INDEMNIFICATION AGREEMENTIndemnification Agreement • June 8th, 2010 • Nexx Systems Inc • Semiconductors & related devices • Delaware
Contract Type FiledJune 8th, 2010 Company Industry JurisdictionTHIS INDEMNIFICATION AGREEMENT (this “Agreement”) is made as of [ ], 2010, by and between NEXX Systems, Inc., a Delaware corporation (the “Company”) and [ ] (“Indemnitee”).
JOINT DEVELOPMENT AGREEMENT - BETWEEN - INTERNATIONAL BUSINESS MACHINES CORPORATION ANDJoint Development Agreement • June 8th, 2010 • Nexx Systems Inc • Semiconductors & related devices • New York
Contract Type FiledJune 8th, 2010 Company Industry JurisdictionThis JOINT DEVELOPMENT AGREEMENT ("Agreement") is effective as of the last date of signature hereunder ("Effective Date") between INTERNATIONAL BUSINESS MACHINES CORPORATION, a New York corporation with a place of business at 2070 Route 52, Hopewell Junction, New York 12533 ("IBM") and NEXX SYSTEMS, INC. ("NEXX"), a Delaware corporation with a place of business at 900 Middlesex Turnpike Building 6, Billerica, MA 01821-3929. IBM and NEXX may be individually referred to herein as a "Party" or collectively as the "Parties".
ContractLicense Agreement • June 8th, 2010 • Nexx Systems Inc • Semiconductors & related devices
Contract Type FiledJune 8th, 2010 Company Industry[ * ] =Certain information on this page has been redacted and filed separately with the Securities and Exchange Commission. Confidential treatment has been requested with respect to the omitted portions.
Development Agreement (hereinafter referred to as "Agreement") between Infineon Technologies Austria AG, a corporation duly organized and existing under the laws of Austria and having offices at Siemensstrasse 2, 9500 Villach, Austria (hereinafter...Development Agreement • June 8th, 2010 • Nexx Systems Inc • Semiconductors & related devices
Contract Type FiledJune 8th, 2010 Company IndustryWHEREAS, NEXX possesses know-how and expertise with regard to an ECD tool for electroplating deposition processes for applications such as gold and solder wafer bumping, redistribution layers, integrated passives and various MEMS layers;