NAND Flash Memory Products definition

NAND Flash Memory Products has the meaning given in Section 3.2 of the Master Agreement.

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NAND Flash Memory Products are NAND (both binary and MLC Flash Memory) Flash Memory Integrated Circuits (“ICs”), excluding any products with process design rules generally greater than .25 microns. Embedded IC’s incorporating NAND Flash Memory Products shall be considered to constitute “NAND Flash Memory Products” if the main function and value of such IC is flash memory, but shall not be considered to constitute “NAND Flash Memory Products” if the main function and value of such IC is logic. For the purpose of the foregoing, the “main function and value” of any product shall be considered to be flash memory if (x) the total NAND flash memory array area is greater than [***] of the total die area or (y) the product is a cut-down or derivative of a standard NAND Flash Memory Product.

NAND Flash Memory Products has the meaning set forth in the JV Agreements.

Examples of NAND Flash Memory Products in a sentence

For purposes of this Section 6.13, “NAND Flash Memory Integrated Circuits” means ICs included in the definition of NAND Flash Memory Products pursuant to Section 3.2.
Embedded IC’s incorporating NAND Flash Memory Products shall be considered to constitute “NAND Flash Memory Products” if the main function and value of such IC is flash memory, but shall not be considered to constitute “NAND Flash Memory Products” if the main function and value of such IC is logic.
Toshiba will manufacture Y4 NAND Flash Memory Products at the Y4 Facility for Flash Alliance ordered by Toshiba and SanDisk under the terms and conditions of the FA Purchase and Supply Agreements.
If the new capacity secured at such external manufacturing source is requested by only one of the Parties, such Party will pay the transfer costs and be entitled to purchase the full output of NAND Flash Memory Products purchased by FVC Japan, Flash Partners or Flash Alliance, as applicable, from such external manufacturing source.
The Parties acknowledge and agree that the purpose of the Master Operative Documents and Flash Alliance is the manufacture, including by subcontract to Toshiba pursuant to the FA Foundry Agreement, and sale to Toshiba and SanDisk Ireland of NAND Flash Memory Products manufactured at the facility of Flash Alliance known by the Parties as “Y4” (the “Y4 Facility”), which is a part of the Yokkaichi Facility (defined in Appendix A).
The Yokkaichi Facility shall be Flash Forward’s exclusive manufacturing source for output of Y5 NAND Flash Memory Products.
Toshiba will manufacture Y5 NAND Flash Memory Products at the Y5 Facility for Flash Forward ordered by Toshiba and SanDisk under the terms and conditions of the FF Purchase and Supply Agreements.
The Parties intend to meet demand for increased capacity by equally investing in, and jointly building, and sharing, on equal or substantially equal terms, equal amounts of new capacity for Y5 NAND Flash Memory Products, except as otherwise provided herein.
Where the Parties purchase the same output volume of equivalent Y4 NAND Flash Memory Products, the Parties will pay the same purchase price per unit.
The Parties intend to meet demand for increased capacity by equally investing in, and jointly building, and sharing, on equal or substantially equal terms, equal amounts of new capacity for Y4 NAND Flash Memory Products, except as they may otherwise agree as contemplated herein.

More Definitions of NAND Flash Memory Products

NAND Flash Memory Products if the main function and value of such IC is flash memory, but shall not be considered to constitute “NAND Flash Memory Products” if the main function and value of such IC is logic. For the purpose of the foregoing, the “main function and value” of any product shall be considered to be flash memory if (x) the total NAND flash memory array area is greater than [***] of the total die area or (y) the product is a cut-down or derivative of a standard NAND Flash Memory Product.

NAND Flash Memory Products has the meaning given in Section 3.2 of the Master Agreement. “Net Book Value” means, with respect to any Person, the total assets of such Person less the total liabilities of such Person, in each case as determined in accordance with Japanese GAAP or US GAAP, as applicable. “Patent Indemnification Agreement” means the Patent Indemnification Agreement dated as of the Effective Date between Toshiba and SanDisk Corporation. * Indicates that certain information contained herein has been omitted and filed separately with the Securities and Exchange Commission. Confidential treatment has been requested with respect to the omitted portions.

NAND Flash Memory Products has the meaning set forth in the JV Agreements. “New Agreements” has the meaning set forth in the Recitals. “New Y2 BiCS Products” has the meaning set forth in Section 3.1(b). “New Y2 Capacity Ratio” for either SanDisk or Toshiba means ****. **** “New Y2 Facility” means the newly constructed production facility, owned by Toshiba and forming part of the Yokkaichi Facility, including a building shell, cleanroom, and all culverts, piping, ducting and associated infrastructure connecting thereto. “New Y2 Fixed Manufacturing Costs” means the New Y2 Manufacturing Costs described on Schedule 8.4(b)(i). “New Y2 JV Engineers” has the meaning set forth in Section 7.1(a). “New Y2 JV Headcount Plan” has the meaning set forth in Section 7.2. “New Y2 Manufacturing Costs” has the meaning set forth in Section 8.1. “New Y2 MCEIA” means that certain New Y2 Mutual Contribution and Environmental Indemnification Agreement, dated as of even date herewith, by and among Toshiba, SanDisk Cayman, SanDisk Ireland and SanDisk Flash. “New Y2 Operating Committee” has the meaning set forth in Section 6.1. Exhibit A-6

NAND Flash Memory Products are K1 NAND Flash Memory Products allocated to a JV under the applicable JV’s JV Master Agreement. Allocation of monthly lot output of NAND Flash Memory Products under the JV Master Agreements is hereby amended to include the following: the actual monthly lot output of K1 NAND Flash Memory Products will be allocated between the Parent Parties in the manner set forth in this Agreement as if all of such output were BiCS Product output from the K1 Facility; provided, that during any month in which the planned production of NAND Flash Memory Products is [***] output will be allocated between the Parent Parties [***]

NAND Flash Memory Products has the meaning given in Section 3.2(a)(iii) of the Master Agreement. “Y4 Facility” means the facility at which Y4 NAND Flash Memory Products are manufactured for Flash Alliance. “Y4 NAND Flash Memory Products” has the meaning given in Section 3.2(a)(iii) of the Master Agreement. “Y5 Facility” has the meaning given in the Master Agreement. “Y5 NAND Flash Memory Products” has the meaning given in Section 3.2(a)(ii) of the Master Agreement. “Yokkaichi Facility” means Toshiba’s facilities in Yokkaichi Japan, including the FVC Japan Equipment, the Y3 Facility, the Y4 Facility, the Y5 Facility and Toshiba’s Asahi facility. Rules of Construction and Documentary Conventions 2.1