Vitesse Semiconductor Corporation Development Agreement for Proprietary Epitaxial DHBT Structure Compatible with the VIP2 InP IC ProcessDevelopment Agreement • August 12th, 2005 • Gigabeam Corp • Radio & tv broadcasting & communications equipment • Delaware
Vitesse Semiconductor Corporation, a corporation organized under the laws of the state of Delaware,with a principal place of business at 741 Calle Plano, Camarillo, California 93012 (“Vitesse”) and GigaBeam Corporation, a corporation organized under the laws of the state of Delaware, with a principal place of business at 470 Springpark Place, Suite 900, Herndon, VA 20170 (“Customer”) agree to enter into this agreement (the “Agreement”) for the development of analog and digital communications integrated circuit products for the 50-300 GHz frequency range. In part, this work includes the development of a custom InP-based epitaxial layer stack to realize a transistor with properties required for the implementation of certain of the communications integrated circuit products. This Agreement is entered into this 8th day of August, 2005 (the “Effective Date”).
