDA ANALOG MCT20XX 2.3 56% 93%
DRIVER
C&C CLASIC 7H CS0354B6 CS0354B6-BBAB CS80CBI XXXXXXXXX X/X X/X X/X
X/X X/X
Xxxxxxx X
Product List and Supporting Data
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
C&C LAN MEDIA 15 DP8392C4 DP8392C4-TAA LAN MCT20XX 2.1 51% 85% YES
C&C LAN MEDIA 15 DP8394D4 DP8394D4-TBA LAN MCT20XX 2.1 N/A N/A
C&C PLEXUS X3 DP73840B6B DP73840B6B-BBB-6CS080CBTX LTX TRILLIU 3.3 38% 64%
C&C PLEXUS X3 DP73840B6B DP73840B6B-BBB-6CS080CBTX LTX TRILLIU 3.3 38% 64%
C&C WAN ABIC 89 FNGM8902Z6B FNGM8902Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H841Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H842Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 X000X0X H847Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MB2581Z6B MB2581Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MB8902Z6B MB8902Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 MJ2680Z6B MJ2680Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2331Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2518Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2532Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X MK2533Z6B-BAA ABIC3L/4L NATIONAL X/X X/X X/X
X&X XXX XXXX 00 XX0000X0X XX0000X0X-XXX ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 SF2669Z6B SF2669Z6B-BAA ABIC3L/4L NATIONAL N/A N/A N/A
C&C WAN ABIC 89 TS2501Z6B XX000X0X-XXX XXXX0X/0X NATIONAL X/X X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0 CA0500Y5-CAB GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1142Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1202Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CA1325Y5B XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1094Y5B CC1094Y5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1110Y5B CC1110Y5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1144Y5B CC1144Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX000X0X XX000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX000X0X-XXX XX00 SENTRY 20 2.0 49% 82%
C&C WAN GATE ARRAY 3D CC1191Y5B CC1191Y5B-CAF GA20 SENTRY 20 2.0 49% 82%
C&C WAN GATE ARRAY 3D CC1194Y5B CC1194Y5B-CAF GA20 SENTRY 20 2.0 52% 86%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
----------------------------------------------------------------------------------------------------------------------------
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 42% 70%
C&C WAN GATE ARRAY 3D CC1510Y5B CC1510Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX GA20 SENTRY 20 2.0 52% 86%
C&C WAN GATE ARRAY 3D CD1193Z5B CD1193Z5B-CAF GA20 SENTRY 20 2.0 49% 81%
C&C WAN GATE ARRAY 3D CD1251Z5B CD1251Z5B-CCF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1259Z5B-CAF GA20 SENTRY 20 2.0 44% 74%
Exhibit B
Product List and Supporting Data
-----------------------------------------------------------------------------------------------------------------------------
Division Business Unit AFM Product ID PDI Code Process Sort Test Sort MYA Baseline Die Cost
Flow Wafer/Hour Yield Share
-----------------------------------------------------------------------------------------------------------------------------
C&C WAN GATE ARRAY 3D CD1270Z5B CD1270Z5B-CAF GA20 SENTRY 20 2.0 43% 72%
C&C WAN GATE ARRAY 3D CD1301Z5B CD1301Z5B-CCF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1434Z5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1472Z5B-CAF GA20 SENTRY 20 2.0 42% 70%
C&C XXX XXXX XXXXX 0X XX0000X0X XX0000X0X-XXX XX00 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CD1693Z5B-CAF GA20 SENTRY 20 2.0 44% 73%
C&C XXX XXXX XXXXX 0X XX0000X0X CE1136Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1435Y5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1471Y5B-CBF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1690Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1954Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1955Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CE1956Y5B-CAF GA20 SENTRY 20 2.0 X/X X/X
X&X XXX XXXX XXXXX 0X XX0000X0X CI1532Z5B-CAF GA20 SENTRY 20 2.0 N/A N/A
PSD CGS 4N CGS100B2530A4B CGS100B2530A4B-TAB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS100B2531A4B CGS100B2531A4B-TAB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS2534Z6B CGS2534Z6B-BAB CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS2535Z6B CGS2535Z6B-BAB CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS2536Z6B CGS2536Z6B-BAB CGS10 MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX0000X0X XXX0000X0X-XXX CGS10 MCT20XX 2.0 50% 50%
PSD CGS 4N CGS74B2525Y4B CGS74B2525Y4B-TDB CGS MCT20XX 2.0 N/A N/A
PSD CGS 4N CGS74B2528A4B CGS74B2528A4B-TCB CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00X000X0X XXX00X000X0X-XXX CGS MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00XX0000X0X XXX00XX0000X0X-XXX CGSP/E MCT20XX 2.0 X/X X/X
XXX XXX 0X XXX00XX0000X0X XXX00XX0000X0X-XXX CGSP/E MCT20XX 2.0 56% 93%
PSD CGS 4N CGS74CT2526Z5B CGS74CT256Z5B-CBF CGSP/E MCT20XX 2.0 50% 83%
PSD CGS 4N CGS74C2525Z5B CGS74C2525Z5B-CCF CGSP/E MCT20XX 2.0 50% 83%
PSD CGS 4N CGS74C2526Z5B CGS74C2526Z5B-CCF CGSP/E MCT20XX 2.0 N/A N/A
PSD DRAM 81 DP8409A4B DP8409A4B-TAA DRAM N/A N/A N/A
PSD DRAM 81 DP8410A4B DP8410A4B-TAA DRAM X/X X/X X/X
XXX XXXX 00 X000X0X M632Y4B-TDB DRAM MCT20XX 2.0 41% 68%
PSD XXXX XXXXXXX 0X XXX000X0X XXX000X0X-XXX ALS15 MCT20XX 3.0 X/X X/X
XXX XXXX XXXXXXX 0X XXX000X0X DPC110A5B-CAA ALS15 MCT20XX 3.0 N/A N/A
PSD MASS STORAGE 4H DP84910DC5B DP84910DC5B-CEA ALS15 MCT20XX 3.0 46% 76% YES
PSD REAL TIME CLOCK 4C MM48167W4B MM48167W4B-TAA RTCCMOS NATIONAL N/A N/A N/A
PSD REAL TIME CLOCK 4C MM48174V4B MM48174V4B-TAA RTCCMOS NATIONAL N/A N/A N/A
PSD REAL TIME CLOCK 4C MM48274D4B MM48274D4B-TAA RTCCMOS NATIONAL N/A 42% 70% YES
PSD NOTEBOOK H6 PC77336 PC77336-A1A CS080C LTX TRILLIU 2.0 44% 73% YES
PSD DESKTOP 6F PC77332E1A PC77332E1A-B CS080C LTX TRILLIU 4.0 44% 73% YES
PSD DESKTOP 6F PC77306B1A PC77306B1A-BIBD CS080C LTX TRILLIU 4.0 43% 71% YES
PSD DESKTOP 6F PC77306B1A PC77306B1A-BIBR CS080C LTX TRILLIU 4.0 43% 71% YES
- Sort Wafer/Hour numbers reflect Family Level Averages on low running devices.
Individual Device UPH will be updated when material is available at Sort.
EXHIBIT C
PROCESS DEVELOPMENT SCHEDULE
The following processes, upon which development is underway, will be
regarded as complete when qualification is achieved to Class III, as
defined in National specification SOP-5-032 RA. Additional funding will be
required from National if programs are not completed due to National's
failure to perform its responsibilities by the Scheduled End of Work date.
Schedule
Process Site Description Completion Funding
------- ---- ----------- ---------- -------
CS080CBIVU Maine BiCMS version of CS080, May 25, 1997 $300K
with two layers of metal,
isolated NMOS devices and
vertical PNP device
CS065SE Utah Dense EEPROM variation of May 25, 1997 $300K
CS065S, with double poly
and double metal
As of November 19, 1996, the following processes had not yet achieved Class III
qualification, but they are expected to be Class III qualified by February 23,
1997. They are included here for reference only.
Scheduled
Process Site Description Completion
------- ---- ----------- ----------
ABIC2L Maine ABiC-4 with two layers of metal, with a Product Line
mid-flow inventory point for subsequent Dependent
ASIC personalization. 0.8(mu) BiCMOS
ABIC3L Maine ABiC-4 with three layers of metal, Product Line
with a mid-flow inventory point Dependent
for subsequent ASIC
personalization. 0.8(mu) BiCMOS
ABIC4L Maine ABiC-4 with four layers of metal, Product Line
with a mid-flow inventory point Dependent
for subsequent ASIC
personalization. 0.8(mu) BiCMOS
ABIC52L Maine ABiC-5 with two layers of metal and Feb. 23, 1997
0.5(mu), three sided emitter, for use
in RF products.
CMOS remains at 0.8(mu)
CS080CBIHY Maine BiCMOS Version of CS080, with two Jan. 19, 1997
layers of metal, isolated NMOS devices,
high voltage NPN and Schottky diode
CS080CBIP Maine BiCMOS version of CS080, with two Jan. 19, 1997
layers of metal, isolated NMOS devices
and double poly capacitor
CS80SG Utah Low density EEPROM variation of CS080 Dec. 5, 1996
with double poly and double metal
Spec:
CS80SG3 Utah Low density EEPROM variation of CS080 Jan. 19, 1997
with double poly and triple metal if product is
Spec: available
EXHIBIT D
CAPACITY REQUEST AND REPSONSE FORMATS
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx
Xxxxx Xxxxxxxx 0000 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
-----------============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG DAP FM584MGCMOS 0 0 0 0 0 0 0 0
ANALOG DAP FMA24MGCMOS 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM4K4BUS 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM804DTP 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH14DTCOMM 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH24PTP 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH24PTPCMOS 0 0 0 0 0 0 0 0
ANALOG Total 4100 0 0 0 0 0 0 0 0
==============================================
==============================================
CCG AUDIO FMA94HV700 0 0 0 0 0 0 0 0
CCG CD FM424ANALOG 0 0 0 0 0 0 0 0
CCG CD FM424ANALOGCMOS 0 0 0 0 0 0 0 0
CCG LAN FM154LAN 0 0 0 0 0 0 0 0
CCG Total 4100 0 0 0 0 0 0 0 0
==============================================
==============================================
PSD DESKTOP FM4C4RTCMOS 0 0 0 0 0 0 0 0
PSD DESKTOP FM4N4CGS 0 0 0 0 0 0 0 0
PSD DESKTOP FM814DRAM 0 0 0 0 0 0 0 0
PSD Total 4100 0 0 0 0 0 0 0 0
==============================================
Grand Total 4100 0 0 0 0 0 0 0 0
========================================================================
South Portland 5100 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
---------------========================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==================================================
==================================================
CCG WAN XX0X0XX00 0 0 0 0 0 0 0 0
CCG Total 0 0 0 0 0 0 0 0
5100
==================================================
==================================================
PSD DESKTOP FM4N5CGSP/E 0 0 0 0 0 0 0 0
PSD DESKTOP FM815ALS15 0 0 0 0 0 0 0 0
PSD MASSSTORAGE FM4H5MASSTOR 0 0 0 0 0 0 0 0
PSD Total 0 0 0 0 0 0 0 0
5100
==================================================
Grand Total 5100 0 0 0 0 0 0 0 0
==========================================================================
South Portland 6001 FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
-------------==========================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG INTERFACE FM4K680HV 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM4K6BUS 0 0 0 0 0 0 0 0
ANALOG DAP FM586CBIPC 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL FM7N6CBIVU 0 0 0 0 0 0 0 0
ANALOG AMPS FM7N6CSO80CBI 0 0 0 0 0 0 0 0
ANALOG INTERFACE FM806CS80CBI 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC2L 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC4L 0 0 0 0 0 0 0 0
ANALOG WIRELESS FM9W6ABIC52L 0 0 0 0 0 0 0 0
ANALOG DAP FMA76CBIPC 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH16CS80C 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH26CS80C 0 0 0 0 0 0 0 0
ANALOG INTERFACE FMH26CBIHY 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR16ABIC2LM 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR36ABIC2LM 0 0 0 0 0 0 0 0
ANALOG COMLINEAR FMR46ABIC2LM 0 0 0 0 0 0 0 0
ANALOG Total 0 0 0 0 0 0 0 0
6001
==============================================
==============================================
CCG LAN FM156LANCS65 0 0 0 0 0 0 0 0
CCG LAN FM156LANCS80 0 0 0 0 0 0 0 0
CCG WAN FM896ABIC4L 0 0 0 0 0 0 0 0
CCG WAN RM896ABIC3L 0 0 0 0 0 0 0
CCG CD FM896ABIC2L 0 0 0 0 0 0 0 0
CCG CD FMT9680CBI 0 0 0 0 0 0 0 0
CCG LAN FMX36LAN80CBTX 0 0 0 0 0 0 0 0
CCG Total 0 0 0 0 0 0 0
6001
==============================================
==============================================
PSD DESKTOP FM4N6CGS10 0 0 0 0 0 0 0
PSD DESKTOP FM4NCCS65CBI 0 0 0 0 0 0 0 0
PSD DESKTOP FM4N6CS80CBI 0 0 0 0 0 0 0 0
PSD DESKTOP FM6F6ES80C 0 0 0 0 0 0 0 0
PSD NOTEBOOK FMH66ES80C 0 0 0 0 0 0 0 0
PSD Total 0 0 0 0 0 0 0 0
6001
==============================================
Grand Total 6001 0 0 0 0 0 0 0 0
============================================================================
Salt Lake City 6=inch FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
-----------============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
ANALOG DAP CS100HE2 0 0 0 0 0 0 0 0
ANALOG INTERFACE CS100HE2 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL CS100HE2 0 0 0 0 0 0 0 0
ANALOG POWER MGT CS100HE2 0 0 0 0 0 0 0 0
ANALOG INPUT SIGNAL CS080SG 0 0 0 0 0 0 0 0
ANALOG Total SLC 0 0 0 0 0 0 0 0
==============================================
==============================================
PSD CONTROLLERS CE130 0 0 0 0 0 0 0
PSD CONTROLLERS CE080DLM 0 0 0 0 0 0 0 0
PSD CONTROLLERS CS065SE 0 0 0 0 0 0 0 0
PSD Total SLC 0 0 0 0 0 0 0 0
==============================================
Grand Total LSC 0 0 0 0 0 0 0 0
============================================================================
Totals for All Fabs FY97 FY97 FY97 FY97 FY98 FY98 FY98 FY98
Per Per Per Per Per Per Per Per
9 10 11 12 1 2 3 4
-----------============================================================================
Workdays 34 27 28 35 27 27 35 27
==============================================----------------------------------------------------------------------------
Starts Forecast by Fab Details: Raw by Size
==============================================
==============================================
SOUTH PORTLAND FM 4100 0 0 0 0 0 0 0 0
SOUTH PORTLAND FM 5100 0 0 0 0 0 0 0
SOUTH PORTLAND FM 6001 0 0 0 0 0 0 0 0
South Portland 0 0 0 0 0 0 0
Subtotal
SALT LAKE CITY 6-inch 0 0 0 0 0 0 0
==============================================
Grand Total 0 0 0 0 0 0 0 0
EXHIBIT D
Forecasting Timetable
-------------------------------------------------------------------------------------------------------------
Period 12 Period 1 Period 2 Period 12
-------------------------------------------------------------------------------------------------------------
Week 1 2 3 4 5 1 2 3 4 1 2 3 4 1 2 3 4 5
----------------------------------------------------------------------------------------------------------------------
1
-------------------------------------------------------------------------------------------------------------
D 2 ZA A A ZA
-------------------------------------------------------------------------------------------------------------
A 3
-------------------------------------------------------------------------------------------------------------
Y 4
-------------------------------------------------------------------------------------------------------------
5 R Y R Y R Y R Y
----------------------------------------------------------------------------------------------------------------------
Actions Defined
R National provides 8-period Forecast to
Xxxxxxxxx
Y Xxxxxxxxx provides capacity response to
National
Z National places blanket, 3-period purchase
order with Xxxxxxxxx
A National releases details of wafer starts for
the following period.
EXHIBIT E
DIE COST IMPACT SHARING
1.0 GENERAL
1.1 National and Xxxxxxxxx will implement 50:50 sharing of yield gain
and loss implemented in accordance with the principles set forth in
this Exhibit.
1.2 The yield adjustment amount will be calculated at the end of the
first six (6) fiscal periods ("Fiscal Half") from the Effective Date
and each Fiscal Half thereafter, retroactively. National will pay
Xxxxxxxxx a yield premium fee in the case of average yield
improvement; Xxxxxxxxx will reimburse National in the case of
average yield degradation.
1.3 Net Die Per Wafer (NDPW) will be used as the basis for the
calculation.
2.0 ESTABLISHING YIELD BASELINE
2.1 In order to qualify for die cost sharing, Products must (i) have
achieved a minimum production volume of at least ninety-six (96)
Wafers (i.e., the equivalent of at least four (4) 24-Wafer or eight
12-Wafer lots) per period for three (3) of the preceding six (6)
fiscal periods (a minimum of 288 Wafers) and (ii) have a stable
yield history (e.g., without known yield or test sensitivities). The
baseline NDPW of each qualifying Product as of the Effective Date
shall be the average NDPW for the preceding six (6) fiscal periods.
Baseline NDPWs will be reset twelve (12) fiscal periods ("Fiscal
Year") after the Effective Date and at the end of each Fiscal Year
thereafter.
2.2 A baseline NDPW will be established for a new Product after the
Product has achieved a minimum production volume of at least 96
Wafers per fiscal period (i.e., the equivalent of at least four (4)
24-Wafer or eight 12-Wafer lots) for three (3) of the preceding six
(6) fiscal periods (a minimum of 288 Wafers) and (ii) has
established a stable yield history (e.g., without known yield or
test sensitivities). Once a baseline NDPW has been established for a
Product and mutually agreed upon by the Parties, such baseline NDPW
will remain in effect until the next Fiscal Year reset point.
2.3 In case of a change in the sort program which affects the yield, a
new baseline NDPW will be mutually agreed upon based on the effect
of the change on the Product yield. The new baseline will apply to
all lots measured after the change has been implemented.
2.4 In the case of a Mask change which affects the yield, a new baseline
NDPW will be established as provided in Paragraph 2.2 of this
Exhibit.
2.5 For Products that are not sorted by Xxxxxxxxx the Parties will agree
on procedures to assure that production sort programs cannot be
changed without Xxxxxxxxx'x acknowledgment, and the provisions of
Paragraph 2.3 of this Exhibit shall apply to any such changes.
2.6 In order for a Product that is not sorted by Xxxxxxxxx to qualify
for die cost sharing, National must make wafer sort and yield data,
and wafers (at Xxxxxxxxx'x cost) as required for analysis, available
to Xxxxxxxxx on a timely basis and in conformance with Xxxxxxxxx'x
own internal requirements for such data.
3.0 CALCULATIONS
3.1 At the end of each Fiscal Half, a Product list to be used for the
yield adjustment calculation will be mutually agreed by the Parties.
Each Product in this list shall (i) have an established baseline
NDPW; (ii) have achieved a minimum production volume of at least
ninety-six (96) Wafers per period (i.e., the equivalent of four
24-Wafer or eight 12-Wafer lots) for three (3) of the preceding six
(6) fiscal periods (a minimum of 288 Wafers); and (iii) have
established a stable yield history (e.g., without known yield or
test sensitivities).
3.2 The percent change in NDPW for the preceding Fiscal Half will be
calculated for each qualifying Product based on the difference
between the baseline and actual NDPW for the Product;
3.3 The semiannual adjustment for die cost sharing will equal:
(Base Wafer Price) X (NDPW Percent Change) X (0.5) X (Wafers
Shipped)
3.4 The total adjustment will be the sum of the adjustments of the
qualifying Products.
3.5 Xxxxxxxxx will perform the die cost sharing calculation and provide
an accounting to National following the end of each Fiscal Half
together with an invoice or a credit for the die cost adjustment
amount.
4.0 OTHER
4.1 MYA will be used in conjunction with die cost sharing for purposes
of identifying "Maverick" wafers that will be discarded (unless
National agrees to accept). For Products that qualify for die cost
sharing, the baseline NDPW will be used as the basis for defining
the MYA for the Product.
4.2 Wafer price adjustments to reflect changes in Xxxxxxxxx'x
manufacturing cost base are independent of die cost sharing.
4.3 Products manufactured under the Mil/Aero Wafer and Services
Agreement between the Parties of even date herewith shall not
qualify for die cost sharing.
EXHIBIT F
WAFER ACCEPTANCE CRITERIA
Xxxxxxxxx Electrical Test Acceptance Method:
Acceptance of Xxxxxxxxx Wafers for shipment to National shall be determined per
mutually agreed upon electrical parameter test distribution performance with
standard test die. For the West Jordan, Utah fabs, all wafers will be subjected
to the Acceptance Criteria specified in West Jordan specifications: XXX-0000,
XX-0000 and TS-3021. For the South Portland, Maine fabs, all Wafers will be
tested to the electrical specifications, by Process, listed in this Exhibit,
with the acceptance methods stated below.
South Portland, Maine Wafer Acceptance and Wafer Sort:
1. Each lot will be sampled at PCM test prior to Wafer sort. The following
minimum sample size will be tested and the Wafer will be rejected if the
stated number, or more, of test sites on that Wafer fails a specified
electrical parameter;
Wafer Size #Wafers per lot #Sites per Wafer Reject on #Sites
Tested Failing
6 inch 5 5 3
5 inch 5 5 3
4 inch 3 5 3
2. In the event that one or more Wafers in the lot sample fail the above
criteria, then 100% testing of the remaining Wafers in the lot will be
performed and the above acceptance criteria applied to each Wafer.
3. Electrical Test parameter distributions will be made available to National
on a monthly basis.
Xxxxxxxxx Wafer Fabrication and National Wafer Sort:
1. A ten (10) Wafer lot sample will be tested to the applicable PCM
specification prior to shipment to National. Five (5) test sites per wafer
will be sampled as the basis for electrical acceptance, and three (3) of
those sites must pass the PCM test parameters. In the event that one or
more sample wafers fails the PCM tests, 100% testing of residual wafers
will be performed and all Wafers which pass the PCM will be shipped to
National.
2. Individual PCM specifications (by Process) are defined in Exhibit F.
3. Electrical Test parameter distributions will be made available on a
monthly basis.
Xxxxxxxxx Maine Fab 4100: "ANALOG"
------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement
Method
------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q2Beta 50 150 250 Gain Ic=1mA,
Vce=5.0V
Bjt NPN CBO Q2BVcbo 50 >50 N/A Volts If-10uA
Bjt NPN EBO Q2BVebo 6.5 7.0 7.5 Volts If=10uA
Bjt NPN CEO Q2LVceo 15 >15 N/A Volts If=10uA
Bjt Col to Col BV_iso 50 >50 N/A Volts If=5uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried Layer BL_RES 75 110 150 Ohms If=10mA
Diffusion Narrow Base N_RES 800 1000 1800 Ohms If=1mA
Diffusion Base BASERHO 100 125 150 Ohms/sq If=4.53mA
Diffusion Emitter N+RHO 3.0 4.5 6.0 Ohms/sq If=45.3mA
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "BUS"
--------------------------------------------------------------------------------------------------------------------------
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement
Method
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q1Beta 20 100 225 Gain Ic=1mA,
Vce=5.0V
Bjt NPN CBO Q1BVcbo 20 >20 N/A Volts If-10uA
Bjt NPN EBO Q1BVebo 6.7 8.0 8.3 Volts If=10uA
Bjt NPN CEO Q1LVceo 8.0 >8 N/A Volts If=10uA
Bjt Col to Col BV_iso 7.5 >7.5 N/A Volts If=5uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried Layer BLres1 30 45 100 Ohms If=10mA
Diffusion Narrow Base Narbase 1900 2500 2900 Ohms If=1mA
Diffusion Emitter EM-res 5.0 10 40 Ohms/sq If=10mA
--------------------------------------------------------------------------------------------------------------------------
Xxxxxxxxx Maine Fab 4100: "CGS"
Table of Parameters not available on January 2, 1997.
Xxxxxxxxx Maine Fab 4100: "DRAM"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO MinLVCEO1 5.5 20 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO MinBVCBO 18 30 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO MinBVEBO 3.5 10 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta MinBeta1 75 200 Gain
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BaseRho 562 688 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Resistor RES-RHO 1800 2200 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxx 0000XXX 2048 via link 0 155 Ohms
==========================================================================================================================
Xxxxxxxxx Maine Fab 4100: "DTCOMM
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN BETA Q3Beta 80 180 250 Gain Ic-10mA, Vce=2.5V
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CBO Q3BVcbo 38 >38 N/A Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO Q3BVebo 5.5 6.3 7.0 Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO Q3LVceo 5.0 >5 N/A Volts If=5uA
--------------------------------------------------------------------------------------------------------------------------
Bjt Col to Col BV_ISO 15 >15 N/A Volts If=100uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried R_BL 15 23 30 Ohms If=50mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Narrow Base R_NB 1650 2100 2500 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Emitter R_EM 100 150 200 Ohms If=10mA
==========================================================================================================================
Xxxxxxxxx Maine Fab 4100: "DTP"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO Q1LVCEO 7 15 30 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO Q1BVCBO 30 45 80 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO Q1BVEBO 6 6.8 7.5 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta Q1Beta 75 150 350 Gain
--------------------------------------------------------------------------------------------------------------------------
Bjt Schottky Q4VFD 0.26 0.32 0.4 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Schottky XXXXX 00 00 00 Volts
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BaseRho 160 190 220 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Collector BL-RES 75 110 135 Ohms
--------------------------------------------------------------------------------------------------------------------------
Diffusion Resistor IMP-RES 13K 16K 19K Ohms
--------------------------------------------------------------------------------------------------------------------------
Diffusion Emitter N+RHO 4.25 5 5.75 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Resistor N-RES 1250 1525 1800 Ohms
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink SINK-RES 6 8.5 11 Ohms
==========================================================================================================================
Farichild Maine Fab 4100: "LAN"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta Q3BETA Ae=4.6 sq 70 140 300 Gain Ic=10mA, Vce=2.5V
mils
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO Q3BVCBO Ae=4.6 sq >20 43 N/A Volts If=100uA
mils
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO Q3LVCEO Ae=4.6 sq >10 20 N/A Volts If=5uA
mils
--------------------------------------------------------------------------------------------------------------------------
Diff Res R_EM(R12) 0.5X10 sq 150 210 270 Ohms If=10mA
--------------------------------------------------------------------------------------------------------------------------
Diff Res R_NB(R10) 0.3X10 sq 1600 2075 2550 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Impl Res RNI_RI4 0.5X10 sq 8000 10000 12000 Ohms If=100uA
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxx XXX000 0xx x 0xx 00 00 00 Ohms If=1mA
==========================================================================================================================
Xxxxxxxxx Maine Fab 4100: "PTP"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN Beta Q3BETA 15 50 100 Gain Ic=1mA, Vce=5.0V
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CBO Q3BVCBO 10 35 100 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO Q3BVEBO 6.5 7 7.5 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO Q3LVCEO 7 35 60 Volts Ic=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt Col to Col BV_ISO 30 70 100 Volts I=5uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried BL_RES 90 115 140 Ohms I=10mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink(Plug) SINK_RES 2 12 30 Ohms I=10mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Emitter N+RHO 3.5 6 7 Ohms/sq I=4.53mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BASERHO 170 195 220 Ohms/sq I-4.53mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion Narrow Base N-RES 1250 1625 2000 Ohms I-1mA
==========================================================================================================================
Xxxxxxxxx Maine Fab 4100: "PTPCMOS"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP_SHORT -1.3 -0.85 -0.4 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Xxxx XXXXX_XXXXX -00 -00 0 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON_SHORT 0.4 0.65 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN_SHORT 18 39 60 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDP_5.0/5.0_SHORT -2 -1.5 -1 mAmps
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDN_5.0/5.0_SHORT 2 3.5 5 mAmps
--------------------------------------------------------------------------------------------------------------------------
Diffusion Xx Xx_XXX 0 0 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_RES 3 5 7 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_RES 30 55 80 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 0 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BV_GATE_OXIDE -200 -125 -50 Volts
Oxide
==========================================================================================================================
Xxxxxxxxx Maine Fab 4100: "RTCCMOS"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP_SHORT -1.5 -0.875 -0.25 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Xxxx XXXXX_XXXXX -00 -00 0 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON_SHORT 0.3 0.65 1 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN_SHORT 18 39 60 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDP_5.0/5.0_SHORT -2 -1.3 -0.6 mApms
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDN_5.0/5.0_SHORT 3 4 5 mAmps
--------------------------------------------------------------------------------------------------------------------------
Diffusion Xx Xx_XXX 0 0 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_RES 4 6.5 9 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_RES 30 55 80 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx Xx_XXXX_XXX 0 00 00 Xxxx/xxx.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BV_GATE_OXIDE -200 -125 -50 Volts
Oxide
==========================================================================================================================
Xxxxxxxxx Maine Fab 5100: "GA20"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTOP2 -1 -0.8 -0.6 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdp BVDSSP2 -20 -13.09 -7 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON2 0.6 0.75 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSSN2 7 12 20 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSP2 -0.004 -0.003 -0.0012 mAmps
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSN2 0.0032 0.005 0.0072 mAmps
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTM1M2 0 0.07 0.15 Ohms/cnt
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTMP+ 1000 7500 20000 Ohms/cnt.
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTMN+ 1000 4000 10000 Ohms/cnt.
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BVGOXP 20 24 30 Volts
Oxide
--------------------------------------------------------------------------------------------------------------------------
Yd Gate BVGOXN -30 -26 -22 Volts
Oxide
==========================================================================================================================
Xxxxxxxxx Maine Fab 5100: "ALS15"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Field vt FIELD_VT 10 25 40 Volts Id=1uA, Vg=Vd
--------------------------------------------------------------------------------------------------------------------------
Bjt PNP Beta BETA_Q7_50 6X7 Em, 3um 20 50 80 Gain Ic=50uA, Vce=2.5V
P+/P+
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN Beta LOP2B_20UA (5X32)X2 70 110 180 Gain Ic=20uA, Vce=2.0V
E-Stripes
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN EBO 20K_EBO 20K 2X2 Em grid 4 5 15 Volts Ie=10uA
--------------------------------------------------------------------------------------------------------------------------
Bjt NPN CEO AREA_CEO 500X500 Em 1 6 25 Volts Ic=10uA
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried BLR_RHO 50X50 20.5 23 27 Ohms/sq I=10mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink(Plug) SINK_RHO 48X48 13 16 20 Ohms/sq I=10mA
--------------------------------------------------------------------------------------------------------------------------
Diffusion P- P-_30X3 (L/W)30X3 1500 1650 1850 Ohms/sq V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ P+_30X3 (L/W)30X3 150 175 200 Ohms/sq V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Schottky Vf VS_D5 1300 um sq 0.51 0.54 0.58 Volts Ib-300uA
(GRring)
--------------------------------------------------------------------------------------------------------------------------
Schottky Vr VR_D5 1300 um sq 18 25 35 Volts Ic-10uA
(XXxxx)
--------------------------------------------------------------------------------------------------------------------------
Via M2 Via RES_VIACHN 90 110 130 Ohms I=1mA
--------------------------------------------------------------------------------------------------------------------------
Via P-Contact PCON_RES 100 2X2 P+ 5000 6000 7000 Ohms I=100uA
Contacts
--------------------------------------------------------------------------------------------------------------------------
Via N-Contract NCON_RES 100 2X2 Sink 180 225 300 Ohms 1=100uA
Contacts
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1SNAKE 2500 2850 3200 Ohms V=0.1V
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 2 M2SNAKE 200 275 350 Ohms V-0.1V
==========================================================================================================================
Xxxxxxxxx Maine Fab 5100: "CGSP/E"
Table of parameters to be defined.
Xxxxxxxxx Maine Fab 6001: "ABiC2L & ABiC2LM"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTO_N840 W/L 40/0.8 0.6 0.75 0.9 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDS5N840 W/L 40/0.8 0.32 0.4 0.48 mA/um Vg=Vd=5.0V, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSN840 W/L 40/0.8 7 >7 Volts Vg=Vb=Vs=GND,
Id=1uA/um
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp VTO_P840 W/L 40/0.8 0.85 1 1.15 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDS5P840 W/L 40/0.8 0.16 0.2 0.24 mA/um Vg-Vd-5.0V, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdp BVDSP840 W/L 40/0.8 7 >7 Volts Vg=Vb=Vs=GND,
Id=1uA/um
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO CEO_ECL (12-2X12)X2 6 >6 Volts Ic=500uA=1uA/um^2
E-Stripes
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO CBO_ECL (12-2X12)X2 10 >10 Volts Ic=50uA=0.1uA/um^2
E-Stripes
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO EBO_ECL (12-2X12)X2 5 >5 Volts Ie=50uA=0.1uA/um^2
E-Stripes
--------------------------------------------------------------------------------------------------------------------------
Bjt Vbe VBE_ECL (12-2X12)X2 0.75 0.8 0.85 Volts Ie-10mA Vcb-0v
E-Stripes (20uA/um^2)
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta B2C_ECL (12-2X12)X2 50 90 200 Volts Ie=10mA, Vce=2.75v
E-Stripes (20uA/um^2)
--------------------------------------------------------------------------------------------------------------------------
Poly N+ V_POLYNP VDP 66 75 84 Ohms/sq. I=5mA
Resistor
--------------------------------------------------------------------------------------------------------------------------
Poly P+ V_POLYPP VDP 238 270 320 Ohms/sq. I=5mA
Resistor
--------------------------------------------------------------------------------------------------------------------------
Poly P- V_POLYPM VDP 1190 1400 1610 Ohms/sq. I=1mA
Resistor
--------------------------------------------------------------------------------------------------------------------------
Silicide Silicided SILPPRHO VDP 1 2 3 Ohms/sq. I=5ma
P+ Poly
--------------------------------------------------------------------------------------------------------------------------
Diffusion N Buried V_CUO VDP 23.8 32.2 Ohms/sq. I=5mA
Layer
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink SINKRHO 50X10 45 65 85 Ohms/sq. I=5mA, Calculated
ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx XX_XXXXX 000 0 0 Xxxx/Xxxx I=100uA, Calculated
contacts ohms per link
--------------------------------------------------------------------------------------------------------------------------
Xxx X0 Xxx XX_XXXX 000 0 0 Xxxx/Xxxx I=1mA, Calculated
contacts ohms per link
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1_SNKT 18000 490 550 900 Ohms I-1mA, Chain
linear um Resistance
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 22LM M2_SNKT 18000 300 350 550 Ohms I=1mA, Chain
linear um Resistance
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXNWBV 90000 um^2 12 >12 Volts I=1uA
==========================================================================================================================
Xxxxxxxxx Maine Fab 6001: "ABiC3L & ABiC4L"
Table of Parameters to be defined, because process development is not
yet complete.
Xxxxxxxxx Maine Fab 6001: "ABiC52L"
Table of Parameters to be defined, because process development is not
yet complete.
Xxxxxxxxx Maine Fab 6001: "BUS & CGS10"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn VTON1 0.4 0.65 0.9 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp XXXX0 -0.00 -0.00 -0.00 Volts
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSP1 -0.014 -0.01 -0.005 mA
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat IDSSN1 0.015 0.022 0.029 mA
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn BVDSSN1 7 13 19 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CEO OUTLVCEO 4 5.7 20 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt CBO OUTBVCBO 14 19 25 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt EBO OUTBVEBO 3 4.5 5.5 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Beta OUTBETA 65 115 200 Volts
--------------------------------------------------------------------------------------------------------------------------
Bjt Schottky VCSCHOTTKY 0.2 0.34 0.475 Volts
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base BASERRES 2300 3200 3700 Ohms
--------------------------------------------------------------------------------------------------------------------------
Diffusion Buried Layer BLRHO 18 28 38 Ohms/sq.
--------------------------------------------------------------------------------------------------------------------------
Diffusion Sink XXXXXXX 00 00 00 Xxxx/xx.
--------------------------------------------------------------------------------------------------------------------------
Via Contact CONTM1M2 0 0.04 0.075 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Contact N+ Contact CONTMN+ 10 30 60 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Contact P+ Contact CONTMP+ 10 25 40 Ohms/Link
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 1 M1CONT 0 85 200 Ohms
--------------------------------------------------------------------------------------------------------------------------
Metal Rs Metal 2 M2CONTWC 0 23 70 Ohms
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide BVGOXN -20 -15.5 -12.5 Volts
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide BVGOXP 11.5 13.5 20 Volts
==========================================================================================================================
Xxxxxxxxx Maine Fab 6001: "CS080C"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn N5_VTO W/L 40/0.8 0.6 0.725 0.85 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat N5_IDSS W/L 40/0.8 13.6 16.8 20 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn N5_BVDSS W/L 40/0.8 10 13.5 17 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp P5_VTO X/X 00/0.0 -0.0 -0.00 -0.0 Volts Linear Extrapolation
(Vd=-0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat P5_IDSS X/X 00/0.0 -0.0 -0.0 -0.0 mA Vg-Vd-5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn P5_BVDSS W/L 40/0.8 -15 -12.5 -10 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1N_RES M1/N+ Chain 0 250000 500000 Ohms Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1P_RES M1/P+ Chain 0 300000 600000 Ohms Vf=-5.0v
--------------------------------------------------------------------------------------------------------------------------
Via M2 Xxx XXXXX_XXX Xxx Xxxxx 0 0000 00000 Xxxx Vf-5.0v
--------------------------------------------------------------------------------------------------------------------------
Diffusion N-Well RNW1_RES N- in 1000 2000 3000 Ohms Vf=1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion P-Well RPSUB2_RES P- in 70 110 150 Ohms Vf=-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion N+ RDIFFN1_RES N+ Diffusion 570 750 930 Ohms Vf=1v
in P-Well
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ RDIFFP1_RES P+ Diffusion 1260 1400 1580 Ohms Vf=-1v
in N-Well
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXN_BVD 99870um2 -22 -12 -10 Volts If=1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXP_BVD 99840um2 10 12 22 Volts If=1ua
Poly Cap
==========================================================================================================================
Xxxxxxxxx Maine Fab 6001: "CS080CBI"
Table of parameters to be defined.
Fairchlid Maine Fab 6001: "CS080CBTX"
==========================================================================================================================
Category Parameter Analog Device Size Lower Spec Target Upper Spec Unit Measurement Method
--------------------------------------------------------------------------------------------------------------------------
MOS Vtn N5_VTO W/L 40/0.8 0.6 0.725 0.85 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat N5_IDSS W/L 40/0.8 13.6 16.8 20 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn N5_BVDSS W/L 40/0.8 10 13.5 17 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
MOS Vtp P5_VTO X/X 00/0.0 -0.0 -0.00 -0.0 Volts Linear Extrapolation
(Vd=0.1V, Vb=Vs=GND)
--------------------------------------------------------------------------------------------------------------------------
MOS Idsat P5_IDSS X/X 00/0.0 -0.0 -0.0 -0.0 mA Vg=Vd=5.0v, Vb=Vs=GND
--------------------------------------------------------------------------------------------------------------------------
MOS Bvdn P5_BVDSS W/L 40/0.8 -15 -12.5 -10 Volts Vg=Vb=Vs=GND, Id=1uA
--------------------------------------------------------------------------------------------------------------------------
Via Contact RM1N_RES M1/N+ Chain 00 250000 500000 Ohms Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Xxx Xxxxxxx XX0X_XXX X0Xx Chain 0 300000 600000 Ohms Vf=-5.0v
--------------------------------------------------------------------------------------------------------------------------
Via M2 Xxx XXXXX_XXX Xxx Xxxxx 0 0000 00000 Xxxx Vf=5.0v
--------------------------------------------------------------------------------------------------------------------------
Diffusion N-Well RNW1_RES N-in 1000 2000 3000 Ohms Vf-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion P-Well RPSUB2_RES P-in 70 110 150 Ohms Vf=-1v
Composite
--------------------------------------------------------------------------------------------------------------------------
Diffusion N+ RDIFFN1_RES N+ 570 750 930 Ohms Vf-1v
Diffusion
in P-Well
--------------------------------------------------------------------------------------------------------------------------
Diffusion P+ RDIFFP1_RES P+ 1260 1400 1580 Ohms Vf=-1v
Diffusion
in N-Well
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXN_BVD 99870um2 -22 -12 -10 Volts If=-1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Yd Gate Oxide GOXP_BVD 99840um2 10 12 22 Volts If=1ua
Poly Cap
--------------------------------------------------------------------------------------------------------------------------
Diffusion Base RBU Vander Pau 1100 1330 1550 Ohms/Sq Calculated Ohms/sq
--------------------------------------------------------------------------------------------------------------------------
Diffusion Buried Layer RBLU Vander Pau 23 29 35 Ohms/Sq Calculated Ohms/sq
--------------------------------------------------------------------------------------------------------------------------
BJT Beta NPN1_BF100U 2.24ux2.08um 35 70 115 Ie=100uA, Vce=1.0v
--------------------------------------------------------------------------------------------------------------------------
BJT CBO NPN1_BVCBO 2.24ux2.08um 10 16.8 20 Volts Ic=1uA, Vb=GND
--------------------------------------------------------------------------------------------------------------------------
BJT EBO NPN1_BVEBO 2.24ux2.08um 5.5 5.75 6.1 Volts Ie=1uA, Vb=GND
--------------------------------------------------------------------------------------------------------------------------
BJT CEO Q1_VCEO 2.24ux2.08um 5.5 7 10 Volts Ve=-100uA, Vc=GND
==========================================================================================================================
Xxxxxxxxx Maine Fab 6001: "CS080CBIHY"
Table of Parameters to be defined, because process development
is not yet completed.
Fairchld Maine Fab 6001: "CS080CBIP
Table of Parameters to be defined, because process development
is not yet completed.
Xxxxxxxxx Maine Fab 6001: "CS080CBIVU"
Table of Parameters to be defined, because process development
is not yet completed.
EXHIBIT G
PRICES FOR WAFER SORT AND EPI PROCESSING
South Portland, Maine
Wafer Sort Cost per Hour
MCT 20xx Test Equipment $ 29.00 per hour
LTX MicroMaster Test Equipment* $ 110.00 per hour
Xxxxxxxxx Sentry 20 Test Equipment $ 400.00 per hour
*LTX Micro Master costs are based on the basis of a 60% utilization rate.
Should the utilization drop below 60%, Xxxxxxxxx reserves the right to
increase the hourly rate for this equipment.
Penang, Malaysia
Wafer Sort Cost per Hour
MCT 20xx Test Equipment $ 16.00 per hour
West Jordan, Utah
Wafer Sort Cost per Wafer
Versatest V210 $ 28.00 per hour
Non-recurring costs
Wafer sort probe cards
Standard Rhenium Tungsten $ 55.00 per blade
Blades
Minimum total charge $ 800.00
Epoxy type probe card $ 40.00 per blade
Minimum total charge $ 3,000.00
Sort Operating Principles
XXXXXXXXX will load the South Portland, Maine, West Jordan, Utah and Penang,
Malaysia Wafer Sort facilities in a manner that minimizes the total costs to
NATIONAL, while generating the best possible yield control for NATIONAL
Products. This means that Penang will be the primary sorting site for those
Products which can be sorted there, unless otherwise instructed by NATIONAL.
on a case by case basis, XXXXXXXXX will provide NATIONAL the opportunity to
install NATIONAL's automatic test equipment within XXXXXXXXX'x Facilities, which
might be required to take advantage of XXXXXXXXX'x Integrated Yield Management
services. XXXXXXXXX will quote hourly rates for operations, maintenance and
support services, and NATIONAL will assume the costs of equipment depreciation,
spare parts, initial setup, probe cards, and electrical interface boards.
New sort hardware setups or Wafer sort for new Products
In the case of new hardware setups or Wafer sort for new Products, if the
hardware and/or test program is provided by National, Xxxxxxxxx will connect the
hardware and/or test program and attempt to sort wafers. If engineering problems
are found then Xxxxxxxxx will debug and solve the problems to the extent of its
capabilities utilizing Best Efforts.
Epitaxial Layer Processing
Epi for CS080AB or CS080SB $46.00 per wafer
EXHIBIT J
OPERATIONAL SUPPORT SERVICES AND FEES
The following Operational Support Services can be provided by Xxxxxxxxx to
National for a fee. If no fee is stated it will be negotiated by the Parties at
a future date.
Production Control Management and Scheduling for National Product lines
Mask Making Services: Price
--------------------- -----
Prefracture Edits to Database $ 1,000 per database
Reticle Generation 500 per reticle set
Database Fracture 150 per level, per database
Product Specific Test Pattern Modules 4,500 per standard 20-pin module
DRC Verification, up to 20 hours effort 3,000 per database
for time in excess of 20 hours 100 per hour
Database Conversion and Boolean 10,000 per database
Operations
for time in excess of 50 hours 200 per hour
Mathematical Modeling and
Characterization Services:
--------------------------
Price Per Hour Minimum
-------------- -------
Process Circuit Model File $150 $2,400
Generation
Analog Specific Parameter 150 2,400
Information
Enhanced Electrical Testing 100
for New Designs
Geom-Gen and Cadence Symbol 150 2,400
Generation
Automatic Test Equipment
Development Services:
---------------------
Price per hour Minimum
-------------- -------
MCT20xx Test Program Creation $150 2,400
MCT20xx Custom Test Solution Negotiated Fee
Development
Test Program Port to LTX 150 2,000
MicroMaster System
Integrated Yield Management Services $150 per hour
------------------------------------
Semiconductor Electrical Failure Analysis Services
Price Per hour
--------------
Capability (Unless otherwise stated)
----------
Device Analysis
1. Micro probing, circuit analysis, leakage $ 150
detection and fault identification
2. Device de-layering in conjunction with
electrical Failure Analysis $ 150
Material Analysis
1. Polished cross sections $ 150
2. Transmission Electron Microscopy (TEM) sample $ 175
preparation
3. TEM analysis $ 300
4. Field Emission SEM analysis with EDX $ 180
5. Scanning Electron Microscopy (SEM) analysis with $ 150
EDX
6. Secondary Ion Mass Spectroscopy (XXXX) analysis $ 350
7. Materials composition analysis (Auger analysis) $ 250
Priority processing:
The standard charges above are for failure analysis completion within twelve
(12) calendar days of receipt by Xxxxxxxxx.
Expedited analysis (move to the top of the queue) is available at a 100%
surcharge.
The Parties agree that the minimum charge for failure analysis will be four (4)
hours per job (any combination of service) or $450, whichever is greater.
Xxxxxxxxx may accept National analysis work from other non-Xxxxxxxxx wafer
facilities, based on workload and analysis complexity.
EXHIBIT K
CYCLE TIME AND EXPEDITED PROCESSING
HOT LOT CYCLE TIMES AND PRICING
Fiscal Year 1998 Wafer Processing Cycle Times (in Days)
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
West Jordan, Utah Fab:
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
CE80 XXX 00 00 00
XX00 XXX 55 39 26
CS100P 50 35 24
CS100HE2 60 42 28
CS08OSG 48 34 23
CS08OSG3 60 42 25
CS65SE 60 42 24
South Portland, Maine Fab:
Standard Hot Lot Super Hot
Process cycle time cycle time cycle time
------- ---------- ---------- ----------
CS80C 42 29 23
CS80CBTX 52 36 28
CS80CBI 52 36 28
ABiC IV 2LM 58 44 36
ABiC IV 4LM 70 51 42
Interface Xxxxxxx 00 00 00
Xxxxx Xxxx CMOS 13 10 8
National will be charged a premium per hot lot started as follows:
for Hot Lots, the premium will be $4,000. per lot
for Super Hot Lots, the premium will be $10,000. per lot
The standard lot sizes of 12 or 24 Wafers will apply.
EXHIBIT L
1. Prices for Wafers manufactured in the six-inch fab in South Portland,
Maine will be determined as follows. Shortly prior to the conclusion of
the first six (6) fiscal periods under this Agreement ("Fiscal Half"), the
Parties shall meet in order to determine new prices for the Second Fiscal
Half. At that meeting the Parties will review the manufacturing history
during such part of the First Fiscal Half for which such information shall
be available in order to determine Xxxxxxxxx'x actual manufacturing cost
base for that Wafer Module which shall be consistent with National's
standard cost accounting practices in effect as of the Effective Date,
(the "Class 1 Reference Cost Base"). If the Class 1 Reference Cost Base
plus a twenty-five percent (25%) markup, is less than the price applicable
for the first Fiscal Half, prices for the second Fiscal Half will be equal
to the Class 1 Reference Cost Base plus a twenty-five percent (25%)
markup. If Xxxxxxxxx'x actual costs have increased, the prices will remain
the same. Exhibit N sets forth the prices for Wafers to be manufactured in
the South Portland, Maine six-inch fab during the next twenty-seven (27)
fiscal periods of this Agreement based on the forecast volumes. For
different volumes, the prices may vary as set forth in the Revenue Side
Letter.
2. Prices for Wafers manufactured on the four and five-inch fabs in South
Portland, Maine and the West Jordan, Utah fab will be determined as
follows. Shortly prior to the conclusion of the first Fiscal Half, the
Parties shall meet in order to determine new prices for each of the
aforementioned Wafer Modules for the second Fiscal Half. At that meeting
the Parties will review the manufacturing history during such part of the
first Fiscal Half for which such information shall be available in order
to determine each Wafer Module's actual manufacturing cost base which
shall be consistent with National's standard cost accounting practices in
effect as of the Effective Date, (the "Reference Cost Base" per applicable
Wafer Module). For each Wafer Module, if the Reference Cost Base plus a
twenty-five percent (25%) markup is less than the price applicable for the
first Fiscal Half, prices for the second Fiscal Half for that Wafer Module
will be equal to its Reference Cost Base plus a twenty-five percent (25%)
markup. If Xxxxxxxxx'x actual costs have increased, the prices for Wafers
manufactured in that Wafer Module will remain the same as during the first
Fiscal Half.
The applicable Reference Cost Base and second Fiscal Half prices will
remain in effect for each of the aforementioned Wafer Modules for the
remaining term of this Agreement. Shortly prior to the conclusion of the
eighteenth (18th) fiscal period of this Agreement, and every six (6)
fiscal periods thereafter, the Parties shall meet in order to determine
Xxxxxxxxx'x actual manufacturing costs for the preceding Fiscal Half which
shall be consistent with National's standard cost accounting practices in
effect as of the Effective Date. If a Wafer Module's actual costs during
the previous Fiscal Half were lower than its Reference Cost Base, the
Parties shall calculate what National would have paid if such actual costs
had been used in originally setting the prices, rather than the applicable
Reference Cost Base. Xxxxxxxxx shall give National a credit equal to fifty
percent (50%) of the savings National would have realized if it had paid
the recalculated prices. No monies will be owing to or from National or to
or from Xxxxxxxxx if Xxxxxxxxx'x actual costs during
the preceding Fiscal Half were higher than the applicable Reference Cost
Base.
3. The prices for any Wafers or Equivalent Wafers purchased during a National
fiscal year in excess of the Forecast Volumes are set forth in Exhibit N.
4. If National does not place orders for Wafers or Equivalent Wafers in
accordance with the Forecast Volumes during any National fiscal year, the
provisions of the Revenue Side Letter will apply with respect to the
manner in which National will discharge its commitment to Xxxxxxxxx for
that fiscal year.
5. Pricing for any extension and/or ramp-down period beyond the first
thirty-nine (39) fiscal periods of this Agreement will be negotiated in
good faith by the Parties.
Exhibit M
04-97
-----
Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 4.3 1.00 4.3 14.7% 1.9
CS80CBTX 9.6 1.27 12.2 41.7% 5.4
CS80C81 0.7 1.46 1.0 3.5% 0.5
ABIC 1.9 1.65 3.1 10.7% 1.4
Total NBC 15.5 20.6 70.6% 9.2
FSC 8.6 1.00 8.6 29.4% 3.8
Total 6" Fab 25. 29.2 100.0% 13.0
FY98
----
CS080C 24.6 1.00 24.6 24.6% 13.2
CS80CBTX 20.0 1.27 25.4 25.4% 13.6
CS80CBI 3.9 1.45 5.7 5.6% 3.0
ABIC 8.3 1.65 13.7 13.7% 7.3
Total NSC 56.8 69.4 69.2% 37.1
FSC 30.8 1.00 30.8 30.8% 16.5
Total 6" Fab 87.5 100.2 100.0% 53.6
FY99
----
Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 0.0 1.00 0.0 0.05% 0.0
CS80CBTX 6.0 1.27 7.6 6.7% 3.6
CS80CBI 16.5 1.45 23.9 21.2% 11.4
ABIC 23.5 1.54 38.8 34.3% 18.4
Total NSC 46.0 70.3 62.3% 33.4
FSC 42.6 1.00 42.6 37.7% 20.2
Total 6" Fab 88.6 112.9 100.0% 53.6
FY00
----
Water Equiv Equiv Fixed
Starts Factor Wafers % of Feb Ovhd
------ ------ ------ -------- ----
CS080C 0.0 1.00 0.0 0.0% 0.0
CS80CBTX 0.0 1.27 0.0 0.0% 0.0
CS80CBI 20.1 1.45 29.1 23.5% 12.6
ABIC 27.4 1.65 45.2 36.4% 19.5
Total NSC 47.5 74.4 59.9% 32.1
FSC 49.8 1.00 49.8 40.1% 21.5
Total 6" Fab 97.3 124.2 100.0% 53.6
Exhibit N
====================================================================================================
FY97 FY98 FY99 FY00
-----------------------------------------------------------------------------------------------
Q4 Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year
====================================================================================================
South Portland
--------------
Includes EPI where
applicable
------ ------ ------
BCT1.0 Price 1,008 1,008 1,008 1,008 1,008 1,008 892 892 892 892 892 791 791 791 791 791
Starts 0.6 -- -- --
Revenue 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
CS80C Price 1,008 1,008 1,008 1,008 1,008 1,008 892 892 892 892 892 791 791 791 791 791
Starts 3.7 6.4 5.9 6.4 5.9 24.6 -- --
Revenue 3.5 5.9 5.5 5.9 5.5 22.8 -- -- -- -- -- -- -- -- -- --
CS80CBTX Price 1,252 1,252 1,252 1,252 1,252 1,252 1,106 1,106 1,106 1,106 1,106 977 977 977 977 977
Starts 9.6 6.1 3.9 6.0 3.9 19.9 1.2 1.5 1.7 1.6 6.0 --
Revenue 10.8 6.9 4.4 6.8 4.4 22.4 1.2 1.5 1.7 1.6 6.0 -- -- -- -- --
CS809CBi Price 1,416 1,416 1,416 1,416 1,416 1,416 1,247 1,247 1,247 1,247 1,247 1,100 1,100 1,100 1,100 1,100
Starts 0.7 0.9 1.0 1.0 1.0 3.9 4.1 4.1 4.1 4.2 16.5 5.0 5.0 5.0 5.0 20.1
Revenue 0.9 1.1 1.3 1.3 1.3 5.0 4.6 4.6 4.6 4.7 18.5 5.0 5.0 5.0 5.0 19.9
ABiC 2LM Price 1,597 1,597 1,597 1,597 1,597 1,597 1,405 1,405 1,405 1,405 1,405 1,239 1,239 1,239 1,239 1,239
Starts 1.9 2.0 2.1 2.0 2.1 8.2 4.6 5.5 6.2 7.2 23.5 6.9 6.9 6.9 6.9 27.6
Revenue 2.7 2.8 3.0 2.8 3.0 11.7 5.8 6.9 7.8 9.0 29.4 7.6 7.6 7.6 7.6 30.4
ABiC 4LM Price 2,010 2,010 2,010 2,010 2,010 2,010 1,778 1,778 1,778 1,778 1,778 1,576 1,576 1,576 1,576 1,576
Starts 2.0 -- -- --
Revenue 0.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
TOTAL Class ASP 1,250 1,212 1,217 1,213 1,217 1,214 1,296 1,298 1,301 1,309 1,301 1,172 1,172 1,172 1,172 1,172
1
Starts 16.7 15.4 12.9 15.4 12.9 56.6 9.9 11.1 12.0 13.0 46.0 11.9 11.9 11.9 11.9 47.7
Revenue 18.8 16.8 14.1 16.8 14.1 61.9 11.5 13.0 14.0 15.3 53.9 12.6 12.6 12.6 12.6 50.3
Comm'l 4100 Price/4" 143 413 143 143 143 143 143 143 143 143 143 143 143 143 143 143
4" 36.5 36.5 36.5 36.5 36.5 145.9 30.9 30.9 30.9 30.9 123.7 26.2 26.2 26.2 26.2 104.7
Starts
6" equiv 16.2 16.2 16.2 16.2 16.2 64.8 13.7 13.7 13.7 13.7 55.0 11.6 11.6 11.6 11.6 46.5
Revenue 5.0 5.0 5.0 5.0 5.0 19.8 4.2 4.2 4.2 4.2 16.8 3.6 3.6 3.6 3.6 14.2
Comm'l 5100 Price/5" 222 222 222 222 222 222 222 222 222 222 222 222 222 222 222 222
5" 0.7 0.2 0.2 0.2 0.2 0.9 0.2 0.2 0.2 0.2 0.7 0.1 0.1 0.1 0.1 0.6
Starts
6" equiv 0.5 0.2 0.2 0.2 0.2 0.6 0.1 0.1 0.1 0.1 0.5 0.1 0.1 0.1 0.1 0.4
Revenue 0.1 0.0 0.0 0.0 0.0 0.2 0.0 0.0 0.0 0.0 0.2 0.0 0.0 0.0 0.0 0.1
Subtotal FM 6" 33.4 31.8 29.3 31.8 39.2 122.0 23.8 25.0 25.9 26.9 101.5 23.7 23.7 23.7 23.7 94.6
fabs Starts
Revenue 23.9 21.8 19.1 21.8 19.1 81.9 15.8 17.2 18.3 19.5 70.8 16.2 16.2 16.2 16.2 64.7
TE-EPI Price 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46
Starts 25.8 19.8 19.8 19.8 19.8 79.2 4.0 4.0 4.0 4.0 16.0 1.0 1.0 1.0 1.0 4.0
Revenue 1.2 0.9 0.9 0.9 0.9 3.6 0.2 0.2 0.2 0.2 0.7 0.0 0.0 0.0 0.0 0.2
------ ------ ------
Exhibit N
====================================================================================================
FY97 FY98 FY99 FY00
-----------------------------------------------------------------------------------------------
Q4 Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year Q1 Q2 Q3 Q4 Year
====================================================================================================
Salt Lake
---------
------ ------ ------
CS100E2 Price 848 848 848 848 848 848 797 797 797 797 797 749 749 749 749 749
Starts 1.3 2.1 2.1 2.1 2.1 8.5 1.2 1.2 1.2 1.2 4.7 -- -- -- -- --
Revenue 1.0 1.7 1.7 1.7 1.7 6.6 0.9 0.9 0.9 0.9 3.5 -- -- -- -- --
CE130 Price 627 627 627 627 627 627 589 589 589 589 589 554 554 554 554 554
Starts 0.9 -- -- -- -- -- -- -- -- -- -- --
Revenue 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
CE80 Price 669 669 669 669 669 669 628 628 628 628 628 591 591 591 591 591
Starts 1.3 2.4 2.4 2.4 2.4 9.6 0.6 0.6 0.6 0.6 2.2 -- -- -- -- --
Revenue 0.8 1.5 1.5 15. 1.5 1.5 5.9 0.3 0.3 0.3 1.3 -- -- -- -- --
CS80SG Price 1,7891,789 1,789 1,789 1,789 1,789 1,682 1,682 1,682 1,682 1,682 1,581 1,581 1,581 1,581 1,581
Starts 0.1 0.1 0.1 0.1 0.1 0.4 -- -- -- -- -- -- -- -- -- --
Revenue 0.2 0.2 0.2 0.2 0.2 0.7 -- -- -- -- -- -- -- -- -- --
CS65 Price 2,1412,141 2,141 2,141 2,141 2,141 2,013 2,013 2,013 2,013 2,013 1,892 1,892 1,892 1,892 1,892
Starts -- 0.3 0.3 0.3 0.3 1.0 0.0 0.0 0.0 0.0 0.1 -- -- -- -- --
Revenue -- 0.5 0.5 0.5 0.5 2.0 0.1 0.1 0.1 0.1 0.2 -- -- -- -- --
CE80DLM Price 755 755 755 7557 755 755 710 710 710 710 710 667 667 667 667 667
Starts
Revenue
TOTAL SL Revenue 773 864 864 864 864 864 782 782 782 782 782 n/a n/a n/a n/a n/a
Starts 3.5 4.9 4.9 4.9 4.9 19.5 1.8 1.8 1.8 1.8 7.0 -- -- -- -- --
Revenue 2.4 3.8 3.8 3.8 3.8 15.2 1.2 1.2 1.2 1.2 5.0 -- -- -- -- --
------ ------ ------
--------------------------------------------------------------------------------------------------------------------------
Prices for incremental volumes above the forecasted volumes will be priced per table:
-------------------------------------------------------------------------------------
Xxxxx Xxxxxxxx 0" commercial $ 70
5" commercial $110
6" fab
ABiC2LM $825
CS80CBTX $635
CS80CBI $705
CS80C $500
BCT1.0 $705
ABiC4LM $1,000
--------------------------------------------------------------------------------------------------------------------------
EXHIBIT O
PRINCIPLES OF MANUFACTURING
o Forecasted volumes will be supplied covering all aspects of activity for 3
years.
o National will meet a Revenue commitment of $330m over 3 years and 3
months, effective the day of closing of the purchase agreement.
o Price will be fixed for the first 6 months. Pricing will reflect
National's full absorption of the fixed cost based on its percent
utilization of the Xxxxx Xxxxxxxx, Xxxxx 0" facility (i.e., this
incorporates the agreed equivalency factors).
o Principles will be set to establish pricing for the second 6 months.
o Cost base for FM Class 1 will be Q4 Forecast FY97 with a fully capitalized
base.
o National will pay a xxxx up of 25% in the first 12 months.
o For Class 1 the pricing after the initial 12 months is targeted to decline
12% or better given equal loadings in each subsequent interval. If the
volume is greater price reduction will be increased accordingly.
o Incremental volumes above the forecast volumes will be priced per table:
4" = $ 70
5" = $110
6" ABIC $825
CBTX $635
CBI $705
CS80 $500
o Available incremental capacity will be at the same rate as the base.
o Pricing activity beyond Fiscal Year 00
- In case the Parties are unable to agree on prices for the following
year, the prices used in the previous year will remain in effect,
and the Parties will be allowed to reduce the capacity commitment
each quarter by a quantity of 20%, starting one quarter after the
price agreements expire. A notice shall be given 90 days prior to
any capacity reduction.
o For the Class 100 and the Penang Assembly and Test Facilities the price
after the initial 12 months commitment will be at cost plus 25%. If the
actual cost is better than the agreed upon base a credit will be given to
National in the subsequent Fiscal Half equal to 50% of the savings. If the
cost is greater than the agreed upon base, the price will be at the agreed
upon base.
