AMENDMENT to the AGREEMENT FOR WAFER PRODUCTION AND TESTING Between Advanced Power Technology and Infineon Technologies Austria AG Siemensstr. 2, 9500 Villach, Austria

Exhibit 10.37

AMENDMENT to the

AGREEMENT FOR WAFER PRODUCTION AND TESTING

Between

Advanced Power Technology

000 X.X. Xxxxxxxx Xxxxxx, Xxxx, Xxxxxx, XXX

and

Infineon Technologies Austria AG

Xxxxxxxxxx. 0, 0000 Xxxxxxx, Xxxxxxx

This Amendment is effective as of the 1st day of July, 2005 and remains in effect through June 30th, 2006.

WHEREAS, Advanced Power Technology (hereinafter “APT”) and Siemens Aktiengesellschaft (hereinafter “Siemens”) entered into the Agreement for Wafer Production and Testing on February 11,1998 (hereinafter “Basic Agreement”);

WHEREAS, the Basic Agreement was amended in the Amendment to the Agreement for Wafer Production and Testing (hereinafter “Amendment”) between APT and Infineon Technologies AG, Munich, Germany, the latter being the legal successor of Siemens, on July 19, 2000 (both Agreements to be referred hereafter as “Agreements”); The primary purpose of the amendment being to

• agree to a more formal set of communications for all matters relative to these agreements.

• fix capacity by month committed to APT in terms of Wafer Starts Per Week (wspw) thru September 2001.

• fix wafer/die pricing through September 2001 on a [ * ] wspw basis and establish annual negotiations thereafter.

• express Infineon’s consent to have the amendment filed with the US SEC.

WHEREAS, both Agreements were amended February 5, 2001 by an Extension Agreement (also to be referred to hereafter as “Agreements”); The primary purpose of this amendment being to

• extend the scope of the Agreement to include APT’s MOSVI and MOSVII technologies and deliver wafers to APT based on these processes accordingly;

WHEREAS, both Agreements were amended January 1, 2002

• revised wafer/die pricing for wafer/die shipments to APT during Calendar Year (CY) 2002. (January 1, 2002 thru December 31, 2002)

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

• a minimum wspw volume guarantee by APT.

• an additional price reduction opportunity for APT in the form of a rebate if the total number of wafers started in CY2002 meets or exceeds a predetermined quantity.

WHEREAS, the previous agreements were amended on January 6, 2003 to

• extend the scope of the Agreements to include APT’s MosVII IGET technology and deliver wafers processed to a mutually agreed upon process flow to APT based on these processes accordingly

• agree that during the transfer period of the MosVII IGBT process a cost of [ * ] will be shared [ * ] between APT and Infineon, billed to APT on a monthly basis.

WHEREAS, the previous agreements and amendments are assigned from Infineon Technologies AG, Munich, Germany, to lnfineon Technologies Austria AG (hereinafter “lnfineon Austria”)

WHEREAS, the previous agreements were amended effective April 1, 2004 to

• agree on MosV die prices and Mos6&7 wafer prices.

• Re-establish APT start and Infineon capacity commitments

NOW, THEREAFTER, based on mutual promises contained herein and intending to be legally bound, the parties agree to the following terms and conditions:

1. Die prices for MosV technology effective July 6, 2005 are reflected in Exhibit A.

2. Die prices are established for Mos VII & Mos VII IGBT effective July 6, 2005 as reflected in Exhibit A

3. Requirement for [ * ] wafer starts per week for MOSVI/VII as agreed in the amendment effective May 2001, section 3.1 is hereby waived. Total start requirements for APT is defined in Section 4 below.

4. The Minimum Volume Commitment of APT stays at [ * ] wspw and start rules guided by the first week starts being fixed, the next 7 weeks allowed delta being [ * ], the following 5 weeks allowed delta being [ * ], and no limits to the % delta after that, apply.

5. Infineon Austria will use commercially reasonable efforts to support APT’s requirements in the event that a weekly capacity of more than [ * ] wspw is required within the rules of forecast changes defined in paragraph 4 above.

6. Key Account Manager charges are terminated.

7. In case no agreement can be achieved during the next annual negotiation by the end of

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

June 2006 the prices and volumes based on the latest confirmed monthly forecast will continue to apply. Prices then in existence are those in place at the time of that annual negotiation, the volumes confirmed in the latest monthly forecast define the maximum capacity commitment of Infineon to APT for the consecutive 6 months beginning July 1, 2006 and will be [ * ] wspw for following 6 months. During this period APT agrees to start a minimum of [ * ] WSPW including wafers started on a “risk basis” as defined in prior agreements.

MISCELLANEOUS

7. Infineon Austria hereby expressly gives its consent to have this agreement filed with the US SEC with the understanding that confidential information such as that related to pricing, volume, and other special arrangements be omitted.

S. Except as otherwise explicitly amended in paragraphs 1 to 6 above, the terms and conditions of the Basic Agreement and its prior Amendments shall remain in full force and effect.

ADVANCED POWER TECHNOLOGY

INFINEON TECHNOLOGIES Austria AG

By

Xxxxxxx Xxxxxxxx

By

Xxxxxxx Xxxxxxxx

Date

Date

By

Xxxxx Xxxxxxxx

By

Xxxxxx Xxxxxxx Xxxx

Date

Date

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

EXHIBIT A

DIE BASED PRICING

APT				Die Price		Die Price
MOS V		Infineon		effective		effective
Type		Type		1-Jun-04		6-Jul-05
515-040		C9000A00411		[ * ]		[ * ]
515-050		C9000A00511		[ * ]		[ * ]
515-060		C9000A00611		[ * ]		[ * ]
596-080		C9001A00811		[ * ]		[ * ]
566-040		C9002A00411		[ * ]		[ * ]
566-050		C9002A00511		[ * ]		[ * ]
566-060		C9002A00611		[ * ]		[ * ]
576-080		C9003A00811		[ * ]		[ * ]
576-100		C9003A01011		[ * ]		[ * ]
576-120		C9003A01211		[ * ]		[ * ]
5F6-010		C9004A00111		[ * ]		[ * ]
5F6-020		C9004A00211		[ * ]		[ * ]
5F6-030		C9004A00311		[ * ]		[ * ]
546-040		C9005A00411		[ * ]		[ * ]
546-050		C9005A00511		[ * ]		[ * ]
546-060		C9005A00611		[ * ]		[ * ]
5K6-010		C9006A00111		[ * ]		[ * ]
5K6-020		C9006A00211		[ * ]		[ * ]
5K6-030		C9006A00311		[ * ]		[ * ]
556-040		C9007A0041 1		[ * ]		[ * ]
556-050		C9007A00511		[ * ]		[ * ]
556-060		C9007A00611		[ * ]		[ * ]
586-080		C9008A00811		[ * ]		[ * ]
586-100		C9008A01011		[ * ]		[ * ]
586-110		C9008A01211		[ * ]		[ * ]
586-120		C9008A01211		[ * ]		[ * ]
5F7-040		C9009A00411		[ * ]		[ * ]
5F7-050		C9009A00511		[ * ]		[ * ]
5F7-060		C9009A00611		[ * ]		[ * ]
547-010		C9010A00111		[ * ]		[ * ]
547-020		C9010A00211		[ * ]		[ * ]
547-030		C9010A00311		[ * ]		[ * ]
527-040		C9011A00411		[ * ]		[ * ]
527-050		C9011A00511		[ * ]		[ * ]
527-060		C9011A00611		[ * ]		[ * ]
557-080		C9012A00811		[ * ]		[ * ]
557-100		C9012A01011		[ * ]		[ * ]
557-120		C9012A01211		[ * ]		[ * ]
538-010		C9013A00111		[ * ]		[ * ]
538-020		C9013A00211		[ * ]		[ * ]
538-030		C9013A00311		[ * ]		[ * ]
528-040		C9014A00411		[ * ]		[ * ]
528-050		C9014A00511		[ * ]		[ * ]
528-060		C9014A00611		[ * ]		[ * ]

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

548-080		C9015A00811		[ * ]		[ * ]
548-100		C9015A01011		[ * ]		[ * ]
548-110		C9015A01111		[ * ]		[ * ]
548-120		C9015A01211		[ * ]		[ * ]
548-140		C9015A01411		[ * ]		[ * ]
577-040		C9016A00411		[ * ]		[ * ]
577-050		C9016A00S11		[ * ]		[ * ]
577-060		C9016A00611		[ * ]		[ * ]
5K7-010		C9017A00111		[ * ]		[ * ]
5K7-020		C9017A00211		[ * ]		[ * ]
5K7-030		C9017A00311		[ * ]		[ * ]
587-080		C9018A00811		[ * ]		[ * ]
587-100		C9018A01011		[ * ]		[ * ]
587-120		C9018A01211		[ * ]		[ * ]
558-040		C9019A00411		[ * ]		[ * ]
558-050		C9019A00511		[ * ]		[ * ]
558-060		C9019A00611		[ * ]		[ * ]
588-080		C9020A00811		[ * ]		[ * ]
588-100		C9020A01011		[ * ]		[ * ]
588-120		C9020A01211		[ * ]		[ * ]

WAFER BASED PRICING

MOS VI Voltage		Wafer Price Effective 1-Jun-04		Wafer Price Effective 6-Jul-05
100		[ * ]		[ * ]
200		[ * ]		[ * ]
300		[ * ]		[ * ]
400		[ * ]		[ * ]
500		[ * ]		[ * ]
600		[ * ]		[ * ]
800		[ * ]		[ * ]
1000		[ * ]		[ * ]
1200		[ * ]		[ * ]

DIE BASED PRICING

APT MOS VII Type		Infineon Type		Die Price effective 1-Jun-04		Die Price effective 6-Jul-05
1015-020		C9200A00211		wafer		[ * ]
1015-040		C9200A00411		wafer		[ * ]
1015-050		C9200A00511		wafer		[ * ]
1015-055		C9200A05511		wafer		[ * ]
1015-060		C9200A00611		wafer		[ * ]
1027-010		C9211A00111		wafer		[ * ]
1027-020		C9211A00211		wafer		[ * ]
1027-030		C9211A00311		wafer		[ * ]
1027-040		C9211A00411		wafer		[ * ]

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

APT MOS VII Type		Infineon Type		Die Price effective 1-Jun-04		Die Price effective 6-Jul-05
1027-050		C9211A10511		wafer		[ * ]
1027-055		C9211A05511		wafer		[ * ]
1027-060		C9211A10611		wafer		[ * ]
1028-010		C9214A00111		wafer		[ * ]
1028-020		C9214A00211		wafer		[ * ]
1028-030		C9214A00311		wafer		[ * ]
1028-040		C9214A00411		wafer		[ * ]
1028-050		C9214A00511		wafer		[ * ]
1028-055		C9214A05511		wafer		[ * ]
1028-060		C9214A00611		wafer		[ * ]
1037-040		C9221A00411		wafer		[ * ]
1037-050		C9221A00511		wafer		[ * ]
1037-055		C9221A05511		wafer		[ * ]
1037-060		C9221A00611		wafer		[ * ]
1044-100		C9224A01011		wafer		[ * ]
1044-120		C9224A01211		wafer		[ * ]
1046-010		C9205A00111		wafer		[ * ]
1046-020		C9205A00211		wafer		[ * ]
1046-030		C9205A00311		wafer		[ * ]
1046-040		C9205A00411		wafer		[ * ]
1046-050		C9205A00511		wafer		[ * ]
1046-055		C9205A05511		wafer		[ * ]
1046-060		C9205A00611		wafer		[ * ]
1048-080		C9215A00811		wafer		[ * ]
1048-100		C9215A01011		wafer		[ * ]
1048-110		C9215A01111		wafer		[ * ]
1048-120		C9215A01211		wafer		[ * ]
1056-010		C9207A00111		wafer		[ * ]
1056-020		C9207A00211		wafer		[ * ]
1056-030		C9207A00311		wafer		[ * ]
1056-040		C9207A00411		wafer		[ * ]
1056-050		C9207A00511		wafer		[ * ]
1056-055		C9207A05511		wafer		[ * ]
1056-060		C9207A00611		wafer		[ * ]
1057-080		C9212A00811		wafer		[ * ]
1057-100		C9212A01011		wafer		[ * ]
1057-110		C9212A01111		wafer		[ * ]
1057-120		C9212A01211		wafer		[ * ]
1058-040		C9219A00411		wafer		[ * ]
1058-050		C9219A00511		wafer		[ * ]
1058-055		C9219A05511		wafer		[ * ]
1058-060		C9219A00611		wafer		[ * ]
1066-040		C9202A00411		wafer		[ * ]
1066-050		C9202A00511		wafer		[ * ]
1066-055		C9202A05511		wafer		[ * ]
1066-060		C9202A00611		wafer		[ * ]

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

APT MOS VII Type		Infineon Type		Die Price effective 1-Jun-04		Die Price effective 6-Jul-05
1076-080		C9203A00811		wafer		[ * ]
1076-100		C9203A01011		wafer		[ * ]
1076-110		C9203A01111		wafer		[ * ]
1076-120		C9203A01211		wafer		[ * ]
1077-010		C9216A00111		wafer		[ * ]
1077-020		C9216A00211		wafer		[ * ]
1077-030		C9216A00311		wafer		[ * ]
1077-040		C9216A00411		wafer		[ * ]
1077-050		C9216A00511		wafer		[ * ]
1077-055		C9216A05511		wafer		[ * ]
1077-060		C9216A00611		wafer		[ * ]
1086-080		C9208A00811		wafer		[ * ]
1086-100		C9208A01011		wafer		[ * ]
1086-110		C9208A01111		wafer		[ * ]
1086-120		C9208A01211		wafer		[ * ]
1087-080		C9218A00811		wafer		[ * ]
1087-100		C9218A01011		wafer		[ * ]
1087-110		C9218A01111		wafer		[ * ]
1087-120		C9218A01211		wafer		[ * ]
1087-080		C9220A00811		wafer		[ * ]
1087-100		C9220A01011		wafer		[ * ]
1087-120		C9220A01211		wafer		[ * ]

DIE BASED PRICING

APT MOS VII IGBT Type		Infineon Type		Die Price effective 1-Jun-04		Die Price effective 6-Jul-05
1303-030		C9325A00311		wafer		[ * ]
1303-060		C9325A00611		wafer		[ * ]
1315-030		C9300A00311		wafer		[ * ]
1315-060		C9300A00611		wafer		[ * ]
1327-030		C9311A00311		wafer		[ * ]
1327-060		C9311A00611		wafer		[ * ]
1327-120		C9311A01211		wafer		[ * ]
1334-030		C9322A00311		wafer		[ * ]
1334-060		C9322A00611		wafer		[ * ]
1334-120		C9322A01211		wafer		[ * ]
1335-090		C9323A00911		wafer		[ * ]
1335-120		C9323A01211		wafer		[ * ]
1337-030		C9321A00311		wafer		[ * ]
1337-060		C9321A00611		wafer		[ * ]
1344-090		C9324A00911		wafer		[ * ]
1344-120		C9324A01211		wafer		[ * ]

[ * ] = CONFIDENTIAL TREATMENT REQUESTED

APT MOS VII IGBT Type		Infineon Type		Die Price effective 1-Jun-04		Die Price effective 6-Jul-05
1346-030		C9305A00311		wafer		[ * ]
1346-060		C9305A00611		wafer		[ * ]
1356-030		C9307A00311		wafer		[ * ]
1356-060		C9307A00611		wafer		[ * ]
1357-120		C9312A01211		wafer		[ * ]
1376-090		C9303A00911		wafer		[ * ]
1376-120		C9303A01211		wafer		[ * ]
1377-060		C9316A00611		wafer		[ * ]
1386-120		C9308A01211		wafer		[ * ]

[ * ] = CONFIDENTIAL TREATMENT REQUESTED