November 23, 2005
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November 23, 2005
University
of Delaware
Xxxxxx, XX 00000
Dear Sir or Madam:
The purpose of this letter is to set forth certain understandings and agreements between the University of Delaware ("UD"), ITN Energy Systems, Inc. ("ITN") and Ascent Solar Technologies, Inc. ("AST"). For purposes of this Agreement, UD, ITN and AST may be referred to collectively as the "Parties."
1. Patent Licenses. UD will grant AST a non-exclusive license to the patents listed on Exhibit A when a reasonable royalty for such patents has been agreed upon between UD and AST.
2. Preferred Research Partner. Since it is to the advantage of all Parties to further the development of technologies based on the discoveries described in these patents listed in Exhibit A, and since such endeavors would benefit from the participation of the Institute of Energy Conversion ("IEC") at UD where these discoveries were made, IEC will be the preferred research partner for any of ITN's or AST's CIGS PV research and development contracts.
3. Joint Bids. Where appropriate, the IEC, ITN, and AST shall jointly bid on government CIGS PV research and development contracts.
If this letter agreement is acceptable, please so indicate by signing in the space provided below and returning via telecopy to the undersigned.
Very truly yours, |
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ITN Energy Systems, Inc. |
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By: |
/s/ XXXXXXXX XXXXX Xxxxxxxx Xxxxx, Executive Vice President |
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Ascent Solar Technologies, Inc. |
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By: |
/s/ XXXXXXX X. XXXXXX Xxxxxxx X. Xxxxxx, President |
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Accepted:
University of Delaware
By: |
/s/ XXXXXX XXXXXXXX Xxxxxx Xxxxxxxx, Director, IEC |
Exhibit A
CIGS patents at IEC
| Xxx# |
Issued |
Author(s) |
Title |
Assignee |
||||
|---|---|---|---|---|---|---|---|---|
| US 6,310,281 | 10/30/01 | WENDT, HANKET, XXXXXXXX, XXXXXXX, XXXXXXXX | Thin Film, Flexible PV Module | Global Solar, UD added subsequently | ||||
US 6,372,538 |
4/17/2006 |
WENDT, HANKET, XXXXXXXX, XXXXXXX, XXXXXXXX |
Fabrication of Thin Film, Flexible PV Module |
Global Solar, UD |
||||
US 6,537,845 |
8/31/2005 |
XXXXXXXXXX, SHAFARMAN |
Chemical Surface Deposition of Ultra Thin Semiconductors |
UD |
||||
US 6,562,405 |
5/13/03 |
ESER, HANKET |
Multiple-nozzle Thermal Evaporation Source |
UD |
||||
SN 60/620,352 |
Filed 10/21/04 |
ESER, FIELDS |
Formation of Selenide, sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates |
UD |
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