EXHIBIT 10.8
Contract
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This is an extension of the November 15, 1996, process development agreement
between Sony Semiconductor of America and Lanstar Semiconductor Inc. This is in
addition to the terms and conditions of that agreement.
Lanstar Semiconductor Inc. and Sony Semiconductor of America will jointly
develop 0.35 micron processes for DRAMs using shallow trench isolation,
nonoverlap contacts, high aspect ratio poly and dielectric etch processes
(approximately 6:1), TIN barriers, CMP planarization of dielectric and tungsten,
three levels of poly, two levels of metal, and ONO dielectric for the cell
capacitor.
Agreement
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The term of this agreement will be 8 months starting on April 15, 1997, and
ending December 31, 1997.
Offer
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Lanstar will supply computer simulation of the processes and direct engineering
support as required. Additionally Lanstar will supply reticles for 4 and 16 Meg
DRAMs.
Sony will use best efforts to provide engineering and silicon processing as
required to produce a working process for introduction into pilot production by
September 15, 1997. Where practical, Sony will make use of its present
equipment set for this development activity. Where new equipment that is not in
Sony's planned technologies, Lanstar will assist Sony by leasing equipment until
development period has expired.
Consideration
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Lanstar will pay Sony forty thousand USD ($40,000) per month net 30 days for a
total of three hundred sixty thousand USD ($360,000) with first payment due May
15, 1997, and the last due January 15, 1998.
s/Xxxxxxx Xxxxxx
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Xxxxxxx Xxxxxx
6/13/97
Contractual Capacity
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Lanstar will use Sony's manufacturing capabilities to produce these devices
(0.35 micron, 4 and 16 Meg EDO DRAMS) during this development activity. Terms
and conditions are to be those found in the original foundry agreement. During
and following this development phase, the option to take the production to
alternate factories will be given to Lanstar and price per wafer will be
renegotiated.
Acceptance
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/s/ Xxxxxx Xxxxxxx Date: 5/23/97
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Xxxxxx Xxxxxxx
President & COO
Lanstar Semiconductor Inc.
/s/ Xxxxx X. Xxxxx Date: 5/23/97
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Xxxxx X. Xxxxx
Chairman & CEO
Lanstar Semiconductor Inc.
/s/ Xxxxxxx Xxxxxx Date: 6/13/97
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Xxxxxxx Xxxxxx
Xx. Vice President
Sony Semiconductor Company of America
San Antonio Operations
