Stack DRAM definition

Stack DRAM means dynamic random access memory cell that functions by using a capacitor arrayed predominantly above the semiconductor substrate.
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Stack DRAM means dynamic random access memory cell that functions by using a capacitor arrayed predominantly above the semiconductor substrate. “Stack DRAM Design” means, with respect to a Stack DRAM Product, the corresponding design components, materials and information listed on Schedule 3 of the JDP Agreement or the JDP-CSA Agreement or as otherwise determined by the relevant JDP Committee in a SOW. “Stack DRAM Module” means one or more Stack DRAM Products in a JEDEC-compliant package or module (whether as part of a SIMM, DIMM, multi-chip package, memory card or other memory module or package). “Stack DRAM Product” means any memory comprising Stack DRAM, whether in die or wafer form. “Subsidiary” means, with respect to any specified Person, any other Person that, directly or indirectly, including through one or more intermediaries, is controlled by such specified Person. “Supply Agreement” means that certain Supply Agreement by and among NTC, Micron and IMI dated as of November 26, 2008. “Tax” or “Taxes” means any federal, state, local or foreign net income, gross income, gross receipts, sales, use ad valorem, transfer, franchise, profits, service, service use, withholding, payroll, employment, excise, severance, stamp, occupation, premium, property, customs, duties or other type of fiscal levy and all other taxes, governmental fees, registration fees, assessments or charges of any kind whatsoever, together with any interest and penalties, additions to tax or additional amounts imposed or assessed with respect thereto. “Taxing Authority” means any Governmental Entity exercising any authority to impose, regulate or administer the imposition of Taxes. “Term” shall have the meaning set forth in Section 9.1. “Third Party” means any Person other than NTC or Micron. “TTLA 68-50” means that certain Technology Transfer and License Agreement for 68-50nm Process Nodes by and between the Parties dated as of the Effective Date. - 7 - [***] 1.2
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Stack DRAM means dynamic random access memory cells that function by using a capacitor arrayed predominantly above the semiconductor substrate. “Stack DRAM Design” means, with respect to a Stack DRAM Product, the corresponding design components, materials and information listed on Schedule 3 of the JDP Agreement or the JDP-CSA Agreement or as otherwise determined by the relevant JDP Committee in a SOW. “Stack DRAM Module” means one or more Stack DRAM Products in a package or module (whether as part of a SIMM, DIMM, multi-chip package, memory card or other memory module or package). - 12 - [***] DENOTES CONFIDENTIAL MATERIALS OMITTED AND FILED SEPARATELY WITH THE SECURITIES AND EXCHANGE COMMISSION PURSUANT TO A REQUEST FOR CONFIDENTIAL TREATMENT MICRON / NTC CONFIDENTIAL “Stack DRAM Product” means any memory device comprising Stack DRAM, whether in die or wafer form, manufactured by using a JDP Process Node. “Subsidiary” means, with respect to any specified Person, any other Person that, directly or indirectly, including through one or more intermediaries, is controlled by such specified Person. “Tax” or “Taxes” means any federal, state, local or foreign net income, gross income, gross receipts, sales, use ad valorem, transfer, franchise, profits, service, service use, withholding, payroll, employment, excise, severance, stamp, occupation, premium, property, customs, duties or other type of fiscal levy and all other taxes, governmental fees, registration fees, assessments or charges of any kind whatsoever, together with any interest and penalties, additions to tax or additional amounts imposed or assessed with respect thereto. “Taxing Authority” means any Governmental Entity exercising any authority to impose, regulate or administer the imposition of Taxes. “Term” shall have the meaning set forth in Section 9.1. “Third Party” means any Person other than NTC or Micron. “TTLA 20” means that certain Technology Transfer and License Option Agreement for 20nm Process Nodes dated as of the date hereof, between the Parties, as may be amended from time to time. “TTLA 68-50” means that certain Second Amended and Restated Technology Transfer and License Agreement for 68-50nm Process Nodes dated as of the date hereof, between the Parties, as may be amended from time to time. “[***]” means [***] pursuant to which [***] is required to [***] any of the [***] under the [***].
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Examples of Stack DRAM in a sentence

  • Letters of Technical Bid/ Price Bid, AndAppendices to BidLetter of Technical BidLTB-1 Bid Reference No. BC-PN-17-05-10 To: ................................................................................................................................................

  • SOWs can be proposed for the design of products that are not at the time of submission Commodity Stack DRAM Products.

  • Subject to the mutual agreement of the JV Parties, the Joint Venture Company may purchase, at fair market value, NTC’s idle equipment that is suitable for use in connection with the manufacturing of Stack DRAM Products.

  • NTC shall cause any Affiliate that disposes of Stack DRAM Product in a manner that causes Royalties to be due to keep records and permit an audit of such records consistent with the obligations of NTC hereunder.

  • Micron has developed technology and product designs for 68nm and 50nm Process Nodes for the manufacture of Stack DRAM Products.

  • For complete details on advances in ESG Risk, review the “Chapter 2.

  • As reasonably requested by the Joint Venture Company from time to time and to the extent fulfilling such request would not cause disruption of their respective operations, Micron will provide to the Joint Venture Company engineering support for its implementation of the Transferred Technology transferred by Micron to the Joint Venture Company for use in the Joint Venture Company’s facilities for the manufacture of Stack DRAM wafers.

  • After the Transition Period, the JV Parties shall use best efforts to cause the purpose of the Joint Venture Company to be the manufacture and sale of certain Stack DRAM Products exclusively for and to Micron and NTC; and the entry of, or engagement in, any such lawful transactions or activities in furtherance of the foregoing purpose.

  • Micron has developed technology for 68nm and 50nm Process Nodes for the manufacture of Stack DRAM Products.

  • Micron represents and warrants to NTC that the Transferred Technology transferred to NTC pursuant to Section 3.1 of the TTLA 68-50 includes the state thereof used by Micron as of the Effective Date in the production of Stack DRAM Products on its or its Affiliates' 68nm Process Node.

Related to Stack DRAM

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  • Fabrication means making up data or results and recording or reporting them.

  • Sensor means any measurement device that is not part of the vehicle itself but installed to determine parameters other than the concentration of gaseous and particle pollutants and the exhaust mass flow.

  • Cannabis testing facility means an entity registered by

  • Supported Web Browser means the current release from time to time of Microsoft Edge, Mozilla Firefox, Google Chrome or Apple Safari, or any other web browser that the Provider agrees in writing shall be supported;

  • PNode has the meaning set forth in the CAISO Tariff.

  • Substrate means the surface onto which a coating is applied or into which a coating is impregnated.

  • Tight-fitting facepiece means a respiratory inlet covering that forms a complete seal with the face.

  • Node means an area designated by the State Planning Commission concentrating facilities and activities which are not organized in a compact form.

  • medium voltage means the set of nominal voltage levels that lie above low voltage and below high voltage in the range of 1 kV < Un 44 kV. [SANS 1019]

  • Modules means the Base Modules and Extended Modules.

  • Semiconductor equipment means (i) machinery or tools or repair parts or replacements thereof; (ii)

  • Plasma arc incinerator means any enclosed device using a high intensity electrical discharge or arc as a source of heat followed by an afterburner using controlled flame combustion and which is not listed as an industrial furnace.

  • Capture device means a hood, enclosed room, floor sweep, or other means of collecting solvent emissions or other pollutants into a duct. The pollutant can be directed to a pollution control device such as an incinerator or carbon adsorber.

  • Antenna means communications equipment that transmits or receives electromagnetic radio frequency signals used in the provision of wireless services.

  • Fiber means a glass strand or strands which is/are protected by a color coded buffer tube and which is/are used to transmit a communication signal along the glass strand in the form of pulses of light.

  • Membrane filtration means a pressure or vacuum driven separation process in which particulate matter larger than one micrometer is rejected by an engineered barrier, primarily through a size exclusion mechanism, and which has a measurable removal efficiency of a target organism that can be verified through the application of a direct integrity test. This definition includes the common membrane technologies of microfiltration, ultrafiltration, nanofiltration, and reverse osmosis.

  • Module means specific portion of the Application Software designated as such in the Documentation made available to the Customer under the Notification Form.

  • Acceptance Test is a test of the Features executed by the Customer to prepare the acceptance.

  • explosive actuated fastening device means a tool that is activated by an explosive charge and that is used for driving bolts, nails and similar objects for the purpose of providing fixing;

  • Fuel cell means an energy converter transforming chemical energy (input) into electrical energy (output) or vice versa.

  • Diameter means the diameter of the stem of a tree measured outside the bark at a specified point of measurement.

  • DNS test Means one non-­‐recursive DNS query sent to a particular “IP address” (via UDP or TCP). If DNSSEC is offered in the queried DNS zone, for a query to be considered answered, the signatures must be positively verified against a corresponding DS record published in the parent zone or, if the parent is not signed, against a statically configured Trust Anchor. The answer to the query must contain the corresponding information from the Registry System, otherwise the query will be considered unanswered. A query with a “DNS resolution RTT” 5 times higher than the corresponding SLR, will be considered unanswered. The possible results to a DNS test are: a number in milliseconds corresponding to the “DNS resolution RTT” or, undefined/unanswered.

  • Acceptance Testing mean the tests, reviews and other activities that are performed by or on behalf of Agency to determine whether the Deliverables meet the Acceptance Criteria or otherwise satisfy the Agency, as determined by the Agency in its sole discretion.

  • Beam axis means a line from the source through the centers of the x-ray fields.

  • High voltage bus means the electrical circuit, including the coupling system for charging the REESS, that operates on a high voltage.