EXHIBIT 10.7
Contract
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This is an extension of the November 15, 1996 process development agreement
between Sony Semiconductor of America and Lanstar Semiconductor Inc. This is
in addition to the terms and conditions of that agreement.
Lanstar Semiconductor Inc. and Sony Semiconductor of America will jointly
develop 0.35 micron PROCESSES FOR DRAMS using shallow trench isolation, non
overlap contacts, high aspect ratio poly and dielectric etch processes
(approximately 6:1), TIN barriers, CMP planarization of dielectric and
tungsten, three levels of poly, two levels of metal, and ONO dielectric for
the cell Capacitor.
Agreement
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The term of this agreement will be 8 months starting on April 15, 1997 and
ending December 31, 1997.
Offer
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Lanstar will supply computer simulation of the processes and direct
engineering support as required. Additionally Lanstar will supply reticles
for 4 And 16 Meg DRAMs,
Sony will use best efforts to provide engineering and silicon processing as
required to produce a working process for introduction into pilot production
by September 15, 1997. Where practical, Sony will make use of its present
equipment set for this development activity. Where new equipment that is not
in Sony's planned technologies, Lanstar will assist Sony by leasing
equipment until development period has expired.
Consideration
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Lanstar will pay Sony forty thousand USD ($40,000) per month net 30 days for
a total of three hundred and sixty thousand USD ($360,000) with first
payment due May 15, 1997 and the last. due January 15, 1998.
Contractual Capacity
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Lanstar will use Sony's manufacturing Capabilities to Produce these
devices (0.35 micron, 4 and 16 Meg EDO DRAMs) during this development
activity. Terms and conditions are to be those round in the original
foundry agreement. During and following this development phase the option
to take the production to alternate factories will be given to Lanstar and
price per water will be renegotiated
Acceptance
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Date:
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Xxxxxx Xxxxxxx
president & COO
Lanstar Semiconductor, Inc.
Date:
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Xxxxx Xxxxx
Chairman & CEO
Lanstar Semiconductor, Inc.
Date:
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Xxxxxxx Xxxxxx
Xx. Vice President
Sony Semiconductor Company of America
San Antonio Operations
