Device Performance a. Device Downtime shall be computed from the time the Contractor is notified of Device failure until the time in which the Device is fully operational.
Device Performance. The ionization potentials and optical bandgaps of the T8TBTs were estimated respectively from cyclic voltammetry and the onset of optical absorption in order to compare them with other photovoltaic materials. (Table 1) The energy levels thus computed make the T8TBTs suitable for polymer:PCBM BHJ solar cells and such devices were made in the standard architec- ture (Glass/ITO/PEDOT:PSS/active layer/Al). The best devices were obtained at polymer:PCBM ratios of 1:3. As could have been predicted from the energy levels, the T8TBTs have a rather low and very similar open-circuit voltage under AM1.5G at 1000 W m—2 of about 0.6 V (Fig. 3b). This value is similar to what is obtained for P3HT:PCBM blends. Nevertheless the three T8TBTs perform very differently. T8TBT-0 has a broader absorption spectrum and better external quantum efficiency (EQE) under monochromatic light (Fig. 3a) resulting in a strong increase in Emission peak, solution (nm) Emission peak, film (nm) PLQE in solution (%) PLQE in film (%) Xxxxxx shift in solution (eV) Xxxxxx shift in film (eV) 725 700 670 8 16 22 2 11 22 0.38 0.49 0.63 0.46 0.52 0.62
Device Performance. We will ensure products will perform within the operational and environmental parameters specified in the product published specification for 30 days from date of return shipment.
Device Performance. 2.3.1. F8TBT-PCBM Figure 5 shows the EQE and current–voltage (J–V) characteris- tics of the double-imprinted PV cells for a series of feature sizes in comparison to planar and blend controls under solar illumi- nation conditions. There is an obvious correlation of pattern feature sizes (or D/A interface areas) with EQE and PCE, short circuit current density (JSC) and fill factor (FF). Device perform- ance parameters are also summarized in Table 1. As recorded in Table 2, the open circuit voltage (VOC) of nanostructured PV cells is in the range of 1.04–1.17 V, while that of blend control device is only 1.01 V which might be attributed to the reduced F8TBT:PCBM ratio (1:5 by weight) compared to the ratio used in previously reported blend cells (1:3 by weight,
