LOAN AGREEMENT dated October 5, 2007 between Chartered Semiconductor Manufacturing Ltd. and Japan Bank for International Cooperation and the financial institutions listed on the signature page hereofLoan Agreement • November 7th, 2007 • Chartered Semiconductor Manufacturing LTD • Semiconductors & related devices
Chartered Semiconductor Manufacturing Ltd., registered in the commercial register of Singapore under 198703584K (hereinafter referred to as the “Borrower”),
CITIBANK, N.A. 388 Greenwich Street New York, New York 10013Deposit Agreement • November 7th, 2007 • Chartered Semiconductor Manufacturing LTD • Semiconductors & related devices • New York
Reference is made to the Deposit Agreement, dated as of November 4, 1999 (the “Deposit Agreement”), by and among Chartered Semiconductor Manufacturing Ltd., a company incorporated under the laws of the Republic of Singapore (the “Company”), Citibank, N.A., as Depositary (the “Depositary”), and all Holders and Beneficial Owners of American Depositary Shares (“ADSs”) evidenced by American Depositary Receipts (“ADRs”) issued thereunder, each ADS representing ten (10) ordinary shares (the “Shares”) of the Company. Capitalized terms used herein without definition shall have the meaning assigned thereto in the Deposit Agreement.
