LTE SOC JOINT DEVELOPMENT AGREEMENTLte Soc Joint Development Agreement • February 15th, 2012 • GCT Semiconductor Inc • Semiconductors & related devices • California
Royalty Payment: In consideration for the license of LGE [***], GCT shall pay to LGE [***]. The rate for the Royalty Payment is described in the table below.
Standard Contracts
LTE SOC JOINT DEVELOPMENT AGREEMENTLte Soc Joint Development Agreement • September 15th, 2011 • GCT Semiconductor Inc • California
THIS LTE SOC JOINT DEVELOPMENT AGREEMENT (this “Agreement”) is entered into this 24th day of February, 2009 (the “Effective Date”) by and between LG Electronics Inc. (“LGE”), a Republic of Korea corporation with principal offices located at LG Twin Towers, 20 Yeouido-dong, Yeongdeungpo-gu, Seoul, 150-721, Republic of Korea and GCT Semiconductor, Inc. (“GCT”), a Delaware corporation with principal offices located at 2121 Ringwood Avenue, San Jose, CA 95131 (LGE and GCT individually a “Party”, and collectively the “Parties”.)
