Diodes Inc /Del/ Sample Contracts

EXHIBIT 10.23
Loan Agreement • May 15th, 1998 • Diodes Inc /Del/ • Semiconductors & related devices
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CREDIT AGREEMENT* Dated as of January 8, 2013 among DIODES INCORPORATED, as the Domestic Borrower, DIODES INTERNATIONAL B.V., as the Foreign Borrower, DIODES INVESTMENT COMPANY, DIODES FABTECH INC., DIODES HOLDINGS UK LIMITED and DIODES ZETEX LIMITED,...
Credit Agreement • January 11th, 2013 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This CREDIT AGREEMENT (“Agreement”) is entered into as of January 8, 2013, among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES INTERNATIONAL B.V., a besloten vennootschap met beperkte aansprakelijkheid organized under the laws of the Netherlands, having its statutory seat in Amsterdam, the Netherlands and registered with the trade register of the Chambers of Commerce in the Netherlands under number 34274981 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as guarantors, each lender from time to time party hereto (collectively, the “Lenders” and individually, a “Lender”), and BANK OF AMERICA, N.A., as Administrative Agent, Swing Line Lender and L/C Issuer.

RECITALS:
Credit Agreement • March 31st, 2003 • Diodes Inc /Del/ • Semiconductors & related devices • California
EXHIBIT 10.26
Consulting Agreement • November 13th, 1998 • Diodes Inc /Del/ • Semiconductors & related devices • California
EXHIBIT 10.36 THIRD AMENDMENT OF LEASE
Lease • November 14th, 2001 • Diodes Inc /Del/ • Semiconductors & related devices
AMENDED AND RESTATED CREDIT AGREEMENT Dated as of October 26, 2016 among DIODES INCORPORATED, as the Domestic Borrower, DIODES INTERNATIONAL B.V., as the Foreign Borrower, DIODES INVESTMENT COMPANY, DIODES FABTECH INC., PERICOM SEMICONDUCTOR...
Credit Agreement • November 1st, 2016 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This AMENDED AND RESTATED CREDIT AGREEMENT (“Agreement”) is entered into as of October 26, 2016, among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES INTERNATIONAL B.V., a besloten vennootschap met beperkte aansprakelijkheid organized under the laws of the Netherlands, having its statutory seat in Amsterdam, the Netherlands and registered with the trade register of the Chambers of Commerce in the Netherlands under number 34274981 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as guarantors, each lender from time to time party hereto (collectively, the “Lenders” and individually, a “Lender”), and BANK OF AMERICA, N.A., as Administrative Agent, Swing Line Lender and L/C Issuer.

1 EXHIBIT 10.31
Volume Purchase Agreement • December 18th, 2000 • Diodes Inc /Del/ • Semiconductors & related devices
AMENDMENT NO. 3 TO CREDIT AGREEMENT, INCREMENTAL TERM ASSUMPTION AGREEMENT, LIMITED WAIVER AND CONSENT*
Credit Agreement • September 3rd, 2015 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This CREDIT AGREEMENT (“Agreement”) is entered into as of January 8, 2013, among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES INTERNATIONAL B.V., a besloten vennootschap met beperkte aansprakelijkheid organized under the laws of the Netherlands, having its statutory seat in Amsterdam, the Netherlands and registered with the trade register of the Chambers of Commerce in the Netherlands under number 34274981 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as guarantors, each lender from time to time party hereto (collectively, the “Lenders” and individually, a “Lender”), and BANK OF AMERICA, N.A., as Administrative Agent, Swing Line Lender and L/C Issuer.

EXHIBIT 10.30
Stock Purchase Agreement • December 18th, 2000 • Diodes Inc /Del/ • Semiconductors & related devices • California
EXECUTION COPY WAFER PURCHASE AGREEMENT By and Between LITE-ON SEMICONDUCTOR CORPORATION,
Wafer Purchase Agreement • January 12th, 2006 • Diodes Inc /Del/ • Semiconductors & related devices
CREDIT AGREEMENT* Dated as of January 8, 2013 among DIODES INCORPORATED, as the Domestic Borrower, DIODES INTERNATIONAL B.V., as the Foreign Borrower, DIODES INVESTMENT COMPANY, DIODES FABTECH INC., DIODES HOLDINGS UK LIMITED and DIODES ZETEX LIMITED,...
Credit Agreement • March 29th, 2013 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This CREDIT AGREEMENT (“Agreement”) is entered into as of January 8, 2013, among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES INTERNATIONAL B.V., a besloten vennootschap met beperkte aansprakelijkheid organized under the laws of the Netherlands, having its statutory seat in Amsterdam, the Netherlands and registered with the trade register of the Chambers of Commerce in the Netherlands under number 34274981 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as guarantors, each lender from time to time party hereto (collectively, the “Lenders” and individually, a “Lender”), and BANK OF AMERICA, N.A., as Administrative Agent, Swing Line Lender and L/C Issuer.

AGREEMENT AND PLAN OF MERGER BY AND AMONG DIODES INCORPORATED PSI MERGER SUB, INC. AND PERICOM SEMICONDUCTOR CORPORATION Dated as of September 2, 2015
Merger Agreement • September 3rd, 2015 • Diodes Inc /Del/ • Semiconductors & related devices • California

AGREEMENT AND PLAN OF MERGER, dated as of September 2, 2015 (this “Agreement”), by and among DIODES INCORPORATED, a corporation incorporated in the State of Delaware (“Parent”), PSI Merger Sub, Inc., a corporation incorporated in the State of California (“Merger Sub”), and PERICOM SEMICONDUCTOR CORPORATION, a corporation incorporated in the State of California (the “Company”). Each of the parties to this Agreement is individually referred to herein as a “Party” and collectively as the “Parties.” Capitalized terms used herein that are not otherwise defined herein shall have the meanings ascribed to them in Annex A hereto.

EMPLOYMENT AGREEMENT
Employment Agreement • September 2nd, 2005 • Diodes Inc /Del/ • Semiconductors & related devices • California

THIS EMPLOYMENT AGREEMENT is made and effective as of the 29th day of August 2005, by and between Diodes Incorporated, a Delaware corporation (the "Company"), and DR. KEH-SHEW LU (the "Employee"), with respect to the following facts:

DIODES INCORPORATED NONSTATUTORY STOCK OPTION AGREEMENT
Nonstatutory Stock Option Agreement • February 27th, 2014 • Diodes Inc /Del/ • Semiconductors & related devices

Diodes Incorporated, a Delaware corporation, (the “Company”), hereby grants an Option to purchase Shares to the Optionee named below. The terms and conditions of the Option are set forth in this cover sheet and the attached Nonstatutory Stock Option Agreement (together, this “Agreement”) and in the Diodes Incorporated 2013 Equity Incentive Plan as it may be amended from time to time.

Third Floor of the Dormitory Building Lease Agreement
Lease Agreement • November 9th, 2011 • Diodes Inc /Del/ • Semiconductors & related devices

This Third Floor of the Dormitory Building Lease Agreement (the “Lease Agreement”) is entered into as of July 1, 2011 (“Effective Date”) in the city of Shanghai, by and between SHANGHAI KAI HONG TECHNOLOGY CO., LTD. (hereinafter referred to as “DSH”) with its registered office at No.1 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China and SHANGHAI DING HONG ELECTRONIC CO., LTD. (hereinafter referred to as “Ding Hong”) with its registered office at No.999 Chenchun Road, Xinqiao Town, Songjiang, Shanghai, P.R. China.

Factory Building Lease Agreement
Factory Building Lease Agreement • August 11th, 2008 • Diodes Inc /Del/ • Semiconductors & related devices

This Factory Building Lease Agreement (the “Lease Agreement”) is entered into as of March 1, 2008 (“Effective Date”) in the city of Shanghai, by and between SHANGHAI KAI HONG TECHNOLOGY CO., LTD. (hereinafter referred to as “DSH”) with its registered office at No.1 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China and SHANGHAI YUAN HAO ELECTRONIC CO., LTD. (hereinafter referred to as “Yuan Hao”) with its registered office at No.8 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China

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Fourth Floor of the Accommodation Building Lease Agreement
Lease Agreement • August 11th, 2008 • Diodes Inc /Del/ • Semiconductors & related devices

This Fourth Floor of the Accommodation Building Lease Agreement (the “Lease Agreement”) is entered into as of January 1, 2008 (“Effective Date”) in the city of Shanghai, by and between SHANGHAI KAI HONG TECHNOLOGY CO., LTD. (hereinafter referred to as “DSH”) with its registered office at No.1 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China and SHANGHAI DING HONG ELECTRONIC CO., LTD. (hereinafter referred to as “Ding Hong”) with its registered office at No.999 Chenchun Road, Xinqiao Town, Songjiang, Shanghai, P.R.China.

CONSENT TO CREDIT AGREEMENT
Consent to Credit Agreement • August 5th, 2019 • Diodes Inc /Del/ • Semiconductors & related devices • New York

THIS CONSENT TO CREDIT AGREEMENT dated as of January 30, 2019 (this “Consent”) is entered into among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES HOLDING B.V., a besloten vennootschap met beperkte aansprakelijkheid, organized under the laws of the Netherlands, having its statutory seat in Amsterdam, the Netherlands, and registered with the trade register of the Chamber of Commerce in the Netherlands under number 65823060 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as subsidiary guarantors (the “Subsidiary Guarantors”), the Lenders identified on the signature pages hereto and BANK OF AMERICA, N.A., as Administrative Agent (in such capacity, the “Administrative Agent”).

Chemical Warehouse Lease Agreement
Chemical Warehouse Lease Agreement • March 2nd, 2015 • Diodes Inc /Del/ • Semiconductors & related devices

This Chemical Warehouse Lease Agreement (the “Lease Agreement") is entered into as of November 1, 2014 (“Effective Date”) in the city of Shanghai, by and between Shanghai Kaihong Electronic Co., Ltd.. (hereinafter referred to as "SKE") with its registered office at No. 999 Chen Chun Road, Xingqiao Town, Songjiang County, Shanghai, People’s Republic of China and Shanghai Ding Hong Electronic Co., Ltd. (hereinafter referred to as "Ding Hong") with its registered office at No. 999 Chen Chun Road, Xingqiao Town, Songjiang County, Shanghai, People’s Republic of China.

DIODES INCORPORATED and UNION BANK OF CALIFORNIA, N.A., as Trustee INDENTURE Dated as of October __, 2006 $200,000,000 Principal Amount __% CONVERTIBLE SENIOR NOTES DUE 2026
Indenture • October 4th, 2006 • Diodes Inc /Del/ • Semiconductors & related devices • New York

INDENTURE, dated as of October ___, 2006, between Diodes Incorporated, a Delaware corporation (the “Company”), and Union Bank of California, N.A., as trustee (the “Trustee”).

DIODES INCORPORATED STOCK UNIT AGREEMENT
Stock Unit Agreement • February 27th, 2014 • Diodes Inc /Del/ • Semiconductors & related devices

Diodes Incorporated, a Delaware corporation, (the “Company”), hereby awards Stock Units to the Participant named below. The terms and conditions of the Award are set forth in this cover sheet and in the attached Stock Unit Agreement (together, this “Agreement”) and in the Diodes Incorporated 2013 Equity Incentive Plan as it may be amended from time to time (the “Plan”).

third AMENDED AND RESTATED CREDIT AGREEMENT Dated as of May 26, 2023 among DIODES INCORPORATED, as the Domestic Borrower, DIODES HOLDINGS UK LIMITED, as the Foreign Borrower, DIODES ZETEX LIMITED and Diodes US Manufacturing Incorporated as Guarantors,...
Credit Agreement • June 2nd, 2023 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This THIRD AMENDED AND RESTATED CREDIT AGREEMENT (“Agreement”) is entered into as of May 26, 2023, among DIODES INCORPORATED, a Delaware corporation (the “Domestic Borrower”), DIODES HOLDINGS UK LIMITED, a company incorporated and registered under the laws of England and Wales with registration number 06475363 (the “Foreign Borrower” and together with the Domestic Borrower, the “Borrowers” and each, individually, a “Borrower”), certain Subsidiaries of the Domestic Borrower identified on the signature pages hereto as guarantors, each lender from time to time party hereto (collectively, the “Lenders” and individually, a “Lender”), BANK OF AMERICA, N.A., as Administrative Agent, Swingline Lender and an L/C Issuer and the other L/C Issuers from time to time party hereto.

EXHIBIT A INDEMNIFICATION AGREEMENT DIODES INCORPORATED INDEMNIFICATION AGREEMENT
Indemnification Agreement • July 27th, 2015 • Diodes Inc /Del/ • Semiconductors & related devices • California

This Indemnification Agreement (this “Agreement”) is entered into and made effective on September 20, 2000, by and between Diodes, Inc., a Delaware corporation (the “Company”), and Keh-Shew Lu ("Indemnitee").

CREDIT AGREEMENT Dated as of November 25, 2009 among DIODES INCORPORATED, and DIODES ZETEX LIMITED as Borrowers, and BANK OF AMERICA, N.A., as Lender
Credit Agreement • August 6th, 2010 • Diodes Inc /Del/ • Semiconductors & related devices • Texas

This CREDIT AGREEMENT (“Agreement”) is entered into as of November 25, 2009, among Diodes Incorporated, a Delaware corporation (“Company”), Diodes Zetex Limited, a United Kingdom corporation (together with Company, the “Borrowers” and, each a “Borrower”), and BANK OF AMERICA, N.A., (“Lender”).

EXHIBIT 10.32
Credit Agreement • December 18th, 2000 • Diodes Inc /Del/ • Semiconductors & related devices • California
EXCHANGE AGREEMENT
Exchange Agreement • October 2nd, 2009 • Diodes Inc /Del/ • Semiconductors & related devices • New York

This Exchange Agreement (this “Agreement”) is entered into by and between Diodes Incorporated (the “Company”) and [REDACTED] (“Holder” and, collectively with the Company, the “Parties”), effective as of September 28, 2009. The Company and Holder hereby agree, covenant, represent and warrant as follows:

Power Facility Construction Application Agreement
Power Facility Construction Application Agreement • March 1st, 2010 • Diodes Inc /Del/ • Semiconductors & related devices

This Power Facility Construction Application Agreement (the “Agreement”) is entered into as of October 29, 2009 (“Effective Date”) in the city of Shanghai, by and between SHANGHAI KAI HONG TECHNOLOGY CO., LTD. (hereinafter referred to as “DSH”) with its registered office at No.1 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China and SHANGHAI YUAN HAO ELECTRONIC CO., LTD. (hereinafter referred to as “Yuan Hao”) with its registered office at No.8 Lane 18 San Zhuang Road, Songjiang Export Processing Zone, Shanghai, P.R.China. DSH and Yuan Hao are collectively referred to as the “Parties” and individually as a “Party”.

STOCK UNIT AGREEMENT
Stock Unit Agreement • May 5th, 2016 • Diodes Inc /Del/ • Semiconductors & related devices • Delaware

Diodes Incorporated, a Delaware corporation, (the “Company”), hereby commits to award Stock Units to the Participant named below. The terms and conditions of the Award are set forth in this cover sheet and in the attached Stock Unit Agreement (together, this “Agreement”) and in the Diodes Incorporated 2013 Equity Incentive Plan as it may be amended from time to time (the “Plan”). This Agreement is the Stock Unit Agreement referenced in Section 2.1(ii) of the employment agreement by and between Participant and the Company, dated July 10, 2015, (the “Employment Agreement”). For purposes of this Agreement, a “Qualifying Termination” occurs on the date of termination of Participant’s employment with the Company due to either (i) a termination by Participant for “good reason” (as defined in the Employment Agreement), (ii) a termination by the Company without “cause” (as defined in the Employment Agreement), (iii) Participant’s death, or (iv) Participant’s Disability. This Award is intended

EXHIBIT 10.2
Compensation Trade Agreement • October 27th, 1995 • Diodes Inc /Del/ • Semiconductors & related devices
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