Examples of Bulk CMOS in a sentence
Demonstrate a complete AC Coupled first level packaging solution in both Bulk CMOS and SOI.
Bhuva, et al., "Single-Event Charge Collection and Upset in 40-nm Dual- and Triple- Well Bulk CMOS SRAMs" IEEE Trans.
Lawrence, J.F. Ross, N.F. Haddad, R.A. Reed, D.R. Albrecht, “Soft Error Sensitivities in 90nm Bulk CMOS SRAMs”, Radiation Effects Data Workshop, NSREC 2009, pp.
Martins2,4 1Hong Kong University of Science and Technology, Hong Kong, China 2University of Macau, Macao, China; 3Synopsys, Macao, China4Instituto Superior Tecnico, Lisbon, Portugal 20.5 A 2-/3-Phase Fully Integrated Switched-Capacitor DC-DC Converter 9:45 AM in Bulk CMOS for Energy-Efficient Digital Circuits with 14%Efficiency ImprovementJ.
Massengill, “Single-Event Tolerant Flip-Flop Design in 40-nm Bulk CMOS Technology,” IEEE Trans.
Bhuva, “High-Speed Pulsed-Hysteresis-Latch Design for Improved SER Performance in 20-nm Bulk CMOS Process,” 2014 IEEE International Reliability Physics Symposium, Kona, HI, June 2014.
Guido Masera, guido.masera@polito.it Experience and expertise fields Design of digital Application Specific Integrated Circuits (ASIC) in CMOS Bulk and SOI; Low-power SOI SRAM design; SOI DTMOS and other body-biasing schemes; High-speed SOI domino logic; Modelling of SOI behaviour in digital circuits (Partially and Fully Depleted); Performance trend predictions for future SOI and Bulk CMOS technologies.
Chuang, C.H. Diaz, and M.S. Liang, TSMC10:45 a.m.11.5 High Performance Sub-40 nm Bulk CMOS with Dopant Confinement Layer (DCL) Technique as a Strain Booster, H.Ohta, N.Tamura, H.Fukutome, M.Tajima*, K.
Holman, “Trends in Heavy-ion Upset Cross-sections for Flip-flop Designs at Deep Sub- micron Bulk CMOS Technologies,” Presented at the 2012 IEEE European Conference on Radiation Effects on Components and Systems, Biarritz, France, September 2012.
Farid Uddin Ahmed, Zarin Tasnim Sandhie and Masud H Chowdhury, “An External Capacitor-less Fully On- chip Low-Drop-Out Voltage Regulator in 45nm Bulk CMOS with an Output Ranging from 0.4-1.2V”,” Microelectronics Journal, Under Review.